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Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 1083/1165
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
F1T6GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A TS-1
5.202
Automotive, AEC-Q101
Standard
800V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
15pF @ 4V, 1MHz
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
F1T7GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A TS-1
4.122
Automotive, AEC-Q101
Standard
-
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
15pF @ 4V, 1MHz
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
FR151G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1.5A DO204AC
4.626
-
Standard
50V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR151GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1.5A DO204AC
4.104
Automotive, AEC-Q101
Standard
50V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR152G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1.5A DO204AC
7.650
-
Standard
100V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR152GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1.5A DO204AC
5.940
Automotive, AEC-Q101
Standard
100V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR153G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1.5A DO204AC
7.254
-
Standard
200V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR153GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1.5A DO204AC
2.664
Automotive, AEC-Q101
Standard
200V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR154GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1.5A DO204AC
2.394
Automotive, AEC-Q101
Standard
400V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR155GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1.5A DO204AC
7.434
Automotive, AEC-Q101
Standard
600V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR156G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1.5A DO204AC
6.750
-
Standard
800V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR156GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1.5A DO204AC
4.320
Automotive, AEC-Q101
Standard
800V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR157GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1.5A DO204AC
7.704
Automotive, AEC-Q101
Standard
-
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR201G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 2A DO204AC
6.624
-
Standard
50V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
10pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR202G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 2A DO204AC
3.042
-
Standard
100V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
10pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR203G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO204AC
3.384
-
Standard
200V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
10pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR206G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 2A DO204AC
3.060
-
Standard
800V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
10pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR301G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO201AD
2.862
-
Standard
50V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
FR302G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO201AD
5.562
-
Standard
100V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
FR303G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO201AD
6.174
-
Standard
200V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
FR305G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
7.398
-
Standard
600V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
FR306G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 3A DO201AD
4.122
-
Standard
800V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
HER151G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1.5A DO204AC
5.922
-
Standard
50V
1.5A
1V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
HER152G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1.5A DO204AC
5.472
-
Standard
100V
1.5A
1V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
HER153G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1.5A DO204AC
6.174
-
Standard
200V
1.5A
1V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
HER154G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 1.5A DO204AC
7.236
-
Standard
300V
1.5A
1V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 300V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
HER155G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1.5A DO204AC
3.852
-
Standard
400V
1.5A
1V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
HER157G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1.5A DO204AC
4.914
-
Standard
800V
1.5A
1V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 800V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
HER201G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 2A DO204AC
6.912
-
Standard
50V
2A
1V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
HER202G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 2A DO204AC
3.672
-
Standard
100V
2A
1V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C