Vishay Semiconductor Diodes Division Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreVishay Semiconductor Diodes Division
Record 11.281
Pagina 3/377
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 10A TO277A |
145.680 |
|
eSMP® | Schottky | 100V | 10A | 880mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 100V | 270pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 5A DO214AB |
346.512 |
|
- | Schottky | 40V | 5A | 490mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 1.5A SMA |
1.426.038 |
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- | Schottky | 40V | 1.5A | 490mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 134pF @ 10V, 1MHz | Surface Mount | DO-214AC, SMA | SMA | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 5A DO214AB |
345.072 |
|
- | Schottky | 30V | 5A | 450mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700µA @ 30V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 5A DPAK |
231.828 |
|
FRED Pt® | Standard | 600V | 5A | 1.85V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 8A TO277A |
1.129.470 |
|
eSMP®, TMBS® | Schottky | 100V | 8A | 680mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 70µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1000V 3A SOD64 |
51.648 |
|
- | Avalanche | 1000V | 3A | 1.2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 1000V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 10A TO277A |
245.478 |
|
eSMP®, TMBS® | Schottky | 100V | 10A | 680mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 120V 12A TO277A |
108.996 |
|
eSMP®, TMBS® | Schottky | 120V | 12A | 800mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 120V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1000V 3A SOD64 |
52.044 |
|
- | Avalanche | 1000V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1000V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 12A TO277A |
241.398 |
|
eSMP®, TMBS® | Schottky | 100V | 12A | 700mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 4A DO214AB |
211.356 |
|
- | Schottky | 40V | 4A | 440mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.5KV 3A DO201AD |
36.690 |
|
SUPERECTIFIER® | Standard | 1500V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 20µs | 5µA @ 1500V | 40pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A DPAK |
367.146 |
|
FRED Pt® | Standard | 600V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 220ns | 10µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A DPAK |
22.464 |
|
FRED Pt® | Standard | 600V | 15A | 2.1V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 36ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A DPAK |
17.466 |
|
FRED Pt® | Standard | 600V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 20A TO263AB |
60.138 |
|
TMBS® | Schottky | 100V | 20A | 900mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 30A TO263AB |
44.544 |
|
TMBS® | Schottky | 100V | 30A | 910mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 100V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 3.5A DPAK |
98.712 |
|
Automotive, AEC-Q101 | Schottky | 60V | 3.5A | 610mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 60V | 145pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A D2PAK |
116.202 |
|
FRED Pt® | Standard | 600V | 30A | 2V @ 70A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 30µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A TO252AA |
52.656 |
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HEXFRED® | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 5µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 30A TO247AC |
75.432 |
|
FRED Pt® | Standard | 300V | 30A | 1.25V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 60µA @ 300V | - | Through Hole | TO-247-2 | TO-247AC Modified | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 8A TO252 |
15.528 |
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- | Standard | 1200V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 270ns | 100µA @ 1200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 8A TO252AA |
12.435 |
|
- | Standard | 200V | 8A | 1.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 100µA @ 200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 40A TO247AC |
14.400 |
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- | Standard | 800V | 40A | 1.1V @ 40A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 800V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 40A TO247AC |
87.396 |
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- | Standard | 1200V | 40A | 1.1V @ 40A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO247AC |
7.922 |
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- | Standard | 600V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 80A TO247AC |
17.580 |
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- | Standard | 1200V | 80A | 1.17V @ 80A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GP 400V 150A POWIRTAB |
25.026 |
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- | Standard | 400V | 150A | 1.3V @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | 93ns | 50µA @ 400V | - | Through Hole | PowerTab™, PowIRtab™ | PowIRtab™ | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 40A DO203AB |
275 |
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- | Standard, Reverse Polarity | 100V | 40A | 1.3V @ 126A | Standard Recovery >500ns, > 200mA (Io) | - | 2.5mA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 200°C |