Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 553/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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IXYS |
MOSFET N-CH 200V 50A TO-247AD |
6.372 |
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MegaMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 50A (Tc) | 10V | 45mOhm @ 25A, 10V | 4V @ 250µA | 220nC @ 10V | ±20V | 4600pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 100V 16A TO-268 |
5.454 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 16A (Tc) | 0V | 64mOhm @ 8A, 0V | - | 225nC @ 5V | ±20V | 5700pF @ 25V | Depletion Mode | 830W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 500V 26A ISOPLUS247 |
3.780 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 26A (Tc) | 10V | 200mOhm @ 13A, 10V | 4V @ 4mA | 160nC @ 10V | ±20V | 4200pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET N-CH 900V ISOPLUS247 |
3.312 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 900V | 10.5A (Tc) | 10V | 660mOhm @ 9A, 10V | 6V @ 1mA | 97nC @ 10V | ±30V | 5230pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET N-CH 300V 88A TO268 |
5.994 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 300V | 88A (Tc) | 10V | 40mOhm @ 44A, 10V | 5V @ 4mA | 180nC @ 10V | ±20V | 6300pF @ 25V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 650V 64A TO-247 |
8.514 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 64A (Tc) | 10V | 51mOhm @ 32A, 10V | 5V @ 250µA | 143nC @ 10V | ±30V | 5500pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 19A ISOPLUS247 |
8.982 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 500V | 19A (Tc) | 10V | 190mOhm @ 18A, 10V | 5V @ 4mA | 93nC @ 10V | ±30V | 5500pF @ 25V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET N-CH 200V 170A PLUS247 |
6.318 |
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GigaMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 170A (Tc) | 10V | 11mOhm @ 60A, 10V | 5V @ 4mA | 265nC @ 10V | ±20V | 19600pF @ 25V | - | 1150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 250V 140A PLUS247 |
5.076 |
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GigaMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 140A (Tc) | 10V | 17mOhm @ 60A, 10V | 5V @ 4mA | 255nC @ 10V | ±20V | 19000pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 300V 120A PLUS247 |
7.290 |
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GigaMOS™ | N-Channel | MOSFET (Metal Oxide) | 300V | 120A (Tc) | 10V | 24mOhm @ 60A, 10V | 5V @ 4mA | 265nC @ 10V | ±20V | 20000pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH |
6.534 |
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- | N-Channel | MOSFET (Metal Oxide) | 1700V | 1A (Tj) | 0V | 16Ohm @ 500mA, 0V | 4.5V @ 250µA | 47nC @ 5V | ±20V | 3090pF @ 25V | Depletion Mode | 290W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247HV | TO-247-3 Variant |
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IXYS |
MOSFET P-CH 600V 10A TO-268 |
7.686 |
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- | P-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 1Ohm @ 5A, 10V | 5V @ 250µA | 160nC @ 10V | ±20V | 4700pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 1500V 3A ISOTO-247 |
3.996 |
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- | N-Channel | MOSFET (Metal Oxide) | 1500V | 3A (Tc) | 10V | 3.85Ohm @ 3A, 10V | 5V @ 250µA | 67nC @ 10V | ±30V | 2230pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 800V 32A PLUS247 |
4.914 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 800V | 32A (Tc) | 10V | 270mOhm @ 16A, 10V | 5V @ 8mA | 150nC @ 10V | ±30V | 8800pF @ 25V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 40V 500A TO-247 |
4.662 |
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TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 40V | 500A (Tc) | 10V | 1.6mOhm @ 100A, 10V | 3.5V @ 250µA | 405nC @ 10V | ±20V | 25000pF @ 25V | - | 1000W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 200V 80A TO-247 |
4.644 |
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Linear™ | N-Channel | MOSFET (Metal Oxide) | 200V | 80A (Tc) | 10V | 32mOhm @ 40A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 6160pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Microsemi |
MOSFET N-CH 800V 25A TO-247 |
2.088 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 25A (Tc) | 10V | 390mOhm @ 12A, 10V | 5V @ 1mA | 150nC @ 10V | ±30V | 4595pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 24A ISOPLUS247 |
4.788 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 500V | 24A (Tc) | 10V | 150mOhm @ 22A, 10V | 5V @ 4mA | 98nC @ 10V | ±30V | 5440pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET N-CH 600V 20A ISOPLUS247 |
4.266 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 200mOhm @ 18A, 10V | 5V @ 4mA | 102nC @ 10V | ±30V | 5800pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET N-CH 300V 120A TO-264 |
8.982 |
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GigaMOS™ | N-Channel | MOSFET (Metal Oxide) | 300V | 120A (Tc) | 10V | 24mOhm @ 60A, 10V | 5V @ 4mA | 265nC @ 10V | ±20V | 20000pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 500V 30A TO-247 |
4.014 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 30A (Tc) | 10V | 200mOhm @ 15A, 10V | 4.5V @ 250µA | 240nC @ 10V | ±20V | 10200pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 800V 32A TO-264 |
4.140 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 800V | 32A (Tc) | 10V | 270mOhm @ 16A, 10V | 5V @ 8mA | 150nC @ 10V | ±30V | 8800pF @ 25V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 150V 67A ISOPLUS247 |
4.392 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 150V | 67A (Tc) | 10V | 28mOhm @ 35A, 10V | 4V @ 4mA | 180nC @ 10V | ±20V | 3600pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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Microsemi |
MOSFET N-CH 800V 22A D3PAK |
5.454 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 23A (Tc) | 10V | 430mOhm @ 12A, 10V | 5V @ 1mA | 150nC @ 10V | ±30V | 4595pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 800V 13A TO-247 |
4.896 |
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MegaMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 13A (Tc) | 10V | 800mOhm @ 500mA, 10V | 4.5V @ 250µA | 170nC @ 10V | ±20V | 4500pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 1500V 12A TO-247 |
4.770 |
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- | N-Channel | MOSFET (Metal Oxide) | 1500V | 12A (Tc) | 10V | 2Ohm @ 6A, 10V | 4.5V @ 250µA | 106nC @ 10V | ±30V | 3720pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Microsemi |
MOSFET N-CH 800V 34A TO-264 |
3.636 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 34A (Tc) | 10V | 145mOhm @ 22A, 10V | 3.9V @ 2mA | 355nC @ 10V | ±20V | 4510pF @ 25V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 100V 200A PLUS247 |
2.034 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 100V | 200A (Tc) | 10V | 7.5mOhm @ 100A, 10V | 5V @ 8mA | 235nC @ 10V | ±20V | 7600pF @ 25V | - | 830W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 1500V 12A TO-268 |
5.238 |
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- | N-Channel | MOSFET (Metal Oxide) | 1500V | 12A (Tc) | 10V | 2Ohm @ 6A, 10V | 4.5V @ 250µA | 106nC @ 10V | ±30V | 3720pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 200V 56A TO-247 |
3.400 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 200V | 56A (Tc) | 10V | 45mOhm @ 500mA, 10V | 4V @ 1mA | 195nC @ 10V | ±30V | 4860pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |