Microsemi Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreMicrosemi Corporation
Record 2.560
Pagina 25/86
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
8.118 |
|
Military, MIL-PRF-19500/286 | Standard | 400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 75V 150MA DO35 |
1.132 |
|
Military, MIL-PRF-19500/337 | Standard | 75V | 150mA (DC) | 880mV @ 20mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 50nA @ 50V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 500V 3A B-MELF |
3.060 |
|
- | Standard | 500V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 1µA @ 500V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 125V 150MA DO35 |
3.042 |
|
Military, MIL-PRF-19500/241 | Standard | 125V | 150mA | 920mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 2nA @ 125V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 1A AXIAL |
6.768 |
|
Military, MIL-PRF-19500/429 | Standard | 600V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 500nA @ 800V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 1A AXIAL |
128 |
|
Military, MIL-PRF-19500/286 | Standard | 200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURPOSE |
6.192 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
RECTIFIER DIODE |
6.030 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 1A AXIAL |
5.274 |
|
- | Standard | 1000V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 1000V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 200V 75A D3 |
4.266 |
|
- | Schottky | 200V | 75A | 900mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 1mA @ 200V | - | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3 [S] | -55°C ~ 150°C |
|
|
|
Microsemi |
5A SCHOTTKY RECTIFIER |
2.358 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE GEN PURP 200V 1A AXIAL |
8.748 |
|
Military, MIL-PRF-19500/228 | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
5.580 |
|
Military, MIL-PRF-19500/427 | Standard | 400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 1A AXIAL |
5.760 |
|
Military, MIL-PRF-19500/427 | Standard | 600V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 600V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 3A AXIAL |
3.456 |
|
- | Standard | 400V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 400V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 225V 400MA DO213 |
5.958 |
|
- | Standard | 225V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 225V | - | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 250V 200MA DO213 |
2.646 |
|
- | Standard | 250V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 100µA @ 250V | - | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 1A D5A |
8.784 |
|
- | Standard | 1000V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 1000V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 60V 1A DO213AB |
8.586 |
|
- | Schottky | 60V | 1A | 690mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | 0.9pF @ 5V, 1MHz | Surface Mount | DO-213AB, MELF | DO-213AB | - |
|
|
|
Microsemi |
DIODE GEN PURP 600V 3A AXIAL |
8.694 |
|
Military, MIL-PRF-19500/420 | Standard | 600V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 1A AXIAL |
7.218 |
|
- | Standard | 600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 1µA @ 600V | 25pF @ 12V, 1MHz | Through Hole | A, Axial | Axial | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 1A AXIAL |
5.706 |
|
Military, MIL-PRF-19500/429 | Standard | 600V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 500nA @ 600V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
ZENER DIODE |
2.106 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE GEN PURP 800V 1A AXIAL |
5.706 |
|
Military, MIL-PRF-19500/286 | Standard | 800V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 800V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 800V 1A AXIAL |
3.114 |
|
Military, MIL-PRF-19500/427 | Standard | 800V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 800V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 3A AXIAL |
5.148 |
|
- | Standard | 50V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 50V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 125V 150MA DO213 |
8.082 |
|
- | Standard | 125V | 150mA (DC) | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 1nA @ 125V | - | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURPOSE |
8.838 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE GEN PURP 600V 1A AXIAL |
7.074 |
|
Military, MIL-PRF-19500/228 | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 600V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
SCHOTTKY DIODE |
15.480 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |