Raddrizzatori - Singoli

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Tipo di diodo

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Tensione - Inversione CC (Vr) (Max)

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Corrente - Media Rettificata (Io)

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Tensione - Avanti (Vf) (Max) @ If

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Velocità

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Tempo di recupero inverso (trr)

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Corrente - Perdita inversa @ Vr

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Capacità @ Vr, F

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Tipo di montaggio

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Pacchetto / Custodia

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli

Record 34.936

Pagina 1080/1165

Numero parte	Produttore	Descrizione	Disponibile	Serie	Tipo di diodo	Tensione - Inversione CC (Vr) (Max)	Corrente - Media Rettificata (Io)	Tensione - Avanti (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / Custodia	Pacchetto dispositivo fornitore	Temperatura di esercizio - Giunzione
UF1MHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	3.060	Automotive, AEC-Q101	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4001 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	2.736	-	Standard	50V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4001HA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	7.812	Automotive, AEC-Q101	Standard	50V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4002HA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	7.866	Automotive, AEC-Q101	Standard	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4003HA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	6.678	Automotive, AEC-Q101	Standard	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4004HA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	8.496	Automotive, AEC-Q101	Standard	400V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4005 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	7.830	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4005HA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	8.316	Automotive, AEC-Q101	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4006HA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO204AL	7.542	Automotive, AEC-Q101	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4007HA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	5.256	Automotive, AEC-Q101	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1T1G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1	4.428	-	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T2G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	2.322	-	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T3G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A TS-1	6.984	-	Standard	200V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T4G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	2.430	-	Standard	400V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T5G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	7.128	-	Standard	600V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T6G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A TS-1	5.778	-	Standard	800V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T1G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1	3.924	-	Standard	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T1GHA1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1	3.870	Automotive, AEC-Q101	Standard	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T2G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	2.808	-	Standard	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T2GHA1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	3.042	Automotive, AEC-Q101	Standard	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T3G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A TS-1	3.312	-	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T3GHA1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A TS-1	6.012	Automotive, AEC-Q101	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T4GHA1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	6.048	Automotive, AEC-Q101	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T5G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	2.034	-	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T5GHA1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	2.574	Automotive, AEC-Q101	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T6G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A TS-1	2.196	-	Standard	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T6GHA1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A TS-1	4.212	Automotive, AEC-Q101	Standard	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T7G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A TS-1	7.218	-	Standard	-	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T7GHA1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A TS-1	8.820	Automotive, AEC-Q101	Standard	-	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SRT110 A1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A TS-1	6.210	-	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C

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