Raddrizzatori a ponte
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori a ponte
Record 5.469
Pagina 17/183
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tecnologia | Tensione - Picco inverso (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Corrente - Perdita inversa @ Vr | Temperatura di esercizio | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1PHASE 1KV 1A DFS |
8.905 |
|
- | Single Phase | Standard | 1kV | 1A | 1.1V @ 1A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, Gull Wing | DFS |
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 800V 3A D3K |
134 |
|
- | Single Phase | Standard | 800V | 3A | 1V @ 2A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP | D3K |
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1PHASE 200V 1A DFM |
31.488 |
|
- | Single Phase | Standard | 200V | 1A | 1.05V @ 1A | 5µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.300", 7.62mm) | DFM |
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 1KV 4A GBU |
8.375 |
|
- | Single Phase | Standard | 1kV | 4A | 1V @ 1.5A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 600V 4A GBU |
3.134 |
|
- | Single Phase | Standard | 600V | 4A | 1V @ 2A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
|
|
GeneSiC Semiconductor |
BRIDGE RECT 1PHASE 200V 4A GBL |
596 |
|
- | Single Phase | Standard | 200V | 4A | 1.1V @ 4A | 5µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | GBL |
|
|
Central Semiconductor Corp |
BRIDGE RECT 1PHASE 600V 1A 4DIP |
16.848 |
|
- | Single Phase | Standard | 600V | 1A | 1.1V @ 1A | 10µA @ 600V | -65°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.300", 7.62mm) | 4-DIP |
|
|
GeneSiC Semiconductor |
BRIDGE RECT 1PHASE 200V 8A GBU |
3.678 |
|
- | Single Phase | Standard | 200V | 8A | 1.1V @ 8A | 5µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1PHASE 200V 2.3A GBU |
14.196 |
|
- | Single Phase | Standard | 200V | 2.3A | 1V @ 2A | 5µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECT 1P 800V 15A TS-6P |
271 |
|
- | Single Phase | Standard | 800V | 15A | 1.1V @ 15A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, TS-6P | TS-6P |
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECT 1P 600V 10A TS-6P |
20.772 |
|
- | Single Phase | Standard | 600V | 10A | 1.1V @ 15A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, TS-6P | TS-6P |
|
|
ON Semiconductor |
BRIDGE RECT 1P 800V 20A TS-6P |
137 |
|
- | Single Phase | Standard | 800V | 20A | 1.1V @ 20A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, TS-6P | TS-6P |
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 600V 3.5A BU |
13.590 |
|
isoCink+™ | Single Phase | Standard | 600V | 3.5A | 1.05V @ 12.5A | 5µA @ 600V | -55°C ~ 175°C (TJ) | Through Hole | 4-SIP, BU | isoCINK+™ BU |
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 800V 30A PB |
358 |
|
- | Single Phase | Standard | 800V | 30A | 1.1V @ 15A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP, PB | isoCINK+™ PB |
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 800V 40A PB |
1.648 |
|
- | Single Phase | Standard | 800V | 40A | 1.1V @ 20A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP, PB | isoCINK+™ PB |
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1PHASE 600V 6A KBU |
2.509 |
|
- | Single Phase | Standard | 600V | 6A | 1V @ 6A | 5µA @ 600V | -50°C ~ 150°C (TJ) | Through Hole | 4-ESIP, KBU | KBU |
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1PHASE 200V 15A GBPC |
12.240 |
|
- | Single Phase | Standard | 200V | 15A | 1.1V @ 7.5A | 5µA @ 200V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1PHASE 100V 15A GBPC |
7.776 |
|
- | Single Phase | Standard | 100V | 15A | 1.1V @ 7.5A | 5µA @ 100V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 600V 12A GBPC-W |
8.802 |
|
- | Single Phase | Standard | 600V | 12A | 1.1V @ 6A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1PHASE 400V 12A GBPC |
8.478 |
|
- | Single Phase | Standard | 400V | 12A | 1.1V @ 6A | 5µA @ 400V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 600V 25A GBPC-W |
6.564 |
|
- | Single Phase | Standard | 600V | 25A | 1.1V @ 12.5A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 800V 15A GBPC-W |
1.024 |
|
- | Single Phase | Standard | 800V | 15A | 1.1V @ 7.5A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
|
|
GeneSiC Semiconductor |
BRIDGE RECT 1PHASE 800V 25A GBPC |
20.472 |
|
- | Single Phase | Standard | 800V | 25A | 1.1V @ 12.5A | 5µA @ 800V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
|
|
GeneSiC Semiconductor |
BRIDGE RECT 1P 1KV 25A GBPC-W |
2.140 |
|
- | Single Phase | Standard | 1kV | 25A | 1.1V @ 12.5A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
|
|
GeneSiC Semiconductor |
BRIDGE RECT 1P 800V 25A GBPC-W |
2 |
|
- | Single Phase | Standard | 800V | 25A | 1.1V @ 1.2A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
|
|
GeneSiC Semiconductor |
BRIDGE RECT 1PHASE 400V 25A GBPC |
18.060 |
|
- | Single Phase | Standard | 400V | 25A | 1.1V @ 12.5A | 5µA @ 400V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
|
|
GeneSiC Semiconductor |
BRIDGE RECT 1P 200V 25A GBPC-W |
399 |
|
- | Single Phase | Standard | 200V | 25A | 1.1V @ 12.5A | 5µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
|
|
GeneSiC Semiconductor |
BRIDGE RECT 1P 400V 25A GBPC-W |
437 |
|
- | Single Phase | Standard | 400V | 25A | 1.1V @ 12.5A | 5µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
|
|
GeneSiC Semiconductor |
BRIDGE RECT 1P 400V 35A GBPC-W |
19 |
|
- | Single Phase | Standard | 400V | 35A | 1.1V @ 17.5A | 5µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
|
|
GeneSiC Semiconductor |
BRIDGE RECT 1P 400V 35A GBPC-T |
15.420 |
|
- | Single Phase | Standard | 400V | 35A | 1.1V @ 12.5A | 5µA @ 400V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC-T | GBPC-T |