Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 486/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Sanken |
DIODE GEN PURP 600V 1A AXIAL |
7.110 |
|
- | Standard | 600V | 1A | 1.4V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 200V 1A AXIAL |
4.230 |
|
- | Standard | 200V | 1A | 1.4V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 200V 1A AXIAL |
5.382 |
|
- | Standard | 200V | 1A | 1.4V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 200V 1A AXIAL |
6.228 |
|
- | Standard | 200V | 1A | 1.4V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 200V 250MA AXIAL |
6.678 |
|
- | Standard | 200V | 250mA | 2.5V @ 250mA | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 200V 250MA AXIAL |
7.560 |
|
- | Standard | 200V | 250mA | 2.5V @ 250mA | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 200V 250MA AXIAL |
2.988 |
|
- | Standard | 200V | 250mA | 2.5V @ 250mA | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 200V 250MA AXIAL |
2.916 |
|
- | Standard | 200V | 250mA | 2.5V @ 250mA | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 600V 1A AXIAL |
2.664 |
|
- | Standard | 600V | 1A | 1.4V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 600V 1A AXIAL |
4.968 |
|
- | Standard | 600V | 1A | 1.4V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 600V 1A AXIAL |
3.474 |
|
- | Standard | 600V | 1A | 1.4V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 200V 1A AXIAL |
5.310 |
|
- | Standard | 200V | 1A | 1.4V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 200V 1A AXIAL |
7.830 |
|
- | Standard | 200V | 1A | 1.4V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 200V 1A AXIAL |
6.264 |
|
- | Standard | 200V | 1A | 1.4V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 200V 1A AXIAL |
5.796 |
|
- | Standard | 200V | 1A | 1.4V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Bourns |
DIODE GEN PURPOSE 100V 3A SMC |
4.374 |
|
- | Standard | 100V | 3A | 920mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 2A SOD57 |
3.420 |
|
- | Avalanche | 600V | 2A | 1.15V @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 4µs | 1µA @ 600V | 40pF @ 0V, 1MHz | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 2A SOD57 |
3.834 |
|
- | Avalanche | 200V | 2A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 200V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 2A SOD57 |
3.420 |
|
- | Avalanche | 200V | 2A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 200V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 150V 8A DO221BC |
4.392 |
|
eSMP®, TMBS® | Schottky | 150V | 8A | 1.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 150V | 510pF @ 4V, 1MHz | Surface Mount | DO-221BC, SMA Flat Leads Exposed Pad | DO-221BC (SMPA) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 8A DO221BC |
3.186 |
|
eSMP®, TMBS® | Schottky | 60V | 8A | 630mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 60V | 1030pF @ 4V, 1MHz | Surface Mount | DO-221BC, SMA Flat Leads Exposed Pad | DO-221BC (SMPA) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 8A DO221BC |
3.726 |
|
eSMP®, TMBS® | Schottky | 100V | 8A | 780mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 100V | 810pF @ 4V, 1MHz | Surface Mount | DO-221BC, SMA Flat Leads Exposed Pad | DO-221BC (SMPA) | -40°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 120V 8A DO221BC |
5.634 |
|
eSMP®, TMBS® | Schottky | 120V | 8A | 880mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 120V | 730pF @ 4V, 1MHz | Surface Mount | DO-221BC, SMA Flat Leads Exposed Pad | DO-221BC (SMPA) | -40°C ~ 175°C |
|
|
|
Bourns |
DIO SBD VRRM 20V 3A SMA |
7.002 |
|
- | Schottky | 20V | 3A | 420mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | 120pF @ 4V, 1MHz | Surface Mount | 2-SMD, No Lead | 2-SMD | -55°C ~ 125°C |
|
|
|
Bourns |
DIO SBD VRRM 40V 3A SMA |
5.238 |
|
- | Schottky | 40V | 3A | 420mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 120pF @ 4V, 1MHz | Surface Mount | 2-SMD, No Lead | 2-SMD | -55°C ~ 125°C |
|
|
|
Bourns |
DIO SBD VRRM 20V 3A SMB |
4.104 |
|
- | Schottky | 20V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | 180pF @ 4V, 1MHz | Surface Mount | 2-SMD, No Lead | 2-SMD | -55°C ~ 125°C |
|
|
|
Bourns |
DIO RECT VRRM 800V 3A SMB |
8.982 |
|
- | Standard | 800V | 3A | 2.2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 800V | 19pF @ 4V, 1MHz | Surface Mount | 2-SMD, No Lead | 2-SMD | -65°C ~ 175°C |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 30V 5A SMC |
3.168 |
|
- | Schottky | 30V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | 340pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1A DO220AA |
6.966 |
|
eSMP® | Avalanche | 200V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 1µA @ 200V | 12.5pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1A DO220AA |
2.376 |
|
eSMP® | Avalanche | 400V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 1µA @ 400V | 12.5pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |