Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 562/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCH 1KV 1.6A TO277A |
8.118 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 1000V | 1.6A | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 800V | 34pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.6A TO277A |
8.604 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 200V | 1.6A | 1.9V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 200V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.6A TO277A |
6.984 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 200V | 1.6A | 1.9V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 200V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.6A TO277A |
7.128 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 400V | 1.6A | 1.9V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.6A TO277A |
7.902 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 400V | 1.6A | 1.9V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.6A TO277A |
2.772 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 600V | 1.6A | 1.9V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.6A TO277A |
5.076 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 600V | 1.6A | 1.9V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.3A TO277A |
5.868 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 800V | 1.3A | 2.5V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 29pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.3A TO277A |
3.114 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 800V | 1.3A | 2.5V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 29pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCH 1KV 1.3A TO277A |
6.156 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 1000V | 1.3A | 2.5V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 29pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCH 1KV 1.3A TO277A |
5.148 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 1000V | 1.3A | 2.5V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 29pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
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|
Nexperia |
DIODE SCHOTTKY 45V 15A CFP15 |
5.112 |
|
Automotive, AEC-Q101 | Schottky | 45V | 15A | 550mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 100µA @ 45V | 800pF @ 10V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | CFP15 | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 8A DPAK |
3.258 |
|
- | Standard | 1000V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1000V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 8A DPAK |
7.812 |
|
- | Standard | 1000V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1000V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 8A DPAK |
4.086 |
|
- | Standard | 1000V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1000V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 8A DPAK |
6.318 |
|
- | Standard | 1000V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1000V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 150V 15A TO277A |
7.452 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 150V | 15A | 1.08V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 150V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 150V 15A TO277A |
3.672 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 150V | 15A | 1.08V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 150V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 6.4A TO277A |
5.634 |
|
eSMP®, TMBS® | Schottky | 60V | 6.4A | 590mV @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 6mA @ 60V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A DPAK |
7.236 |
|
FRED Pt® | Standard | 600V | 8A | 2.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A DPAK |
4.464 |
|
FRED Pt® | Standard | 600V | 8A | 2.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A D-PAK |
6.174 |
|
FRED Pt® | Standard | 600V | 8A | 2.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A D-PAK |
3.580 |
|
FRED Pt® | Standard | 600V | 8A | 2.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A D-PAK |
8.352 |
|
FRED Pt® | Standard | 600V | 8A | 2.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A D-PAK |
3.294 |
|
FRED Pt® | Standard | 600V | 8A | 2.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A D-PAK |
5.292 |
|
FRED Pt® | Standard | 600V | 8A | 3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 17ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A D-PAK |
6.264 |
|
- | Standard | 600V | 8A | 3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 17ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1000V 25A P2500 |
2.754 |
|
- | Standard | - | 25A | 870mV @ 5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | - | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 45V 20A 5DFN |
6.102 |
|
- | Schottky | 45V | 20A | 640mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 45V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 8A TO263AB |
6.732 |
|
- | Schottky | 100V | 8A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |