Microsemi Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
ProduttoreMicrosemi Corporation
Record 611
Pagina 6/21
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Microsemi |
MOSFET N-CH 1000V 35A TO264 |
5.094 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 35A (Tc) | 10V | 400mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | ±30V | 9835pF @ 25V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 500V 84A TO-264 |
4.968 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 84A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340nC @ 10V | ±30V | 13500pF @ 25V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 1000V 14A D3PAK |
3.544 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 1000V | 14A (Tc) | 10V | 780mOhm @ 7A, 10V | 5V @ 1mA | 95nC @ 10V | ±30V | 2525pF @ 25V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3 [S] | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 600V 35A TO-264 |
7.992 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 600V | 35A (Tc) | 10V | 170mOhm @ 17.5A, 10V | 5V @ 2.5mA | 100nC @ 10V | ±30V | 4500pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 600V 40A SOT-227 |
6.750 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 40A (Tc) | 10V | 70mOhm @ 20A, 10V | 3.9V @ 1mA | 259nC @ 10V | ±20V | 7015pF @ 25V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 800V 47A T-MAX |
7.848 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 47A (Tc) | 10V | 210mOhm @ 24A, 10V | 5V @ 2.5mA | 305nC @ 10V | ±30V | 9330pF @ 25V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 1200V 27A T-MAX |
6.444 |
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- | N-Channel | MOSFET (Metal Oxide) | 1200V | 27A (Tc) | 10V | 650mOhm @ 14A, 10V | 5V @ 2.5mA | 300nC @ 10V | ±30V | 9670pF @ 25V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 500V 67A TO-264 |
4.626 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 500V | 67A (Tc) | 10V | 65mOhm @ 33.5A, 10V | 5V @ 2.5mA | 141nC @ 10V | ±30V | 7010pF @ 25V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 500V 67A T-MAX |
5.994 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 500V | 67A (Tc) | 10V | 65mOhm @ 33.5A, 10V | 5V @ 2.5mA | 141nC @ 10V | ±30V | 7010pF @ 25V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 500V 67A TO-264 |
4.446 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 500V | 67A (Tc) | 10V | 65mOhm @ 33.5A, 10V | 5V @ 2.5mA | 141nC @ 10V | ±30V | 7010pF @ 25V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 600V 31A SOT-227 |
2.664 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 150mOhm @ 21A, 10V | 5V @ 2.5mA | 215nC @ 10V | ±30V | 5890pF @ 25V | - | 355W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 650V 94A TO-247 |
2.700 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 94A (Tc) | 10V | 35mOhm @ 47A, 10V | 3.9V @ 5.8mA | 580nC @ 10V | ±20V | 13940pF @ 25V | - | 833W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 500V 41A SOT227 |
7.848 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 500V | 41A (Tc) | 10V | 100mOhm @ 23A, 10V | 5V @ 2.5mA | 96nC @ 10V | ±30V | 4360pF @ 25V | - | 378W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 500V 38A SOT-227 |
6.048 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 500V | 38A (Tc) | 10V | 100mOhm @ 28A, 10V | 5V @ 2.5mA | 220nC @ 10V | ±30V | 8800pF @ 25V | - | 355W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 500V 58A SOT227 |
4.698 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 500V | 58A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340nC @ 10V | ±30V | 10800pF @ 25V | - | 543W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 100V 142A SOT227 |
7.056 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 142A (Tc) | 10V | 11mOhm @ 71A, 10V | 4V @ 2.5mA | 300nC @ 10V | ±30V | 8600pF @ 25V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 200V 97A SOT-227 |
5.688 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 97A (Tc) | 10V | 22mOhm @ 48.5A, 10V | 4V @ 2.5mA | 290nC @ 10V | ±30V | 8500pF @ 25V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 200V 97A SOT-227 |
2.952 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 97A (Tc) | 10V | 22mOhm @ 48.5A, 10V | 4V @ 2.5mA | 290nC @ 10V | ±30V | 8500pF @ 25V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 500V 58A SOT-227 |
3.600 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 500V | 58A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340nC @ 10V | ±30V | 10800pF @ 25V | - | 543W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 500V 51A SOT227 |
2.196 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 500V | 51A (Tc) | 10V | 75mOhm @ 25.5A, 10V | 5V @ 1mA | 123nC @ 10V | ±30V | 5590pF @ 25V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 500V 51A SOT-227 |
6.624 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 51A (Tc) | 10V | 75mOhm @ 25.5A, 10V | 5V @ 1mA | 123nC @ 10V | ±30V | 5590pF @ 25V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 600V 42A SOT-227 |
7.416 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 42A (Tc) | 10V | 110mOhm @ 28A, 10V | 5V @ 2.5mA | 280nC @ 10V | ±30V | 11300pF @ 25V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 500V 67A T-MAX |
4.680 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 500V | 67A (Tc) | 10V | 65mOhm @ 33.5A, 10V | 5V @ 2.5mA | 141nC @ 10V | ±30V | 7010pF @ 25V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 500V 44A SOT227 |
3.744 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 44A (Tc) | 10V | 100mOhm @ 22A, 10V | 4V @ 2.5mA | 312nC @ 10V | ±30V | 7410pF @ 25V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 800V 38A T-MAX |
6.948 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 800V | 38A (Tc) | 10V | 200mOhm @ 19A, 10V | 5V @ 2.5mA | 195nC @ 10V | ±30V | 5200pF @ 25V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 500V 59A SOT227 |
2.196 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 500V | 58A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340nC @ 10V | ±30V | 10800pF @ 25V | - | 543W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 1000V 20A SOT-227 |
4.356 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 20A (Tc) | 10V | 440mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V | 8500pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 1200V 22A T-MAX |
4.716 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 1200V | 22A (Tc) | 10V | 570mOhm @ 11A, 10V | 5V @ 2.5mA | 290nC @ 10V | ±30V | 6200pF @ 25V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 |
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Microsemi |
MOSFET N-CH 600V 49A SOT-227 |
2.592 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 49A (Tc) | 10V | 90mOhm @ 33A, 10V | 5V @ 2.5mA | 330nC @ 10V | ±30V | 13190pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 300V 70A SOT-227 |
4.644 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 300V | 70A (Tc) | 10V | 40mOhm @ 500mA, 10V | 4V @ 2.5mA | 425nC @ 10V | ±30V | 10200pF @ 25V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |