Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 384/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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STMicroelectronics |
MOSFET N-CHANNEL 600V 18A TO247 |
2.448 |
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MDmesh™ M2-EP | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 188mOhm @ 9A, 10V | 4.75V @ 250µA | 29nC @ 10V | ±25V | 1090pF @ 100V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 20A TO247 |
3.510 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 165mOhm @ 10A, 10V | 4V @ 250µA | 34nC @ 10V | ±25V | 1360pF @ 100V | - | 169W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXFH) | TO-247-3 |
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Infineon Technologies |
MOSFET N-CHANNEL 800V 13A TO220 |
5.868 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 13A (Tc) | 10V | 360mOhm @ 5.6A, 10V | 3.5V @ 280µA | 30nC @ 10V | ±20V | 930pF @ 500V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 600V 6.8A TO-220F |
6.804 |
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SupreMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 6.8A (Tc) | 10V | 520mOhm @ 3.4A, 10V | 4V @ 250µA | 35.6nC @ 10V | ±30V | 960pF @ 100V | - | 30.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 600V 13A TO-247 |
3.544 |
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Automotive, AEC-Q101, MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 285mOhm @ 6.5A, 10V | 4V @ 250µA | 35nC @ 10V | ±25V | 1000pF @ 50V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH PPAK 8X8 |
5.616 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 19A (Tc) | 10V | 180mOhm @ 9.5A, 10V | 5V @ 250µA | 33nC @ 10V | ±30V | 1085pF @ 100V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH EF PWR PWRPAK 8X8 |
8.514 |
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EF | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 193mOhm @ 9.5A, 10V | 5V @ 250µA | 32nC @ 10V | ±30V | 1081pF @ 100V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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Rohm Semiconductor |
NCH 650V 15A POWER MOSFET. R651 |
7.722 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 315mOhm @ 6.5A, 10V | 4V @ 430µA | 40nC @ 10V | ±20V | 910pF @ 25V | - | 184W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 650V 15A POWER MOSFET. R651 |
2.304 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 315mOhm @ 6.5A, 10V | 5V @ 430µA | 27.5nC @ 10V | ±20V | 1050pF @ 25V | - | 184W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET |
2.376 |
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MDmesh™ M2-EP | N-Channel | MOSFET (Metal Oxide) | 600V | - | - | - | - | - | - | - | - | - | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
AFSM T6 40V LL NCH |
3.978 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 553.8A (Tc) | 4.5V, 10V | 0.4mOhm @ 50A, 10V | 2.5V @ 250µA | 163nC @ 4.5V | ±20V | 20600pF @ 20V | - | 5W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | 8-DFNW (8.3x8.4) | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 33V 120A TO-220 |
3.060 |
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SAFeFET™ | N-Channel | MOSFET (Metal Oxide) | 33V | 120A (Tc) | 10V | 4.2mOhm @ 40A, 10V | 4V @ 1mA | 110nC @ 10V | ±20V | 4560pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 100V 180A H2PAK-2 |
5.652 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 2.5mOhm @ 60A, 10V | 4.5V @ 250µA | 160nC @ 10V | ±20V | 11550pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 100V TO-220FP |
4.050 |
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DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 100V | 45A (Tc) | 10V | 7mOhm @ 22.5A, 10V | 4.5V @ 250µA | 72nC @ 10V | ±20V | 5117pF @ 50V | - | 30W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
60V N-CHANNEL ALPHASGT TM |
4.806 |
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AlphaSGT™ | N-Channel | MOSFET (Metal Oxide) | 60V | 38.5A (Ta), 140A (Tc) | 6V, 10V | 3.2mOhm @ 20A, 10V | 3.4V @ 250µA | 60nC @ 10V | ±20V | 2870pF @ 30V | - | 8.3W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 40V 47A 8PQFN |
4.068 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 47A (Ta), 200A (Tc) | 4.5V, 10V | 0.85mOhm @ 47A, 10V | 3V @ 250µA | 242nC @ 10V | ±20V | 17500pF @ 20V | - | 2.7W (Ta), 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 650V 29A TO-220FP |
7.416 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 28A (Tc) | 10V | 110mOhm @ 14.5A, 10V | 5V @ 250µA | 70nC @ 10V | ±25V | 2590pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 650V TO-220FP |
6.498 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
FET NCH 650V |
7.578 |
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SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 24A | 10V | 150mOhm @ 12A, 10V | 5V @ 540µA | 43nC @ 10V | ±30V | 1999pF @ 400V | - | 192W | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-3 (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 18A TO-3PF |
5.022 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 190mOhm @ 9A, 10V | 4V @ 250µA | 29nC @ 10V | ±25V | 1060pF @ 100V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | TO-3PF |
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STMicroelectronics |
MOSFET N-CH 600V 12A TO-220AB |
5.670 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 320mOhm @ 6A, 10V | 4V @ 250µA | 19nC @ 10V | ±25V | 700pF @ 100V | - | 110W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
AFSM T6 40V LL NCH |
2.286 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-DFNW (8.3x8.4) | 8-PowerTDFN |
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ON Semiconductor |
AFSM T6 40V SG NCH |
5.094 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 51A (Ta), 430A (Tc) | 10V | 0.67mOhm @ 50A, 10V | 4V @ 250µA | 140nC @ 10V | ±20V | 9281pF @ 25V | - | 3.9W (Ta), 273W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-DFNW (8.3x8.4) | 8-PowerTDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V TO-220 |
6.930 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 19.5A TO-220FP |
5.004 |
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FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 19.5A (Tc) | 10V | 180mOhm @ 10A, 10V | 5V @ 250µA | 70nC @ 10V | ±25V | 2050pF @ 50V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
SUPERFET3 650V FRFET,95MO |
3.420 |
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FRFET®, SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 36A (Tc) | 10V | 95mOhm @ 18A, 10V | 5V @ 860µA | 66nC @ 10V | ±30V | 2930pF @ 400V | - | 272W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK-3 (TO-263-3) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET E SERIES 600V DPAK (TO-25 |
2.754 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 19A (Tc) | 10V | 195mOhm @ 9.5A, 10V | 5V @ 250µA | 32nC @ 10V | ±30V | 1080pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
NCH 650V 20A POWER MOSFET. R652 |
3.942 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 20A (Tc) | 10V | 205mOhm @ 9.5A, 10V | 5V @ 630µA | 40nC @ 10V | ±20V | 1550pF @ 25V | - | 231W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 650V 20A POWER MOSFET. R652 |
2.970 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 20A (Tc) | 10V | 205mOhm @ 9.5A, 10V | 4V @ 630µA | 61nC @ 10V | ±20V | 1400pF @ 25V | - | 231W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N CH 40V 160A I2PAK |
6.678 |
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DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 10V | 2.2mOhm @ 80A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 13800pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |