GeneSiC Semiconductor Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreGeneSiC Semiconductor
Record 764
Pagina 24/26
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GeneSiC Semiconductor |
DIODE GEN PURP 800V 320A DO205AB |
7.776 |
|
- | Standard | 800V | 320A | 1.4V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 60mA @ 800V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -40°C ~ 180°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1.2KV 320A DO205 |
2.538 |
|
- | Standard | 1200V | 320A | 1.4V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 60mA @ 1200V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -40°C ~ 180°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 400V 320A DO205AB |
4.428 |
|
- | Standard | 400V | 320A | 1.4V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 60mA @ 400V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -40°C ~ 180°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 800V 320A DO205AB |
3.888 |
|
- | Standard | 800V | 320A | 1.4V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 60mA @ 800V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -40°C ~ 180°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1.2KV 320A DO205 |
4.896 |
|
- | Standard | 1200V | 320A | 1.4V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 60mA @ 1200V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -40°C ~ 180°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1.4KV 320A DO205 |
6.156 |
|
- | Standard | 1400V | 320A | 1.4V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 60mA @ 1400V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -40°C ~ 180°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1.4KV 320A DO205 |
8.748 |
|
- | Standard | 1400V | 320A | 1.4V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 60mA @ 1400V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -40°C ~ 180°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 1.6KV DO205AB |
6.318 |
|
- | Standard, Reverse Polarity | 1600V | 380A | 1.2V @ 380A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1600V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -60°C ~ 180°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 2KV 300A DO205 |
3.582 |
|
- | Standard | 2000V | 300A | 1.2V @ 300A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1600V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -60°C ~ 180°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 2KV DO205AB |
5.418 |
|
- | Standard, Reverse Polarity | 2000V | 300A | 1.2V @ 300A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1600V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -60°C ~ 180°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1.6KV 320A DO205 |
4.734 |
|
- | Standard | 1600V | 320A | 1.4V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 60mA @ 1600V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -40°C ~ 180°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1.6KV 320A DO205 |
5.022 |
|
- | Standard | 1600V | 320A | 1.4V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 60mA @ 1600V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -40°C ~ 180°C |
|
|
|
GeneSiC Semiconductor |
DIODE GP 1.8KV 165A DO205AB |
3.562 |
|
- | Standard | 1800V | 165A | 1.5V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 22mA @ 1800V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -55°C ~ 150°C |
|
|
|
GeneSiC Semiconductor |
DIODE GP 1.8KV 165A DO205AB |
6.948 |
|
- | Standard, Reverse Polarity | 1800V | 165A | 1.5V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 22mA @ 1800V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -55°C ~ 150°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 2KV 380A DO205 |
7.830 |
|
- | Standard | 2000V | 380A | 1.2V @ 380A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1600V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -60°C ~ 180°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1.6KV 400A DO205 |
7.614 |
|
- | Standard | 1600V | 400A | 1.2V @ 400A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -60°C ~ 200°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 1.6KV DO205AB |
2.520 |
|
- | Standard, Reverse Polarity | 1600V | 400A | 1.2V @ 400A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -60°C ~ 200°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 2KV DO205AB |
7.254 |
|
- | Standard, Reverse Polarity | 2000V | 380A | 1.2V @ 380A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1600V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -60°C ~ 180°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 800V 400A DO205AB |
2.106 |
|
- | Standard | 800V | 400A | 1.2V @ 400A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -60°C ~ 200°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 800V 400A DO9 |
7.434 |
|
- | Standard, Reverse Polarity | 800V | 400A | 1.2V @ 400A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -60°C ~ 200°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1.2KV 400A DO205 |
6.588 |
|
- | Standard | 1200V | 400A | 1.2V @ 400A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -60°C ~ 200°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 1.2KV DO205AB |
5.058 |
|
- | Standard, Reverse Polarity | 1200V | 400A | 1.2V @ 400A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -60°C ~ 200°C |
|
|
|
GeneSiC Semiconductor |
DIODE SILICON 1.2KV 8A TO257 |
5.166 |
|
- | Silicon Carbide Schottky | 1200V | 8A (DC) | 1.6V @ 2.5A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 1200V | 237pF @ 1V, 1MHz | Through Hole | TO-257-3 | TO-257 | -55°C ~ 250°C |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 1.2KV 9.4A TO257 |
7.542 |
|
- | Silicon Carbide Schottky | 1200V | 9.4A (DC) | 1.6V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 1200V | 884pF @ 1V, 1MHz | Through Hole | TO-257-3 | TO-257 | -55°C ~ 250°C |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 650V 1A TO276 |
4.122 |
|
- | Silicon Carbide Schottky | 650V | 1A | 1.5V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 650V | 76pF @ 1V, 1MHz | Through Hole | TO-276AA | TO-276 | -55°C ~ 250°C |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 650V 4.3A TO276 |
5.904 |
|
- | Silicon Carbide Schottky | 650V | 4.3A (DC) | 1.65V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 650V | 274pF @ 1V, 1MHz | Surface Mount | TO-276AA | TO-276 | -55°C ~ 250°C |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 650V 9.4A TO257 |
7.884 |
|
- | Silicon Carbide Schottky | 650V | 9.4A (DC) | 1.34V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 650V | 1107pF @ 1V, 1MHz | Through Hole | TO-257-3 | TO-257 | -55°C ~ 250°C |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 650V 14.6A TO276 |
4.428 |
|
- | Silicon Carbide Schottky | 650V | 14.6A (DC) | 1.5V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 650V | 1107pF @ 1V, 1MHz | Surface Mount | TO-276AA | TO-276 | -55°C ~ 250°C |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 1.2KV 5A TO220AC |
5.724 |
|
- | Silicon Carbide Schottky | 1200V | 5A | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 260pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 1200V 10A TO220AC |
4.680 |
|
- | Silicon Carbide Schottky | 1200V | 10A | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 1200V | 520pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |