Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 451/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 1A DO214AC |
5.148 |
|
- | Standard | 150V | 1A | 900mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 200V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A DO214AC |
4.284 |
|
- | Standard | 200V | 1A | 900mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 200V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 175°C |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 90V 3A SMB |
4.968 |
|
- | Schottky | 90V | 3A | 790mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 90V | 105pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 3A DO214AB |
2.268 |
|
- | Standard | 50V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 3A DO214AB |
6.372 |
|
- | Standard | 100V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 3A DO214AB |
6.588 |
|
- | Standard | 150V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO214AB |
4.266 |
|
- | Standard | 200V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 200V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 3A DO214AB |
4.680 |
|
- | Standard | 100V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 5µA @ 100V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 3A DO214AB |
6.354 |
|
- | Standard | 150V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 5µA @ 150V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO214AB |
7.236 |
|
- | Standard | 200V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 5µA @ 200V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 5A DO221AC |
8.280 |
|
TMBS®, SlimSMA™ | Schottky | 60V | 5A (DC) | 470mV @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 60V | 540pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 3A DO214AC |
3.418 |
|
- | Schottky | 40V | 3A | 550mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 20V 2A 2DSN |
3.474 |
|
Automotive, AEC-Q101 | Schottky | 20V | 2A (DC) | 600mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 28ns | 80µA @ 20V | 75pF @ 2V, 1MHz | Surface Mount | 2-XDFN | 2-DSN (1x.60) | 150°C (Max) |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 3A DO214AB |
7.866 |
|
- | Standard | 50V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 50V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 3A DO214AB |
8.352 |
|
- | Standard | 100V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 3A DO214AB |
2.214 |
|
- | Standard | 150V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 150V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO214AB |
4.428 |
|
- | Standard | 200V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 8A DO214AB |
3.400 |
|
- | Standard | 400V | 8A | - | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | 48pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 8A DO214AB |
4.464 |
|
- | Standard | 600V | 8A | - | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | 48pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 8A DO214AB |
8.262 |
|
- | Standard | 800V | 8A | - | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | 48pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 8A DO214AB |
4.986 |
|
- | Standard | - | 8A | - | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | 48pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 800V 500MA S-FLAT |
4.338 |
|
- | Standard | 800V | 500mA | 3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 50µA @ 800V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1.5A US-FLAT |
7.326 |
|
- | Schottky | 30V | 1.5A | 460mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60µA @ 30V | 50pF @ 10V, 1MHz | Surface Mount | SC-76, SOD-323 | US-FLAT (1.25x2.5) | 150°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 500MA DO213 |
4.104 |
|
SUPERECTIFIER® | Standard | 100V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 4pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 500MA DO213 |
7.848 |
|
SUPERECTIFIER® | Standard | 600V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 4pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 500MA DO213AA |
3.598 |
|
SUPERECTIFIER® | Standard | 50V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | 4pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 500MA DO213 |
5.796 |
|
SUPERECTIFIER® | Standard | 100V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 4pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 500MA DO213 |
3.726 |
|
SUPERECTIFIER® | Standard | 200V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 4pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 500MA DO213 |
5.058 |
|
SUPERECTIFIER® | Standard | 400V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | 4pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 500MA DO213 |
6.372 |
|
SUPERECTIFIER® | Standard | 600V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 4pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |