Vishay Semiconductor Diodes Division Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreVishay Semiconductor Diodes Division
Record 11.281
Pagina 283/377
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 2A GP20 |
5.076 |
|
- | Standard | 50V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 2A GP20 |
3.436 |
|
- | Standard | 50V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2A GP20 |
2.178 |
|
- | Standard | 100V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2A GP20 |
5.364 |
|
- | Standard | 100V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A GP20 |
6.084 |
|
- | Standard | 200V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 175°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A GP20 |
2.700 |
|
- | Standard | 200V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 175°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 2A GP20 |
4.068 |
|
- | Standard | 400V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 2A GP20 |
2.178 |
|
- | Standard | 400V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2A GP20 |
6.012 |
|
- | Standard | 600V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2A GP20 |
7.938 |
|
- | Standard | 600V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO201AD |
7.992 |
|
SUPERECTIFIER® | Standard | 100V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO201AD |
4.824 |
|
SUPERECTIFIER® | Standard | 200V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO201AD |
5.706 |
|
SUPERECTIFIER® | Standard | 400V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A DO201AD |
2.160 |
|
SUPERECTIFIER® | Standard | 600V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 3A DO201AD |
3.528 |
|
SUPERECTIFIER® | Standard | 800V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 3A DO201AD |
8.946 |
|
SUPERECTIFIER® | Standard | 1000V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 500MA AXIAL |
2.070 |
|
- | Standard | 200V | 500mA | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | Axial | Axial | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 500MA AXIAL |
8.496 |
|
- | Standard | 200V | 500mA | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | Axial | Axial | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 500MA AXIAL |
8.766 |
|
- | Standard | 1000V | 500mA | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | Axial | Axial | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 500MA AXIAL |
5.094 |
|
- | Standard | 1000V | 500mA | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | Axial | Axial | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A MPG06 |
8.208 |
|
- | Standard | 200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 6.6pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A MPG06 |
7.488 |
|
- | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | 6.6pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A MPG06 |
6.966 |
|
- | Standard | 600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 600V | 6.6pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 600MA MPG06 |
5.076 |
|
- | Schottky | 20V | 600mA | 550mV @ 600mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | MPG06, Axial | MPG06 | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 600MA MPG06 |
3.654 |
|
- | Schottky | 40V | 600mA | 550mV @ 600mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | MPG06, Axial | MPG06 | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 600MA MPG06 |
6.570 |
|
- | Schottky | 60V | 600mA | 700mV @ 600mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | MPG06, Axial | MPG06 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 1A DO204AL |
2.700 |
|
- | Schottky | 20V | 1A | 480mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 1A DO204AL |
8.190 |
|
- | Schottky | 40V | 1A | 480mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 1A DO204AL |
6.192 |
|
- | Schottky | 50V | 1A | 650mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 1A DO204AL |
5.994 |
|
- | Schottky | 60V | 1A | 650mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |