Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 559/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SMC Diode Solutions |
DIODE GEN PURP 400V 20A D2PAK |
4.356 |
|
- | Standard | 400V | 20A | 1.51V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 15µA @ 400V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 150°C |
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|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 15A TO277A |
6.678 |
|
eSMP®, TMBS® | Schottky | 50V | 15A | 560mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 50V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 80V 20A SMPC4.0 |
4.464 |
|
- | Schottky | 80V | 20A | 640mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 80V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 8A TO220AB |
3.006 |
|
- | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 50pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 8A TO220AC |
8.064 |
|
- | Schottky | 150V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 125°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 10A TO262AA |
6.516 |
|
- | Schottky | 60V | 10A | 900mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700µA @ 60V | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262AA | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
RECTIFIER BARRIER SCHOTTKY FP5X6 |
2.322 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 15A TO277A |
2.196 |
|
eSMP® | Schottky | 30V | 15A | 570mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | 200°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 7.5A 60V TO-262AA |
7.938 |
|
Automotive, AEC-Q101 | Schottky | 60V | 7.5A | 800mV @ 7.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700µA @ 60V | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262AA | -55°C ~ 150°C |
|
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|
SMC Diode Solutions |
PIV 100V IO 3A CHIP SIZE 66MIL S |
3.798 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 4A SOD64 |
8.802 |
|
- | Avalanche | 100V | 4A | 1.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 300V 3A SOD64 |
3.454 |
|
- | Avalanche | 300V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 1µA @ 300V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 4A SOD64 |
5.130 |
|
- | Avalanche | 100V | 4A | 1.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 300V 3A SOD64 |
7.578 |
|
- | Avalanche | 300V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 1µA @ 300V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 3A SOD64 |
6.606 |
|
- | Standard | 300V | 3A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 3A SOD64 |
5.688 |
|
- | Standard | 300V | 3A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 10A 80V ITO-220AB |
3.042 |
|
TMBS® | Schottky | 80V | 10A | 810mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 80V | - | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 15A 45V TO-277A |
6.768 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 45V | 4.8A (DC) | 580mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 45V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 15A 45V TO-277A |
3.906 |
|
eSMP®, TMBS® | Schottky | 45V | 4.8A (DC) | 400mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 45V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 10A 45V DPAK |
2.808 |
|
- | Schottky | 45V | 10A | 630mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | 760pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 10A 45V DPAK |
5.004 |
|
- | Schottky | 45V | 10A | 630mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | 760pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A DPAK |
8.784 |
|
- | Schottky | 45V | 10A | 630mV @ 10A | Small Signal =< 200mA (Io), Any Speed | - | 1mA @ 45V | 760pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 175°C |
|
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|
Diodes Incorporated |
DIODE GEN PURP 75V 150MA SOT323 |
5.670 |
|
- | Standard | 75V | 150mA | 1.25V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 1µA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | SC-70, SOT-323 | SOT-323 | -65°C ~ 150°C |
|
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|
Nexperia |
DIODE GEN PURP 200V 3A CFP5 |
5.976 |
|
- | Standard | 200V | 3A | 980mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 200nA @ 200V | 27pF @ 4V, 1MHz | Surface Mount | SOD-128 | CFP5 | 150°C (Max) |
|
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|
Diodes Incorporated |
DIODE GEN PURP 800V 10A R6 |
7.686 |
|
- | Standard | 800V | 10A | 1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | 80pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -65°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A DO214AA |
8.820 |
|
Automotive, AEC-Q101 | Standard | 200V | 2A | 900mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 200V | 18pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
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Central Semiconductor Corp |
DIODE SCHOTTKY 40V 2A SMB |
7.794 |
|
- | Schottky | 40V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 101pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 120V 15A TO220AB |
3.096 |
|
- | Schottky | 120V | 15A | 880mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 120V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 150V 4A SOD64 |
8.892 |
|
- | Avalanche | 150V | 4A | 1.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 3A SOD64 |
5.328 |
|
- | Avalanche | 400V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 1µA @ 400V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |