Taiwan Semiconductor Corporation Raddrizzatori - Singoli

Serie

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Tipo di diodo

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Tensione - Inversione CC (Vr) (Max)

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Corrente - Media Rettificata (Io)

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Tensione - Avanti (Vf) (Max) @ If

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Velocità

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Tempo di recupero inverso (trr)

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Corrente - Perdita inversa @ Vr

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Capacità @ Vr, F

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Tipo di montaggio

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Pacchetto / Custodia

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Pacchetto dispositivo fornitore

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Temperatura di esercizio - Giunzione

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Mostra filtri

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli

ProduttoreTaiwan Semiconductor Corporation

Record 5.388

Pagina 53/180

Numero parte	Produttore	Descrizione	Disponibile	Serie	Tipo di diodo	Tensione - Inversione CC (Vr) (Max)	Corrente - Media Rettificata (Io)	Tensione - Avanti (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / Custodia	Pacchetto dispositivo fornitore	Temperatura di esercizio - Giunzione
ES1J M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	3.924	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	18pF @ 1V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS110LHRQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A SUB SMA	6.624	Automotive, AEC-Q101	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS110LHRTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A SUB SMA	5.094	Automotive, AEC-Q101	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS115LHRQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A SUB SMA	7.128	Automotive, AEC-Q101	Schottky	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 150V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS115LHRTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A SUB SMA	8.910	Automotive, AEC-Q101	Schottky	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 150V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS19LHRQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A SUB SMA	8.316	Automotive, AEC-Q101	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS19LHRTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A SUB SMA	8.208	Automotive, AEC-Q101	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SFT11G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1	2.790	-	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
ESDLW RQG	Taiwan Semiconductor Corporation	DIODE, SUPER FAST	4.590	-	Standard	200V	800mA	950mV @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 200V	21pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
ESDLWHRQG	Taiwan Semiconductor Corporation	DIODE, SUPER FAST	5.112	Automotive, AEC-Q101	Standard	200V	800mA	950mV @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 200V	21pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
ESGLW RQG	Taiwan Semiconductor Corporation	DIODE, SUPER FAST	3.544	-	Standard	400V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
ESGLWHRQG	Taiwan Semiconductor Corporation	DIODE, SUPER FAST	6.156	Automotive, AEC-Q101	Standard	400V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
ESJLW RQG	Taiwan Semiconductor Corporation	DIODE, SUPER FAST	3.582	-	Standard	600V	800mA	1.7V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 600V	19pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
ESJLWHRQG	Taiwan Semiconductor Corporation	DIODE, SUPER FAST	4.194	Automotive, AEC-Q101	Standard	600V	800mA	1.7V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 600V	19pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
SFT11GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1	8.532	Automotive, AEC-Q101	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT12GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	6.264	Automotive, AEC-Q101	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT13GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A TS-1	3.580	Automotive, AEC-Q101	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT14GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A TS-1	7.524	Automotive, AEC-Q101	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
ES1ALHRQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	2.376	Automotive, AEC-Q101	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1BLHRQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	7.326	Automotive, AEC-Q101	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1CLHRQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A SUB SMA	5.148	Automotive, AEC-Q101	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SF11GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	7.074	Automotive, AEC-Q101	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF12GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	8.136	Automotive, AEC-Q101	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF13GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A DO204AL	5.688	Automotive, AEC-Q101	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF14GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	4.554	Automotive, AEC-Q101	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SR010HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 500MA DO204	3.564	Automotive, AEC-Q101	Schottky	100V	500mA	850mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	65pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF1GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	8.118	Automotive, AEC-Q101	Standard	400V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF1JHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	5.292	Automotive, AEC-Q101	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF1M R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	5.328	-	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SR220HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 2A DO204AC	6.300	Automotive, AEC-Q101	Schottky	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C

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