Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 536/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 150V 83A D2PAK |
7.650 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 83A (Tc) | 10V | 15mOhm @ 33A, 10V | 5V @ 250µA | 107nC @ 10V | ±30V | 4530pF @ 25V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 1000V 3A TO-247 |
6.462 |
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PolarVHV™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 3A (Tc) | 10V | 4.8Ohm @ 1.5A, 10V | 4.5V @ 250µA | 39nC @ 10V | ±20V | 1100pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 200V 1A SAWN ON FOIL |
8.928 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 4V @ 270µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
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Infineon Technologies |
HIGH POWER_LEGACY |
4.230 |
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CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | ±20V | 3240pF @ 100V | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 31.2A TO220 |
2.898 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | ±20V | 3240pF @ 100V | - | 34.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
HIGH POWER_LEGACY |
7.542 |
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CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | ±20V | 3240pF @ 100V | - | 34.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MV POWER MOS |
2.538 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MV POWER MOS |
2.574 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 55V 95A TO-247AC |
4.122 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 95A (Tc) | 10V | 5.3mOhm @ 95A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 5600pF @ 25V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 60V 195A |
3.384 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 4.5V, 10V | 1.95mOhm @ 100A, 10V | 2.4V @ 250µA | 255nC @ 4.5V | ±20V | 15330pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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IXYS |
MOSFET N-CH 600V 7.6A TO220FP |
2.412 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7.6A (Tc) | 10V | 200mOhm @ 10A, 10V | 3.5V @ 1.1mA | 30nC @ 10V | ±20V | 1520pF @ 100V | Super Junction | - | -55°C ~ 150°C (TJ) | Through Hole | TO-220ABFP | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 500V 8A TO-220AB |
2.160 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | 1100pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 900V TO220-3 |
3.078 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 15A (Tc) | 10V | 340mOhm @ 9.2A, 10V | 3.5V @ 1mA | 94nC @ 10V | ±20V | 2400pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Sanken |
MOSFET N-CH 280V 40A TO-3PF |
7.236 |
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- | N-Channel | MOSFET (Metal Oxide) | 280V | 40A (Ta) | 10V | 53mOhm @ 20A, 10V | 4.5V @ 1mA | - | ±30V | 3800pF @ 25V | - | 85W (Tc) | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 100V 200A D2PAK |
2.484 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 200A (Tc) | 6V, 10V | 3mOhm @ 26A, 10V | 4V @ 250µA | 113nC @ 10V | ±20V | 8295pF @ 50V | - | 3.8W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Sanken |
MOSFET N-CH 300V 30A TO-3PF |
8.514 |
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- | N-Channel | MOSFET (Metal Oxide) | 300V | 30A (Ta) | 10V | 65mOhm @ 15A, 10V | 4.5V @ 1mA | - | ±30V | 3800pF @ 25V | - | 85W (Tc) | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 100V 222A TO220F |
3.888 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 222A (Tc) | 10V | 2.3mOhm @ 100A, 10V | 4V @ 700µA | 152nC @ 10V | ±20V | 11180pF @ 50V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Sanken |
MOSFET N-CH 250V 50A TO-3PF |
5.400 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 50A (Ta) | 10V | 43mOhm @ 25A, 10V | 4.5V @ 1mA | - | ±30V | 3800pF @ 25V | - | 85W (Tc) | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 25A TO-220 |
8.046 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 25A (Tc) | 10V | 125mOhm @ 16A, 10V | 3.5V @ 1.1mA | 70nC @ 10V | ±20V | 2500pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 24A TO247AC |
6.714 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122nC @ 10V | ±30V | 2740pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 33A TO263 |
6.048 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 33A (Tc) | 10V | 99mOhm @ 16.5A, 10V | 4V @ 250µA | 150nC @ 10V | ±30V | 3508pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 200V 20A TO-220 |
3.222 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 200V | 20A (Tc) | 10V | 60mOhm @ 25A, 10V | 5V @ 250µA | 70nC @ 10V | ±20V | 2720pF @ 25V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 Isolated Tab | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
MOSFET N-CH 250V 1A SAWN ON FOIL |
6.012 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 4V @ 270µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
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Infineon Technologies |
MOSFET N-CH 150V 105A SUPER247 |
5.490 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 105A (Tc) | 10V | 15mOhm @ 63A, 10V | 5V @ 250µA | 390nC @ 10V | ±30V | 6810pF @ 25V | - | 441W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | SUPER-247™ (TO-274AA) | TO-274AA |
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Infineon Technologies |
TRANSISTOR N-CH |
3.132 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
150V TO263 7L JEDEC GREEN EMC |
6.912 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 3.8A (Tc) | 10V | 6.9mOhm @ 17A, 10V | 4V @ 250µA | 115nC @ 10V | ±20V | 8775pF @ 75V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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ON Semiconductor |
MOSFET N-CH 600V 36A TO220F |
2.610 |
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SupreMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 36A (Tc) | 10V | 90mOhm @ 18A, 10V | 4V @ 250µA | 112nC @ 10V | ±30V | 4785pF @ 100V | - | - | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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IXYS |
MOSFET N-CH 600V 24A TO220 |
6.426 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 175mOhm @ 12A, 10V | 4.5V @ 2.5mA | 47nC @ 10V | ±30V | 1910pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 900V 15A TO-262 |
3.564 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 15A (Tc) | 10V | 340mOhm @ 9.2A, 10V | 3.5V @ 1mA | 94nC @ 10V | ±20V | 2400pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 900V TO-262 |
8.658 |
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