Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 551/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 8A TO220AC |
3.276 |
|
- | Standard | 400V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 60pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 3A SOD64 |
5.472 |
|
- | Avalanche | 200V | 3A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 200V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 3A SOD64 |
7.254 |
|
- | Avalanche | 400V | 3A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 400V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 3A SOD64 |
7.596 |
|
- | Avalanche | 200V | 3A | 1.4V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 200V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 3A SOD64 |
8.370 |
|
- | Avalanche | 200V | 3A | 1.4V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 200V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 300V 3A DPAK |
2.628 |
|
SWITCHMODE™ | Standard | 300V | 3A (DC) | 1.15V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 12A DO201AD |
4.536 |
|
- | Schottky | 30V | 12A | 550mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 12A DO201AD |
3.906 |
|
- | Schottky | 40V | 12A | 550mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 12A DO201AD |
7.326 |
|
- | Schottky | 20V | 12A | 550mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 150°C |
|
|
|
Comchip Technology |
DIODE SCHOTTKY 200V 10A TO220-3 |
3.456 |
|
- | Schottky | 200V | 10A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 200V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE GEN PURP 200V 6A R6 |
8.694 |
|
- | Standard | 200V | 6A | 1.2V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 200V | 140pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -65°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 400V 6A R-6 |
6.138 |
|
- | Standard | 400V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | 100pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -50°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 8A D-PAK |
2.682 |
|
FRED Pt® | Standard | 200V | 8A | 970mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 24ns | 5µA @ 200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 8A D-PAK |
4.734 |
|
FRED Pt® | Standard | 200V | 8A | 970mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 24ns | 5µA @ 200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 8A D-PAK |
5.292 |
|
FRED Pt® | Standard | 200V | 8A | 970mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 24ns | 5µA @ 200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 10A TO220AB |
4.608 |
|
- | Standard | 600V | 10A | 1.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 50pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
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Diodes Incorporated |
DIODE SBR 100V 5A POWERDI5 |
6.696 |
|
Automotive, AEC-Q101 | Super Barrier | 100V | 15A | 700mV @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 200µA @ 100V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
RECTIFIER BARRIER SCHOTTKY FP5X6 |
7.128 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 5A 200V TO-263AB |
6.948 |
|
- | Schottky | 200V | 5A | 1.6V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -40°C ~ 150°C |
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SMC Diode Solutions |
PIV 200V IO 3A CHIP SIZE 60MIL S |
3.870 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
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|
Diodes Incorporated |
DIODE SBR 60V 20A POWERDI5 |
3.006 |
|
Automotive, AEC-Q101 | Super Barrier | 60V | 20A | 570mV @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 180µA @ 60V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
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Diodes Incorporated |
DIODE SBR 60V 20A POWRDI5 |
2.448 |
|
Automotive, AEC-Q101 | Super Barrier | 60V | 20A | 530mV @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 400µA @ 60V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SBR 60V 20A POWERDI5 |
4.122 |
|
Automotive, AEC-Q101 | Super Barrier | 60V | 20A | 530mV @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 400µA @ 60V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 8A DPAK |
6.696 |
|
ECOPACK® | Standard | 600V | 8A | 3.4V @ 8A | Small Signal =< 200mA (Io), Any Speed | 18ns | 20µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 175°C (Max) |
|
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|
ON Semiconductor |
DIODE SCHOTTKY 50V 10A TO220AC |
3.348 |
|
- | Schottky | 50V | 10A | 800mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 50V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 2A TO277A |
3.600 |
|
eSMP® | Avalanche | 200V | 2A (DC) | 1.6V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 200V | 77pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 2A TO277A |
3.654 |
|
eSMP® | Avalanche | 400V | 2A (DC) | 1.6V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 400V | 77pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 2A TO277A |
3.600 |
|
eSMP® | Avalanche | 600V | 2A (DC) | 1.6V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 600V | 77pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 2A TO277A |
7.920 |
|
eSMP® | Avalanche | 600V | 2A (DC) | 1.6V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 600V | 77pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 2A TO277A |
3.472 |
|
eSMP® | Avalanche | 400V | 2A (DC) | 1.6V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 400V | 77pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |