Infineon Technologies Transistor - FET, MOSFET - Array
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Mostra filtri
Ripristina filtri
Applica filtri
CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Array
ProduttoreInfineon Technologies
Record 393
Pagina 6/14
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Funzione FET | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Capacità di ingresso (Ciss) (Max) @ Vds | Potenza - Max | Temperatura di esercizio | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
MOSFET 2N-CH 8TDSON |
6.930 |
|
Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Standard | 60V | 20A | 15.5mOhm @ 17A, 10V | 4V @ 20µA | 29nC @ 10V | 2260pF @ 25V | 50W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
|
|
|
Infineon Technologies |
MOSFET N/P-CH 30V 5.8A 8SOIC |
6.030 |
|
HEXFET® | N and P-Channel | Logic Level Gate | 30V | 5.8A, 4.3A | 45mOhm @ 5.8A, 10V | 3V @ 250µA | 25nC @ 10V | 520pF @ 25V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 25V 16A SA |
2.772 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 25V | 16A | 4.2mOhm @ 16A, 10V | 2.1V @ 35µA | 13nC @ 4.5V | 1350pF @ 13V | 1.7W | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SA | DIRECTFET™ SA |
|
|
|
Infineon Technologies |
MOSFET N/P-CH 30V 8SOIC |
8.388 |
|
HEXFET® | N and P-Channel | Logic Level Gate | 30V | 6.5A, 4.9A | 29mOhm @ 5.8A, 10V | 3V @ 250µA | 33nC @ 10V | 650pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 100V 2.3A 8PQFN |
5.400 |
|
HEXFET® | 2 N-Channel (Dual) | Standard | 100V | 2.3A | 195mOhm @ 2.9A, 10V | 4V @ 10µA | 6.3nC @ 10V | 251pF @ 25V | 2.3W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-PQFN (3.3x3.3), Power33 |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 5.1A |
7.452 |
|
HEXFET® | 2 N-Channel (Dual) | Standard | 55V | 5.1A | 50mOhm @ 5.1A, 10V | 1V @ 250µA (Min) | 44nC @ 10V | 780pF @ 25V | 2.4W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 8TDSON |
3.924 |
|
Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 60V | 20A | 11.2mOhm @ 17A, 10V | 2.2V @ 28µA | 53nC @ 10V | 4020pF @ 25V | 65W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 8TDSON |
8.406 |
|
Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 60V | 20A | 11.2mOhm @ 17A, 10V | 2.2V @ 28µA | 53nC @ 10V | 4020pF @ 25V | 65W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PG-TDSON-8-10 |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 25V 16A/31A TISON8 |
7.956 |
|
OptiMOS™ | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate, 4.5V Drive | 25V | 11A, 31A | 4.6mOhm @ 25A, 10V | 2V @ 250µA | 6.6nC @ 4.5V | 4500pF @ 12V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TISON-8 |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 40V 43A 8PQFN |
6.624 |
|
HEXFET® | 2 N-Channel (Dual) | Standard | 40V | 43A (Tc) | 10mOhm @ 26A, 10V | 3.9V @ 25µA | 33nC @ 10V | 1060pF @ 25V | 34W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PQFN (5x6) |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 25V 19A/33A 8TISON |
3.276 |
|
- | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate, 4.5V Drive | 25V | 19A, 33A | 3mOhm @ 20A, 10V | 2V @ 250µA | 8.4nC @ 4.5V | 1100pF @ 12V | 2.5W | -55°C ~ 155°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TISON-8 |
|
|
|
Infineon Technologies |
MOSFET 2P-CH 30V 4.9A 8SOIC |
3.366 |
|
HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 30V | - | 58mOhm @ 4.9A, 10V | 3V @ 250µA | 34nC @ 10V | 710pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET 2P-CH 30V 14A DIRECTFET |
3.924 |
|
HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 30V | 14A | 7mOhm @ 14A, 10V | 2.4V @ 50µA | 64nC @ 10V | 3241pF @ 15V | 2.1W | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MC | DIRECTFET™ MC |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 25V 19A/39A 8TISON |
6.912 |
|
OptiMOS™ | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate, 4.5V Drive | 25V | 19A, 39A | 3mOhm @ 20A, 10V | 2V @ 250µA | 8.4nC @ 4.5V | 1040pF @ 12V | 2.5W | -55°C ~ 155°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TISON-8 |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 40V 50A 8PQFN |
7.866 |
|
HEXFET® | 2 N-Channel (Dual) | Standard | 40V | 50A | 5.9mOhm @ 40A, 10V | 3.9V @ 50µA | 60nC @ 10V | 2250pF @ 25V | 50W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PQFN (5x6) |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 30V 13A/28A PQFN |
3.384 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 13A, 28A | 8.6mOhm @ 12A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | 1060pF @ 15V | 2.4W, 3.4W | -55°C ~ 150°C (TJ) | Surface Mount | 18-PowerVQFN | PQFN (5x6) |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 25V 64A/188A PQFN |
3.582 |
|
FASTIRFET™ | 2 N-Channel (Dual), Schottky | Logic Level Gate | 25V | 64A, 188A | 3.2mOhm @ 30A, 10V | 2.1V @ 35µA | 15nC @ 4.5V | 1314pF @ 13V | 31W, 63W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 25V 303A PQFN |
7.002 |
|
- | 2 N-Channel (Dual) | Standard | 25V | 303A (Tc) | - | - | - | - | - | - | Surface Mount | 32-PowerWFQFN | 32-PQFN (6x6) |
|
|
|
Infineon Technologies |
MOSFET N/P-CH 20V 3A/2.5A 8-SOIC |
6.642 |
|
HEXFET® | N and P-Channel | Standard | 20V | 3A, 2.5A | 125mOhm @ 1A, 10V | 1V @ 250µA | 25nC @ 10V | 300pF @ 15V | 2W | - | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 50V 2A 8-SOIC |
7.578 |
|
HEXFET® | 2 N-Channel (Dual) | Standard | 50V | 2A | 300mOhm @ 1.5A, 10V | 3V @ 250µA | 6.6nC @ 10V | 120pF @ 25V | 2W | - | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET 2P-CH 20V 4.3A 8-SOIC |
6.984 |
|
HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4.3A | 90mOhm @ 2.2A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | 610pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 20V 6.6A 8-SOIC |
3.618 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 6.6A | 29mOhm @ 6A, 4.5V | 700mV @ 250µA | 27nC @ 4.5V | 900pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET 2P-CH 30V 4.9A 8-SOIC |
4.122 |
|
HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 58mOhm @ 4.9A, 10V | 1V @ 250µA | 34nC @ 10V | 710pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET 2P-CH 20V 9A 8-SOIC |
8.532 |
|
HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 20V | 9A | 18mOhm @ 9A, 4.5V | 1V @ 250µA | 63nC @ 5V | 2940pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET 2P-CH 55V 3.4A 8-SOIC |
4.320 |
|
HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 55V | 3.4A | 105mOhm @ 3.4A, 10V | 1V @ 250µA | 38nC @ 10V | 690pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET N/P-CH 30V 8-SOIC |
6.354 |
|
HEXFET® | N and P-Channel | Standard | 30V | 5.8A, 4.3A | 45mOhm @ 5.8A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET N/P-CH 30V 8-SOIC |
3.276 |
|
HEXFET® | N and P-Channel | Logic Level Gate | 30V | - | 29mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET N/P-CH 30V 8-SOIC |
2.988 |
|
HEXFET® | N and P-Channel | Logic Level Gate | 30V | 3.5A, 2.3A | 100mOhm @ 2.2A, 10V | 1V @ 250µA | 14nC @ 10V | 190pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET 2P-CH 30V 2.3A 8-SOIC |
629 |
|
HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 30V | 2.3A | 250mOhm @ 1A, 10V | 1V @ 250µA | 12nC @ 10V | 190pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 30V 3.5A 8-SOIC |
2.520 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 3.5A | 100mOhm @ 2.2A, 10V | 1V @ 250µA | 14nC @ 10V | 190pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |