Toshiba Semiconductor and Storage Transistor - Bipolare (BJT) - Singolo, pre-polarizzato

Serie

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Tipo di transistor

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Corrente - Collettore (Ic) (Max)

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Tensione - Guasto Collettore Emettitore (Max)

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Resistenza - Base (R1)

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Resistenza - Base Emettitore (R2)

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Guadagno di corrente CC (hFE) (Min) @ Ic, Vce

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Vce Saturazione (Max) @ Ib, Ic

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Corrente - Taglio collettore (Max)

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Frequenza - Transizione

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Potenza - Max

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Tipo di montaggio

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Pacchetto / Custodia

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Pacchetto dispositivo fornitore

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Mostra filtri

Ripristina filtri

Applica filtri

CategoriaSemiconduttori / Transistor / Transistor - Bipolare (BJT) - Singolo, pre-polarizzato

ProduttoreToshiba Semiconductor and Storage

Record 227

Pagina 4/8

Numero parte	Produttore	Descrizione	Disponibile	Serie	Tipo di transistor	Corrente - Collettore (Ic) (Max)	Tensione - Guasto Collettore Emettitore (Max)	Resistenza - Base (R1)	Resistenza - Base Emettitore (R2)	Guadagno di corrente CC (hFE) (Min) @ Ic, Vce	Vce Saturazione (Max) @ Ib, Ic	Corrente - Taglio collettore (Max)	Frequenza - Transizione	Potenza - Max	Tipo di montaggio	Pacchetto / Custodia	Pacchetto dispositivo fornitore
RN1417,LF	Toshiba Semiconductor and Storage	NPN BRT Q1BSR10KOHM Q1BER4.7KOHM	3.526	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN1418,LF	Toshiba Semiconductor and Storage	NPN BRT Q1BSR47KOHM Q1BER10KOHM	5.868	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN2303,LF	Toshiba Semiconductor and Storage	TRANSISTOR PNP BRT Q1BSR22KOHM Q	8.496	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN2406,LF	Toshiba Semiconductor and Storage	TRANSISTOR PNP BRT Q1BSR4.7KOHM	7.596	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN2411,LF	Toshiba Semiconductor and Storage	PNP BRT Q1BSR10KOHM Q1BERINFINIT	7.236	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN2416,LF	Toshiba Semiconductor and Storage	PNP BRT Q1BSR4.7KOHM Q1BER10KOHM	5.886	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN2418,LF	Toshiba Semiconductor and Storage	PNP BRT Q1BSR47KOHM Q1BER10KOHM	5.328	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN1116,LF(CT	Toshiba Semiconductor and Storage	TRANSISTOR NPN BRT Q1BSR4.7KOHM	6.318	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN2103,LF(CT	Toshiba Semiconductor and Storage	PNP BRT Q1BSR22KOHM Q1BER22KOHM	4.806	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN2104,LF(CT	Toshiba Semiconductor and Storage	PNP BRT Q1BSR47KOHM Q1BER47KOHM	3.598	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN2105,LF(CT	Toshiba Semiconductor and Storage	PNP BRT Q1BSR2.2KOHM Q1BER47KOHM	6.228	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN2106,LF(CT	Toshiba Semiconductor and Storage	PNP BRT Q1BSR4.7KOHM Q1BER47KOHM	8.910	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN2108,LF(CT	Toshiba Semiconductor and Storage	PNP BRT Q1BSR22KOHM Q1BER47KOHM	2.304	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN2109,LF(CT	Toshiba Semiconductor and Storage	PNP BRT Q1BSR47KOHM Q1BER22KOHM	3.240	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN2113,LF(CT	Toshiba Semiconductor and Storage	PNP BRT Q1BSR47KOHM Q1BERINFINIT	6.534	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN2425(TE85L,F)	Toshiba Semiconductor and Storage	TRANSISTOR PNP BRT Q1BSR0.47KOHM	8.208	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN2426(TE85L,F)	Toshiba Semiconductor and Storage	TRANSISTOR PNP BRT Q1BSR1KOHM Q1	8.406	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN1101MFV,L3F	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V SOT723	4.896	-	NPN - Pre-Biased	100mA	50V	4.7 kOhms	4.7 kOhms	30 @ 10mA, 5V	300mV @ 500µA, 5mA	500nA	-	150mW	Surface Mount	SOT-723	VESM
RN1104MFV,L3F	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.15W VESM	6.822	-	NPN - Pre-Biased	100mA	50V	47 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 500µA, 5mA	500nA	-	150mW	Surface Mount	SOT-723	VESM
RN1110MFV,L3F	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.15W VESM	2.358	-	NPN - Pre-Biased	100mA	50V	4.7 kOhms	-	120 @ 1mA, 5V	300mV @ 500µA, 5mA	100nA (ICBO)	-	150mW	Surface Mount	SOT-723	VESM
RN1117MFV,L3F	Toshiba Semiconductor and Storage	TRANS NPN PREBIAS 50V 100MA VESM	7.146	-	NPN - Pre-Biased	100mA	50V	10 kOhms	4.7 kOhms	30 @ 10mA, 5V	300mV @ 500µA, 5mA	500nA	250MHz	150mW	Surface Mount	SOT-723	VESM
RN1111MFV,L3F	Toshiba Semiconductor and Storage	X34 PB-F VESM PLN (LF) TRANSISTO	8.154	-	NPN - Pre-Biased	100mA	50V	10 kOhms	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	-	150mW	Surface Mount	SOT-723	VESM
RN1113MFV,L3F	Toshiba Semiconductor and Storage	X34 PB-F VESM TRANSISTOR PD 150M	7.002	-	NPN - Pre-Biased	100mA	50V	47 kOhms	-	120 @ 1mA, 5V	300mV @ 500µA, 5mA	100nA (ICBO)	-	150mW	Surface Mount	SOT-723	VESM
RN1116MFV,L3F	Toshiba Semiconductor and Storage	X34 PB-F VESM TRANSISTOR PD 150M	2.574	-	NPN - Pre-Biased	100mA	50V	4.7 kOhms	10 kOhms	50 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	150mW	Surface Mount	SOT-723	VESM
RN1118MFV,L3F	Toshiba Semiconductor and Storage	X34 PB-F VESM TRANSISTOR PD 150M	5.616	-	NPN - Pre-Biased	100mA	50V	47 kOhms	10 kOhms	50 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	150mW	Surface Mount	SOT-723	VESM
RN1119MFV,L3F	Toshiba Semiconductor and Storage	X34 PB-F VESM TRANSISTOR PD 150M	8.334	-	NPN - Pre-Biased	100mA	50V	1 kOhms	-	120 @ 1mA, 5V	300mV @ 500µA, 5mA	100nA (ICBO)	-	150mW	Surface Mount	SOT-723	VESM
RN1132MFV,L3F	Toshiba Semiconductor and Storage	X34 PB-F VESM TRANSISTOR PD 150M	6.174	-	NPN - Pre-Biased	100mA	50V	200 kOhms	-	120 @ 1mA, 5V	300mV @ 500µA, 5mA	100nA (ICBO)	-	150mW	Surface Mount	SOT-723	VESM
RN2109MFV,L3F	Toshiba Semiconductor and Storage	X34 PB-F VESM TRANSISTOR PD 150M	7.434	-	PNP - Pre-Biased	100mA	50V	47 kOhms	22 kOhms	70 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	-	150mW	Surface Mount	SOT-723	VESM
RN1114MFV,L3F	Toshiba Semiconductor and Storage	X34 PB-F VESM TRANSISTOR PD 150M	4.374	-	NPN - Pre-Biased	100mA	50V	1 kOhms	10 kOhms	50 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	150mW	Surface Mount	SOT-723	VESM
RN2108MFV,L3F	Toshiba Semiconductor and Storage	X34 PB-F VESM TRANSISTOR PD 150M	3.474	-	PNP - Pre-Biased	100mA	50V	22 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	-	150mW	Surface Mount	SOT-723	VESM

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Toshiba Semiconductor and Storage Transistor - Bipolare (BJT) - Singolo, pre-polarizzato

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