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Taiwan Semiconductor Corporation Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreTaiwan Semiconductor Corporation
Record 5.388
Pagina 150/180
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
GPA801HC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 8A TO220AC
4.086
Automotive, AEC-Q101
Standard
50V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 50V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
GPA802 C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 8A TO220AC
2.898
-
Standard
100V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 100V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
GPA802HC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 8A TO220AC
5.256
Automotive, AEC-Q101
Standard
100V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 100V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
GPA803 C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 8A TO220AC
4.644
-
Standard
200V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
GPA803HC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 8A TO220AC
6.336
Automotive, AEC-Q101
Standard
200V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
GPA804 C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 8A TO220AC
3.906
-
Standard
400V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
GPA804HC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 8A TO220AC
2.718
Automotive, AEC-Q101
Standard
400V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
GPA806 C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 8A TO220AC
7.632
-
Standard
800V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
GPA806HC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 8A TO220AC
3.708
Automotive, AEC-Q101
Standard
800V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
GPA807 C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 8A TO220AC
7.740
-
Standard
-
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
GPA807HC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 8A TO220AC
2.196
Automotive, AEC-Q101
Standard
-
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
HERAF1001G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 10A ITO220AC
8.172
-
Standard
50V
10A
1V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 50V
80pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
HERAF1002G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 10A ITO220AC
3.508
-
Standard
100V
10A
1V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 100V
80pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
HERAF1003G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 10A ITO220AC
4.500
-
Standard
200V
10A
1V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
80pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
HERAF1006G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 10A ITO220AC
4.086
-
Standard
600V
10A
1.7V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
80ns
10µA @ 600V
60pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
HERAF1601G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 16A ITO220AC
2.466
-
Standard
50V
16A
1V @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 50V
150pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
HERAF1602G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 16A ITO220AC
2.592
-
Standard
100V
16A
1V @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 100V
150pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
HERAF1603G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 16A ITO220AC
3.348
-
Standard
200V
16A
1V @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
150pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
HERAF1604G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 16A ITO220AC
2.484
-
Standard
300V
16A
1V @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
150pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
HERAF801G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 8A ITO220AC
8.964
-
Standard
50V
8A
1V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 50V
80pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
HERAF802G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 8A ITO220AC
7.578
-
Standard
100V
8A
1V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 100V
80pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
HERAF803G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 8A ITO220AC
2.088
-
Standard
200V
8A
1V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
80pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
HERAF804G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 8A ITO220AC
6.768
-
Standard
300V
8A
1V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
80pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
HERAF805G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 8A ITO220AC
3.294
-
Standard
400V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
80pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
HERAF807G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 8A ITO220AC
6.192
-
Standard
800V
8A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
80ns
10µA @ 800V
60pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
MBR10100 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 10A TO220AC
3.744
-
Schottky
100V
10A
850mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
MBR10150HC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 10A TO220AC
7.596
Automotive, AEC-Q101
Standard
150V
10A
1.05V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
MBR10200 C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 10A TO220AC
7.236
-
Standard
200V
10A
1.05V @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
100µA @ 200V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
MBR10200HC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 10A TO220AC
8.172
Automotive, AEC-Q101
Standard
200V
10A
1.05V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 200V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
MBR1035 C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 35V 10A TO220AC
3.490
-
Standard
35V
10A
700mV @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
100µA @ 35V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C