Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 380/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Rohm Semiconductor |
RD3P08BBD IS A POWER MOSFET WITH |
8.928 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Ta) | 6V, 10V | 11.6mOhm @ 80A, 10V | 4V @ 1mA | 37nC @ 10V | ±20V | 1940pF @ 50V | - | 119W (Ta) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
700V, A MOSTM N-CHANNEL POWER TR |
7.758 |
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aMOS5™ | N-Channel | MOSFET (Metal Oxide) | 700V | 5A (Tc) | 10V | 950mOhm @ 1A, 10V | 4.1V @ 250µA | 10nC @ 10V | ±20V | 461pF @ 100V | - | 56.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak |
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Vishay Siliconix |
MOSFET N-CH 800V 2.9A DPAK |
6.768 |
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E | N-Channel | MOSFET (Metal Oxide) | 800V | 2.9A (Tc) | 10V | 2.9Ohm @ 500mA, 10V | 4V @ 250µA | 10.5nC @ 10V | ±30V | 180pF @ 100V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CHANNEL 800V 7A TO220 |
8.226 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 800V | 7A (Tc) | 10V | 900mOhm @ 3.5A, 10V | 5V @ 100µA | 12nC @ 10V | ±30V | 340pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Rohm Semiconductor |
RS1P600BE IS A POWER MOSFET WITH |
6.084 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 17.5A (Ta), 60A (Tc) | 10V | 9.7mOhm @ 17.5A, 10V | 4V @ 500µA | 33nC @ 10V | ±20V | 2200pF @ 50V | - | 3W (Ta), 35W (Tc) | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CHAN 30V |
2.898 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 82A (Ta), 100A (Tc) | 4.5V, 10V | 0.62mOhm @ 20A, 10V | 2.2V @ 250µA | 188nC @ 10V | +20V, -16V | 9530pF @ 15V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8DC | PowerPAK® SO-8 |
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STMicroelectronics |
MOSFET N-CH 600V TO-220FP |
4.932 |
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MDmesh™ M2-EP | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | - | 4.75V @ 250µA | 22nC @ 10V | - | - | - | - | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Diodes Incorporated |
MOSFET N-CH 950V 2.5A TO220AB |
7.668 |
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- | N-Channel | MOSFET (Metal Oxide) | 950V | 2.5A (Tc) | 10V | 7Ohm @ 1A, 10V | 5V @ 250µA | 7.9nC @ 10V | ±30V | 470pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia |
PSMN1R0-40SSH/SOT1235/LFPAK88 |
7.794 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 325A (Ta) | 10V | 1mOhm @ 25A, 10V | 3.6V @ 1mA | 137nC @ 10V | ±20V | 10322pF @ 25V | Schottky Diode (Body) | 375W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK88 (SOT1235) | SOT-1235 |
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Vishay Siliconix |
MOSFET P-CH 30V PP SO-8 |
8.208 |
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TrenchFET® Gen IV | P-Channel | MOSFET (Metal Oxide) | 30V | 47.9A (Ta), 195A (Tc) | 4.5V, 10V | 1.7mOhm @ 20A, 10V | 2.5V @ 250µA | 260nC @ 10V | +16V, -20V | 10955pF @ 15V | - | 6.35W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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STMicroelectronics |
MOSFET N-CH 620V 7A I2PAK |
6.480 |
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- | N-Channel | MOSFET (Metal Oxide) | 620V | 7A (Tc) | 10V | 1.2Ohm @ 2.9A, 10V | 4.5V @ 50µA | 35nC @ 10V | ±30V | 890pF @ 50V | - | 30W (Tc) | 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
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STMicroelectronics |
MOSFET N-CH 650V TO-220FP |
8.658 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 455mOhm @ 5.5A, 10V | 4V @ 250µA | 29nC @ 10V | ±25V | 800pF @ 50V | - | 25W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 600V 9A I2PAK |
6.948 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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STMicroelectronics |
MOSFET N-CH 600V 13A D2PAK |
4.752 |
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MDmesh™ M2-EP | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | - | 4.75V @ 250µA | 22nC @ 10V | - | - | - | - | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 50A TO220AB |
5.256 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 9mOhm @ 20A, 10V | 2.5V @ 250µA | 72nC @ 10V | ±20V | 3065pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
FET 80V 116A POWER56 |
8.244 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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STMicroelectronics |
MOSFET N-CH 30V 70A D2PAK |
6.390 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 30V | 70A (Tc) | 5V, 10V | 9.5mOhm @ 35A, 10V | 1V @ 250µA | 30nC @ 5V | ±18V | 1440pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET N-CHANNEL 950V ITO220AB |
8.280 |
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- | N-Channel | MOSFET (Metal Oxide) | 950V | - | 10V | 7Ohm @ 1A, 10V | 5V @ 250µA | 7.9nC @ 10V | ±30V | 470pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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STMicroelectronics |
MOSFET N-CH 600V 13A TO220FP |
3.418 |
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MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 295mOhm @ 6A, 10V | 5V @ 250µA | 20nC @ 10V | ±25V | 800pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET NCH 600V 11A POWERFLAT |
2.538 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | - | 4V @ 250µA | 21.5nC @ 10V | ±25V | 791pF @ 100V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 100V 12A PWRFLAT5X6 |
6.156 |
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DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 100V | 46A (Tc) | 10V | 18mOhm @ 6A, 10V | 4.5V @ 250µA | 25nC @ 10V | 20V | 1640pF @ 50V | - | 5W (Ta), 72W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 20V 50A POLARPAK |
5.940 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 50A (Tc) | 4.5V, 10V | 3.4mOhm @ 18.3A, 10V | 3V @ 250µA | 78nC @ 10V | ±20V | 4200pF @ 10V | - | 5.2W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (S) | 10-PolarPAK® (S) |
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ON Semiconductor |
MOSFET N-CH 600V 20.2A POWER88 |
7.002 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 199mOhm @ 10A, 10V | 3.5V @ 250µA | 74nC @ 10V | ±20V | 2950pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power88 | 4-PowerTSFN |
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Rohm Semiconductor |
R6009JNJ IS A POWER MOSFET WITH |
5.022 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 15V | 585mOhm @ 4.5A, 15V | 7V @ 1.38mA | 22nC @ 15V | ±30V | 645pF @ 100V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | LPTS (D2PAK) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 620V 2.2A IPAK |
4.572 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 620V | 2.2A (Tc) | 10V | 3.6Ohm @ 1.1A, 10V | 4.5V @ 50µA | 15nC @ 10V | ±30V | 340pF @ 50V | - | 45W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CH 650V I2PAK-FP |
7.038 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
T6 40V LL LFPAK |
7.110 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Ta), 330A (Tc) | 4.5V, 10V | 0.82mOhm @ 50A, 10V | 2V @ 190µA | 143nC @ 10V | ±20V | 8862pF @ 25V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-LFPAK | 8-PowerSMD, Gull Wing |
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ON Semiconductor |
T6 60V LL LFPAK |
3.996 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 38A (Ta), 250A (Tc) | 4.5V, 10V | 1.36mOhm @ 50A, 10V | 2V @ 250µA | 91nC @ 10V | ±20V | 6660pF @ 25V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-LFPAK | 8-PowerSMD, Gull Wing |
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Vishay Siliconix |
MOSFET N-CHAN 150V |
6.984 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 64.6A (Ta), 56.7A (Tc) | 7.5V, 10V | 17.7mOhm @ 20A, 10V | 4.5V @ 250µA | 41nC @ 10V | ±20V | 1516pF @ 75V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8DC | PowerPAK® SO-8 |
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STMicroelectronics |
MOSFET N-CH 60V 120A POWERFLAT |
3.024 |
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Automotive, AEC-Q101, STripFET™ F7 | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 1.4mOhm @ 60A, 10V | 4V @ 250µA | 98nC @ 10V | ±20V | 6500pF @ 25V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |