Microsemi Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreMicrosemi Corporation
Record 2.560
Pagina 27/86
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE SCHOTTKY 20V 1A DO213AB |
6.399 |
|
- | Schottky | 20V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 20V | - | Surface Mount | DO-213AB, MELF | DO-213AB | -55°C ~ 125°C |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 1A AXIAL |
7.596 |
|
Military, MIL-PRF-19500/228 | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 300V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
2.358 |
|
Military, MIL-PRF-19500/360 | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURPOSE |
2.970 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE SCHOTTKY 60V 1A DO213AB |
5.310 |
|
- | Schottky | 60V | 1A | 690mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Surface Mount | DO-213AB, MELF | DO-213AB | -55°C ~ 125°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 50V 1A DO213AB |
3.474 |
|
- | Schottky | 50V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 50V | 0.9pF @ 5V, 1MHz | Surface Mount | DO-213AB, MELF | DO-213AB | - |
|
|
|
Microsemi |
DIODE GEN PURP 600V 1A AXIAL |
7.164 |
|
Military, MIL-PRF-19500/228 | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 300V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 800V 1A AXIAL |
3.906 |
|
Military, MIL-PRF-19500/228 | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 800V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 1A AXIAL |
4.590 |
|
Military, MIL-PRF-19500/427 | Standard | 200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 100A TO247 |
508 |
|
- | Standard | 600V | 100A | 1.6V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | TO-247-2 | TO-247 | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 100V 2.5A AXIAL |
5.058 |
|
Military, MIL-PRF-19500/477 | Standard | 100V | 2.5A | 975mV @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 150V 2.5A AXIAL |
1.382 |
|
Military, MIL-PRF-19500/477 | Standard | 150V | 2.5A | 975mV @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 800V 1A AXIAL |
6.012 |
|
Military, MIL-PRF-19500/429 | Standard | 800V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 800V | 20pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 1A AXIAL |
6.246 |
|
Military, MIL-PRF-19500/427 | Standard | 1000V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 1000V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 5A AXIAL |
10.175 |
|
Military, MIL-PRF-19500/420 | Standard | 400V | 5A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 400V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
7.758 |
|
Military, MIL-PRF-19500/359 | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURPOSE |
6.264 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE GEN PURP 200V 5A AXIAL |
4.482 |
|
Military, MIL-PRF-19500/420 | Standard | 200V | 5A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 200V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURPOSE |
7.416 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE GEN PURP 220V 1.2A AXIAL |
6.066 |
|
- | Standard | 220V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 220V | 10pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 150V 300MA B-MELF |
6.012 |
|
Military, MIL-PRF-19500/578 | Standard | 150V | 300mA | 1.1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 150V | 2.5pF @ 0V, 1MHz | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 150V 300MA D-MELF |
5.400 |
|
Military, MIL-PRF-19500/578 | Standard | 150V | 300mA | 1.1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 150V | 2.5pF @ 0V, 1MHz | Surface Mount | DO-213AB, MELF | B, SQ-MELF | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 45V 1A DO204AL |
3.920 |
|
- | Schottky | 45V | 1A | 340mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 45V | 70pF @ 5V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 125°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 3A AXIAL |
7.812 |
|
Military, MIL-PRF-19500/411 | Standard | 50V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 50V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 100V 3A AXIAL |
5.526 |
|
Military, MIL-PRF-19500/411 | Standard | 100V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 100V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 3A AXIAL |
5.220 |
|
Military, MIL-PRF-19500/411 | Standard | 200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 150V 2.5A D5A |
7.182 |
|
Military, MIL-PRF-19500/477 | Standard | 150V | 2.5A | 975mV @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 100V 6A AXIAL |
5.238 |
|
Military, MIL-PRF-19500/477 | Standard | 100V | 6A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 60pF @ 10V, 1MHz | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 150V 6A AXIAL |
132 |
|
Military, MIL-PRF-19500/477 | Standard | 150V | 6A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | 60pF @ 10V, 1MHz | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 100V 3A AXIAL |
3.456 |
|
- | Standard | 100V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 2µA @ 100V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |