Taiwan Semiconductor Corporation Raddrizzatori - Singoli

Serie

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Tipo di diodo

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Tensione - Inversione CC (Vr) (Max)

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Corrente - Media Rettificata (Io)

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Tensione - Avanti (Vf) (Max) @ If

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Velocità

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Tempo di recupero inverso (trr)

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Corrente - Perdita inversa @ Vr

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Capacità @ Vr, F

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Tipo di montaggio

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Pacchetto / Custodia

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Pacchetto dispositivo fornitore

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Temperatura di esercizio - Giunzione

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Mostra filtri

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli

ProduttoreTaiwan Semiconductor Corporation

Record 5.388

Pagina 55/180

Numero parte	Produttore	Descrizione	Disponibile	Serie	Tipo di diodo	Tensione - Inversione CC (Vr) (Max)	Corrente - Media Rettificata (Io)	Tensione - Avanti (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / Custodia	Pacchetto dispositivo fornitore	Temperatura di esercizio - Giunzione
S1AB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO214AA	4.680	-	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1BB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AA	3.204	-	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1DB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AA	7.434	-	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1DBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AA	3.690	Automotive, AEC-Q101	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1GB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AA	2.952	-	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1GBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AA	7.506	Automotive, AEC-Q101	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1JB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AA	8.802	-	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1JBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AA	3.240	Automotive, AEC-Q101	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1KB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AA	6.462	-	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1KBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AA	7.776	Automotive, AEC-Q101	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1MB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 1A DO214AA	3.186	-	Standard	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1MBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 1A DO214AA	2.430	Automotive, AEC-Q101	Standard	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S2KHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 2A DO214AA	3.546	Automotive, AEC-Q101	Standard	800V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 800V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S2MHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 2A DO214AA	3.456	Automotive, AEC-Q101	Standard	-	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 1000V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES1JLHRQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	3.508	Automotive, AEC-Q101	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SF17GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A DO204AL	2.250	Automotive, AEC-Q101	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF18GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	2.052	Automotive, AEC-Q101	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF1KHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO204AL	6.138	Automotive, AEC-Q101	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BYG20D M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A DO214AC	8.568	-	Standard	200V	1.5A	1.4V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	1µA @ 200V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
BYG20G M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1.5A DO214AC	7.542	-	Standard	400V	1.5A	1.4V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	1µA @ 400V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
BYG20J M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1.5A DO214AC	5.202	-	Standard	600V	1.5A	1.4V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	1µA @ 600V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK22A M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A DO214AC	6.750	-	Schottky	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK23A M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A DO214AC	4.572	-	Schottky	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK24A M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A DO214AC	3.906	-	Schottky	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK25A M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 2A DO214AC	3.744	-	Schottky	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK26A M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 2A DO214AC	8.838	-	Schottky	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS110LHM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A SUB SMA	2.988	Automotive, AEC-Q101	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1A R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO214AC	3.636	-	Standard	50V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS1F R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A DO214AC	4.428	-	Standard	300V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
US1A R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO214AC	3.454	-	Standard	50V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C

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