Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 646/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 50V 15A DO5 |
5.112 |
|
- | Standard, Reverse Polarity | 50V | 15A | 1.5V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 100V 15A DO5 |
2.916 |
|
- | Standard | 100V | 15A | 1.5V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 100V 15A DO5 |
6.120 |
|
- | Standard, Reverse Polarity | 100V | 15A | 1.5V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 200V 15A DO5 |
2.376 |
|
- | Standard, Reverse Polarity | 200V | 15A | 1.5V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 300V 15A DO5 |
8.604 |
|
- | Standard | 300V | 15A | 1.5V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 300V 15A DO5 |
7.668 |
|
- | Standard, Reverse Polarity | 300V | 15A | 1.5V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 400V 15A DO5 |
4.500 |
|
- | Standard | 400V | 15A | 1.5V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 400V 15A DO5 |
2.898 |
|
- | Standard, Reverse Polarity | 400V | 15A | 1.5V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 500V 15A DO5 |
6.786 |
|
- | Standard | 500V | 15A | 1.5V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 500V 15A DO5 |
3.348 |
|
- | Standard, Reverse Polarity | 500V | 15A | 1.5V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 40A DO203AB |
3.492 |
|
- | Standard, Reverse Polarity | 600V | 40A | 1.3V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 600V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 190°C |
|
|
|
Microsemi |
DIODE GEN PURP 100V 2.5A AXIAL |
5.058 |
|
Military, MIL-PRF-19500/477 | Standard | 100V | 2.5A | 975mV @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 150V 2.5A AXIAL |
1.382 |
|
Military, MIL-PRF-19500/477 | Standard | 150V | 2.5A | 975mV @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO247-3 |
8.730 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 800V 1A AXIAL |
6.012 |
|
Military, MIL-PRF-19500/429 | Standard | 800V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 800V | 20pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 1A AXIAL |
6.246 |
|
Military, MIL-PRF-19500/427 | Standard | 1000V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 1000V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 100A WAFER |
3.816 |
|
- | Standard | 1200V | 100A | 2.05V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 18µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 5A AXIAL |
10.175 |
|
Military, MIL-PRF-19500/420 | Standard | 400V | 5A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 400V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
7.758 |
|
Military, MIL-PRF-19500/359 | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 40A DO203AB |
5.670 |
|
- | Standard, Reverse Polarity | 400V | 40A | 1.95V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 400V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 125°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE FAST 200V 60A DO203AB |
7.434 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE GEN PURPOSE |
6.264 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE GEN PURP 200V 5A AXIAL |
4.482 |
|
Military, MIL-PRF-19500/420 | Standard | 200V | 5A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 200V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURPOSE |
7.416 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
IXYS |
DIODE AVALANCHE 1.2KV 11A DO203 |
2.412 |
|
- | Avalanche | 1200V | 11A | 1.4V @ 36A | Standard Recovery >500ns, > 200mA (Io) | - | 3mA @ 1200V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -40°C ~ 180°C |
|
|
|
Microsemi |
DIODE GEN PURP 220V 1.2A AXIAL |
6.066 |
|
- | Standard | 220V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 220V | 10pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 40A DO203AB |
7.578 |
|
- | Standard | 600V | 40A | 1.95V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 100µA @ 600V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 125°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 40A DO203AB |
2.034 |
|
- | Standard, Reverse Polarity | 600V | 40A | 1.95V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 100µA @ 600V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 125°C |
|
|
|
Microsemi |
DIODE GEN PURP 150V 300MA B-MELF |
6.012 |
|
Military, MIL-PRF-19500/578 | Standard | 150V | 300mA | 1.1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 150V | 2.5pF @ 0V, 1MHz | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 150V 300MA D-MELF |
5.400 |
|
Military, MIL-PRF-19500/578 | Standard | 150V | 300mA | 1.1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 150V | 2.5pF @ 0V, 1MHz | Surface Mount | DO-213AB, MELF | B, SQ-MELF | -65°C ~ 175°C |