Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 539/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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IXYS |
MOSFET N-CH 100V 180A TO-263AA |
3.564 |
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GigaMOS™, HiPerFET™, TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 6mOhm @ 50A, 10V | 4V @ 250µA | 185nC @ 10V | ±20V | 10500pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 75V 230A TO-263AA |
5.562 |
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HiPerFET™, TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 75V | 230A (Tc) | 10V | 4.2mOhm @ 50A, 10V | 4V @ 1mA | 178nC @ 10V | - | 10500pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 250V 50A TO-247 |
3.474 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 50A (Tc) | 10V | 60mOhm @ 25A, 10V | 5V @ 1mA | 78nC @ 10V | ±30V | 4000pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 100V 120A TO247 |
2.844 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | 9620pF @ 50V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N CH 75V 195A TO247 |
5.634 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 195A (Tc) | 6V, 10V | 1.8mOhm @ 100A, 10V | 3.7V @ 250µA | 830nC @ 10V | ±20V | 29550pF @ 25V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CHAN 650V 23A POWERPAK |
6.498 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 23A (Tc) | 10V | 158mOhm @ 12A, 10V | 4V @ 250µA | 17nC @ 10V | ±30V | 2780pF @ 100V | - | 202W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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Texas Instruments |
IC MOSFET N-CH 80V TO-220 |
6.192 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 80V | 200A (Ta) | 6V, 10V | 2.3mOhm @ 100A, 10V | 3.2V @ 250µA | 156nC @ 10V | ±20V | 12200pF @ 40V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DDPAK/TO-263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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ON Semiconductor |
MOSFET N-CH 100V 200A D2PAK |
8.946 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 200A (Tc) | 10V | 2.6mOhm @ 27A, 10V | 4V @ 250µA | 118nC @ 10V | ±20V | 8545pF @ 50V | - | 3.8W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 300V 38A TO-247AC |
4.050 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 300V | 38A (Tc) | 10V | 69mOhm @ 24A, 10V | 5V @ 250µA | 125nC @ 10V | ±20V | 5168pF @ 50V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 28A TO-247AC |
5.832 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 28A (Tc) | 10V | 117mOhm @ 14A, 10V | 4V @ 250µA | 146nC @ 10V | ±30V | 3249pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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IXYS |
MOSFET N-CH 800V 12A TO-247 |
6.012 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 800V | 12A (Tc) | 10V | 850mOhm @ 500mA, 10V | 5.5V @ 2.5mA | 51nC @ 10V | ±30V | 2800pF @ 25V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 150V 120A TO-3P |
8.100 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 150V | 120A (Tc) | - | 16mOhm @ 500mA, 10V | - | 150nC @ 10V | - | 4900pF @ 25V | - | - | - | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 300V 60A TO-3P |
2.268 |
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- | N-Channel | MOSFET (Metal Oxide) | 300V | 60A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 250V 96A TO-3P |
8.856 |
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TrenchHV™ | N-Channel | MOSFET (Metal Oxide) | 250V | 96A (Tc) | 10V | 29mOhm @ 500mA, 10V | 5V @ 1mA | 114nC @ 10V | ±30V | 6100pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 200V 98A TO-3P |
2.232 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 98A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 650V 32A TO-220 |
3.690 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 32A (Tc) | 10V | 135mOhm @ 16A, 10V | 5.5V @ 250µA | 54nC @ 10V | ±30V | 2205pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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IXYS |
MOSFET N-CH |
8.892 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 34A (Tc) | 10V | 96mOhm @ 17A, 10V | 5V @ 250µA | 54nC @ 10V | ±30V | 3000pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 20.7A TO-247 |
7.038 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 20.7A (Tc) | 10V | 220mOhm @ 13.1A, 10V | 5V @ 1mA | 124nC @ 10V | ±20V | 2400pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 20A TO-247AD |
7.236 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 200mOhm @ 10A, 10V | 3.5V @ 1.1mA | 45nC @ 10V | ±20V | 1520pF @ 100V | - | - | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXKH) | TO-3P-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 600V 33A TO-247AC |
6.120 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 33A (Tc) | 10V | 98mOhm @ 16.5A, 10V | 4V @ 250µA | 155nC @ 10V | ±30V | 3454pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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IXYS |
MOSFET N-CH 650V 14A TO-220 |
6.210 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 14A (Tc) | 10V | 135mOhm @ 16A, 10V | 5.5V @ 250µA | 54nC @ 10V | ±30V | 2206pF @ 25V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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IXYS |
MOSFET N-CH 600V 24A TO-3P |
6.768 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 175mOhm @ 12A, 10V | 4.5V @ 2.5mA | 47nC @ 10V | ±30V | 1910pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Infineon Technologies |
MOSFET N-CH 250V 64A TO262-3 |
7.938 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 64A (Tc) | 10V | 20mOhm @ 64A, 10V | 4V @ 270µA | 86nC @ 10V | ±20V | 7100pF @ 100V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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IXYS |
MOSFET N-CH 250V 64A TO-3P |
7.740 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 250V | 64A (Tc) | 10V | 49mOhm @ 500mA, 10V | 5V @ 250µA | 105nC @ 10V | ±20V | 3450pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 200V 74A TO-3P |
8.946 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 200V | 74A (Tc) | 10V | 34mOhm @ 37A, 10V | 5V @ 250µA | 107nC @ 10V | ±20V | 3300pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 150V 96A TO-3P |
7.578 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 150V | 96A (Tc) | 10V | 24mOhm @ 500mA, 10V | 5V @ 250µA | 110nC @ 10V | ±20V | 3500pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 1200V 2.4A TO-263 |
6.354 |
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Polar™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 2.4A (Tc) | 10V | 7.5Ohm @ 500mA, 10V | 4.5V @ 250µA | 37nC @ 10V | ±20V | 1207pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 75V 230A TO-263-7 |
5.274 |
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GigaMOS™, HiPerFET™, TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 75V | 230A (Tc) | 10V | 4.2mOhm @ 50A, 10V | 4V @ 1mA | 178nC @ 10V | - | 10500pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 (IXTA..7) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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IXYS |
MOSFET N-CH 600V 30A TO220 |
4.338 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 155mOhm @ 15A, 10V | 4.5V @ 4mA | 56nC @ 10V | ±30V | 2270pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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IXYS |
MOSFET N-CH |
8.748 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 12A (Tc) | 10V | 300mOhm @ 6A, 10V | 4.5V @ 250µA | 19nC @ 10V | ±30V | 960pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |