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Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 1105/1165
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
1N5392G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1.5A DO204AC
6.534
-
Standard
100V
1.5A
1.1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 100V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5392GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1.5A DO204AC
4.356
Automotive, AEC-Q101
Standard
100V
1.5A
1.1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 100V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5393G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1.5A DO204AC
3.598
-
Standard
200V
1.5A
1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5393GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1.5A DO204AC
7.920
Automotive, AEC-Q101
Standard
200V
1.5A
1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5395G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1.5A DO204AC
8.568
-
Standard
400V
1.5A
1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5395GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1.5A DO204AC
3.672
Automotive, AEC-Q101
Standard
400V
1.5A
1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5397G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1.5A DO204AC
5.184
-
Standard
600V
1.5A
1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5397GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1.5A DO204AC
2.538
Automotive, AEC-Q101
Standard
600V
1.5A
1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5398G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1.5A DO204AC
6.624
-
Standard
800V
1.5A
1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5398GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1.5A DO204AC
5.418
Automotive, AEC-Q101
Standard
800V
1.5A
1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5399G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1.5A DO204AC
6.822
-
Standard
-
1.5A
1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5399GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1.5A DO204AC
4.248
Automotive, AEC-Q101
Standard
-
1.5A
1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5400G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO201AD
2.700
-
Standard
50V
3A
1.1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 50V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5400GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO201AD
4.230
Automotive, AEC-Q101
Standard
50V
3A
1.1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 50V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5401G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO201AD
3.960
-
Standard
100V
3A
1.1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 100V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5401GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO201AD
3.454
Automotive, AEC-Q101
Standard
100V
3A
1.1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 100V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5402G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO201AD
5.886
-
Standard
200V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5402GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO201AD
8.172
Automotive, AEC-Q101
Standard
200V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5404G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO201AD
3.580
-
Standard
400V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5404GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO201AD
4.338
Automotive, AEC-Q101
Standard
400V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5406G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
7.776
-
Standard
600V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5406GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
3.564
Automotive, AEC-Q101
Standard
600V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5407G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 3A DO201AD
6.732
-
Standard
800V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5407GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 3A DO201AD
8.280
Automotive, AEC-Q101
Standard
800V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5408G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO201AD
6.066
-
Standard
-
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5408GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO201AD
4.626
Automotive, AEC-Q101
Standard
-
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5817 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 1A DO204AL
5.292
-
Schottky
20V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
55pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
1N5817HB0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 1A DO204AL
8.928
Automotive, AEC-Q101
Schottky
20V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
55pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
1N5818 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A DO204AL
7.020
-
Schottky
30V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
55pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
1N5818HB0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A DO204AL
2.772
Automotive, AEC-Q101
Schottky
30V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
55pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C