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Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 1104/1165
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
UG5JHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 5A TO220AC
6.624
Automotive, AEC-Q101
Standard
600V
5A
3V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
30µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
UG8JHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 8A TO220AC
4.608
Automotive, AEC-Q101
Standard
600V
8A
2.9V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
30µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
UGF12J C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 12A ITO220AC
8.208
-
Standard
600V
12A
2V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
5µA @ 600V
-
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
UGF5JHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 5A ITO220AC
5.148
Automotive, AEC-Q101
Standard
600V
5A
3V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
30µA @ 600V
-
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
UGF8JDHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 8A ITO220AC
4.626
Automotive, AEC-Q101
Standard
600V
8A
2.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
500nA @ 600V
-
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
1N4001G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
7.578
-
Standard
50V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 50V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4001GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
7.614
Automotive, AEC-Q101
Standard
50V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 50V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4002G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
6.462
-
Standard
100V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 100V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4002GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
4.644
Automotive, AEC-Q101
Standard
100V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 100V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4003G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO204AL
4.140
-
Standard
200V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4003GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO204AL
8.298
Automotive, AEC-Q101
Standard
200V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4004G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
3.060
-
Standard
400V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4004GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
8.658
Automotive, AEC-Q101
Standard
400V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4005GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
3.114
Automotive, AEC-Q101
Standard
600V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4006G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO204AL
4.698
-
Standard
800V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4006GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO204AL
3.240
Automotive, AEC-Q101
Standard
800V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4007G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
8.442
-
Standard
1000V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4007GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
6.354
Automotive, AEC-Q101
Standard
1000V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4933G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
2.466
-
Standard
50V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 50V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4933GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
5.760
Automotive, AEC-Q101
Standard
50V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 50V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4934G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
6.966
-
Standard
100V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 100V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4934GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
7.380
Automotive, AEC-Q101
Standard
100V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 100V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4935G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO204AL
5.706
-
Standard
200V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 200V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4935GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO204AL
2.988
Automotive, AEC-Q101
Standard
200V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 200V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4936G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
2.100
-
Standard
400V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 400V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4936GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
2.106
Automotive, AEC-Q101
Standard
400V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 400V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4937G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
8.514
-
Standard
600V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 600V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4937GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
8.856
Automotive, AEC-Q101
Standard
600V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 600V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N5391G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1.5A DO204AC
3.924
-
Standard
50V
1.5A
1.1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 50V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5391GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1.5A DO204AC
3.222
Automotive, AEC-Q101
Standard
50V
1.5A
1.1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 50V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C