Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 844/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
DIODE GP 100V 6A MICRODE BUTTON |
3.472 |
|
- | Standard | 100V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 100V | - | Through Hole | Button, Axial | Microde Button | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GP 200V 6A MICRODE BUTTON |
6.480 |
|
- | Standard | 200V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 200V | - | Through Hole | Button, Axial | Microde Button | -65°C ~ 175°C |
|
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|
ON Semiconductor |
DIODE GP 400V 6A MICRODE BUTTON |
6.570 |
|
- | Standard | 400V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 400V | - | Through Hole | Button, Axial | Microde Button | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GP 600V 6A MICRODE BUTTON |
4.842 |
|
- | Standard | 600V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 600V | - | Through Hole | Button, Axial | Microde Button | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 10A TO220AC |
2.844 |
|
- | Standard | 300V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 300V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A TO220AC |
2.304 |
|
- | Standard | 600V | 8A | 3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 5µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A ITO220AC |
6.030 |
|
- | Standard | 600V | 8A | 3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 5µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 30A TO220AB |
6.894 |
|
TMBS® | Schottky | 100V | 30A | 910mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 100V | - | Through Hole | TO-220-3 | TO-220AB | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 30A ITO220AB |
3.636 |
|
TMBS® | Schottky | 100V | 30A | 910mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 100V | - | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -40°C ~ 150°C |
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Diodes Incorporated |
DIODE SCHOTTKY 40V 15MA SOD123 |
5.238 |
|
- | Schottky | 40V | 15mA (DC) | 900mV @ 15mA | Small Signal =< 200mA (Io), Any Speed | 1ns | 200nA @ 30V | 2.2pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -65°C ~ 125°C |
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|
WeEn Semiconductors |
DIODE GEN PURP 500V 10A D2PAK |
7.848 |
|
- | Standard | 500V | 10A | 2.9V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 200µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 500V 5A D2PAK |
3.960 |
|
- | Standard | 500V | 5A | 2.9V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 500V 8A D2PAK |
5.922 |
|
- | Standard | 500V | 8A | 2.9V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 52ns | 150µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 8A TO220AC |
5.238 |
|
- | Standard | 600V | 8A | 1.5V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 8A TO220F |
3.024 |
|
- | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 9A D2PAK |
5.094 |
|
- | Standard | 600V | 9A | 1.25V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 50µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 150°C (Max) |
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Diodes Incorporated |
DIODE SCHOTTKY 60V 15MA DO35 |
7.794 |
|
- | Schottky | 60V | 15mA (DC) | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | 1ns | 200nA @ 50V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 150V 1A STMITE |
8.964 |
|
- | Schottky | 150V | 1A | 820mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 150V | - | Surface Mount | DO-216AA | STmite | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 1.2KV 8A TO220AC |
2.520 |
|
TURBOSWITCH™ | Standard | 1200V | 8A | 2.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 100µA @ 1200V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 5A DO201AD |
2.718 |
|
- | Schottky | 50V | 5A | 650mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 1A DO213AB |
4.644 |
|
- | Schottky | 20V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | 110pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | GL41 (DO-213AB) | -55°C ~ 125°C |
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STMicroelectronics |
DIODE SCHOTTKY 15V 10MA SOD523 |
6.552 |
|
- | Schottky | 15V | 10mA (DC) | 570mV @ 10mA | Small Signal =< 200mA (Io), Any Speed | - | 230nA @ 15V | 1pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | SOD-523 | 150°C (Max) |
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STMicroelectronics |
DIODE SCHOTTKY 30V 300MA SOD323 |
4.248 |
|
- | Schottky | 30V | 300mA (DC) | 530mV @ 300mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 30V | 22pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | 150°C (Max) |
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STMicroelectronics |
DIODE SCHOTTKY 30V 3A DO201AD |
4.140 |
|
- | Schottky | 30V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 30V | - | Through Hole | DO-201AD, Axial | DO-201AD | 150°C (Max) |
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Littelfuse |
DIODE GEN PURP 800V 9.5A TO220 |
5.760 |
|
- | Standard | 800V | 9.5A | 1.6V @ 9.5A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 20µA @ 800V | - | Through Hole | TO-220-3 Isolated Tab, Formed Leads | TO-220 Isolated Tab | -40°C ~ 125°C |
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Panasonic Electronic Components |
DIODE GEN PURP 6V 100MA DO34 |
6.642 |
|
- | Standard | 6V | 100mA (DC) | 1.28V @ 3mA | Small Signal =< 200mA (Io), Any Speed | - | 1µA @ 6V | - | Through Hole | DO-204AG, DO-34, Axial | DO34-A1 | 150°C (Max) |
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Panasonic Electronic Components |
DIODE GEN PURP 50V 100MA DO34 |
8.406 |
|
- | Standard | 50V | 100mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 50V | 2pF @ 0V, 1MHz | Through Hole | DO-204AG, DO-34, Axial | DO34-A1 | 200°C (Max) |
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Panasonic Electronic Components |
DIODE GEN PURP 75V 100MA DO34 |
2.916 |
|
- | Standard | 75V | 100mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 2pF @ 0V, 1MHz | Through Hole | DO-204AG, DO-34, Axial | DO34-A1 | 200°C (Max) |
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Panasonic Electronic Components |
DIODE GEN PURP 40V 200MA DO34 |
4.500 |
|
- | Standard | 40V | 200mA | 1.1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 35V | 4pF @ 0V, 1MHz | Through Hole | DO-204AG, DO-34, Axial | DO34-A1 | 200°C (Max) |
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Panasonic Electronic Components |
DIODE GEN PURP 80V 200MA DO34 |
7.812 |
|
- | Standard | 80V | 200mA | 1.1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AG, DO-34, Axial | DO34-A1 | 200°C (Max) |