Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 554/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.7A TO277A |
8.172 |
|
eSMP® | Avalanche | 600V | 1.7A (DC) | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 72pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.7A TO277A |
3.726 |
|
eSMP® | Avalanche | 200V | 1.7A (DC) | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 200V | 72pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.7A TO277A |
6.246 |
|
eSMP® | Avalanche | 400V | 1.7A (DC) | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | 72pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.7A TO277A |
6.534 |
|
eSMP® | Avalanche | 600V | 1.7A (DC) | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 72pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
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|
Microsemi |
DIODE SCHOTTKY 20V 1A POWERMITE |
5.220 |
|
- | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | 105pF @ 5V, 1MHz | Surface Mount | DO-216AA | Powermite | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 3A SOD64 |
7.236 |
|
- | Avalanche | 800V | 3A | 1.4V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 800V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 3A SOD64 |
4.626 |
|
- | Avalanche | 400V | 3A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 400V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 3A SOD64 |
3.582 |
|
- | Avalanche | 600V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 7.5µs | 1µA @ 600V | 60pF @ 4V, 1MHz | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 1.5A SOD64 |
3.150 |
|
- | Avalanche | 1000V | 1.5A | 1.78V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 1000V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 3A SOD64 |
2.358 |
|
- | Avalanche | 800V | 3A | 1.4V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 800V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 3A SOD64 |
4.572 |
|
- | Avalanche | 400V | 3A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 400V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 3A SOD64 |
7.974 |
|
- | Avalanche | 600V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 7.5µs | 1µA @ 600V | 60pF @ 4V, 1MHz | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 3A SOD64 |
8.388 |
|
- | Standard | 50V | 3A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 3A SOD64 |
8.676 |
|
- | Standard | 50V | 3A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 7.5A 60V TO-220AC |
8.442 |
|
TMBS® | Schottky | 60V | 7.5A | 800mV @ 7.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700µA @ 60V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3.2A TO263AC |
6.066 |
|
Automotive, AEC-Q101, eSMP® | Standard | 100V | 3.2A | 1.15V @ 12A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 20µA @ 100V | 90pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | TO-263AC (SMPD) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3.2A TO263AC |
2.394 |
|
Automotive, AEC-Q101, eSMP® | Standard | 200V | 3.2A | 1.15V @ 12A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 20µA @ 200V | 90pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | TO-263AC (SMPD) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3.2A TO263AC |
5.112 |
|
Automotive, AEC-Q101, eSMP® | Standard | 400V | 3.2A | 1.15V @ 12A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 20µA @ 400V | 90pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | TO-263AC (SMPD) | -55°C ~ 175°C |
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Diodes Incorporated |
DIODE SBR 60V 10A TO252 |
5.778 |
|
Automotive, AEC-Q101, SBR® | Super Barrier | 60V | 10A | 520mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 60V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 3A DO201AD |
8.316 |
|
SUPERECTIFIER® | Standard | 50V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 3A DO201AD |
2.100 |
|
SUPERECTIFIER® | Standard | 50V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO201AD |
3.024 |
|
SUPERECTIFIER® | Standard | 100V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 1µA @ 100V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO201AD |
2.826 |
|
SUPERECTIFIER® | Standard | 100V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 1µA @ 100V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 3A DO201AD |
7.740 |
|
SUPERECTIFIER® | Standard | 150V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 1µA @ 150V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 3A DO201AD |
6.498 |
|
SUPERECTIFIER® | Standard | 150V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 1µA @ 150V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO201AD |
6.390 |
|
SUPERECTIFIER® | Standard | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 2µA @ 200V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO201AD |
3.562 |
|
SUPERECTIFIER® | Standard | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 2µA @ 200V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 3A DO201AD |
2.808 |
|
SUPERECTIFIER® | Standard | 300V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 3µA @ 300V | 48pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 3A DO201AD |
6.444 |
|
SUPERECTIFIER® | Standard | 300V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 3µA @ 300V | 48pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO201AD |
7.758 |
|
SUPERECTIFIER® | Standard | 400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 4µA @ 400V | 48pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |