Vishay Semiconductor Diodes Division Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreVishay Semiconductor Diodes Division
Record 11.281
Pagina 284/377
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 3A DO204AC |
2.070 |
|
- | Schottky | 20V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 3A DO201AD |
4.464 |
|
- | Schottky | 30V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 3A DO201AD |
8.604 |
|
- | Schottky | 40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 3A DO201AD |
8.316 |
|
- | Schottky | 60V | 3A | 700mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 3A DO204AC |
6.462 |
|
- | Schottky | 60V | 3A | 700mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
3.186 |
|
- | Standard | 600V | 1A | 2.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A DO204AL |
7.056 |
|
- | Standard | 800V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 800V | 12pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -50°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 3A DO201AD |
7.254 |
|
- | Standard | 50V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 50V | 28pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 3A DO201AD |
2.592 |
|
- | Standard | 150V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 150V | 28pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO201AD |
6.930 |
|
- | Standard | 400V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 400V | 28pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 6A P600 |
6.570 |
|
- | Standard | 800V | 6A | 1.3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 800V | - | Through Hole | P600, Axial | P600 | -50°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1.5A GP20 |
3.996 |
|
- | Standard | 400V | 1.5A | 1.8V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1.5A GP20 |
2.610 |
|
- | Standard | 600V | 1.5A | 1.8V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A P600 |
3.598 |
|
- | Standard | 400V | 3A | 1.8V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | - | Through Hole | P600, Axial | P600 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A P600 |
6.120 |
|
- | Standard | 600V | 3A | 2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | - | Through Hole | P600, Axial | P600 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 600MA DO204 |
4.536 |
|
SUPERECTIFIER® | Standard | 600V | 600mA | 1.4V @ 600mA | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 600MA DO204 |
8.478 |
|
SUPERECTIFIER® | Standard | 600V | 600mA | 1.4V @ 600mA | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
6.120 |
|
- | Standard | 400V | 1A | - | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | - | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
8.766 |
|
- | Standard | 400V | 1A | - | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | - | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
7.686 |
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SUPERECTIFIER® | Standard | 200V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 200V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
8.460 |
|
SUPERECTIFIER® | Standard | 400V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
5.220 |
|
SUPERECTIFIER® | Standard | 600V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
6.894 |
|
- | Standard | 1000V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 1000V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A DO204AL |
6.246 |
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SUPERECTIFIER® | Standard | 50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 50V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
4.716 |
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SUPERECTIFIER® | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 100V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
5.562 |
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SUPERECTIFIER® | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 100V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
5.382 |
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SUPERECTIFIER® | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 200V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
7.758 |
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SUPERECTIFIER® | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 200V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
7.956 |
|
SUPERECTIFIER® | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 400V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
4.554 |
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SUPERECTIFIER® | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 400V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |