Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 379/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STMicroelectronics |
MOSFET N-CH 120V 100A POWERFLAT |
6.804 |
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STripFET™ F7 | N-Channel | MOSFET (Metal Oxide) | 120V | 100A (Tc) | 10V | 7.5mOhm @ 9A, 10V | 4.5V @ 250µA | 46nC @ 10V | ±20V | 3300pF @ 60V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 120V 40A TO-220 |
3.852 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 120V | 40A (Tc) | 10V | 32mOhm @ 20A, 10V | 4V @ 250µA | 80nC @ 10V | ±20V | 1880pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
SUPERFET3 650V PQFN88 |
8.100 |
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SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 17A (Tc) | 10V | 180mOhm @ 8.5A, 10V | 4.5V @ 1.8mA | 33nC @ 10V | ±30V | 1350pF @ 400V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power88 | 4-PowerTSFN |
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STMicroelectronics |
MOSFET N-CH 620V 7A TO-220 |
8.136 |
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- | N-Channel | MOSFET (Metal Oxide) | 620V | 7A (Tc) | 10V | 1.2Ohm @ 2.8A, 10V | 4.5V @ 50µA | 35nC @ 10V | ±30V | 890pF @ 50V | - | 90W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
100V N-CHANNEL ALPHASGT TM |
6.570 |
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AlphaSGT™ | N-Channel | MOSFET (Metal Oxide) | 100V | 16.5A (Ta), 58A (Tc) | 4.5V, 10V | 11mOhm @ 20A, 10V | 2.6V @ 250µA | 35nC @ 10V | ±20V | 1725pF @ 50V | - | 6.2W (Ta), 73W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251B | TO-251-3 Stub Leads, IPak |
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Vishay Siliconix |
MOSFET N-CHAN 25V PPAK SO-8DC |
7.434 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 25V | 79A (Ta), 100A (Tc) | 4.5V, 10V | 0.67mOhm @ 20A, 10V | 2.1V @ 250µA | 170nC @ 10V | +20V, -16V | 8150pF @ 10V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8DC | PowerPAK® SO-8 |
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Infineon Technologies |
TRENCH <= 40V |
3.510 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 40A (Ta), 100A (Tc) | 4.5V, 10V | 1mOhm @ 50A, 10V | 2.3V @ 250µA | 67nC @ 4.5V | ±20V | 4600pF @ 20V | - | 3W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CHAN 100V POWERPAK SO-8 |
2.628 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 100V | 18.3A (Ta), 79A (Tc) | 7.5V, 10V | 6.4mOhm @ 15A, 10V | 3.5V @ 250µA | 84nC @ 10V | ±20V | 4230pF @ 50V | - | 5.4W (Ta), 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 25V 60A POLARPAK |
2.862 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 60A (Tc) | 4.5V, 10V | 1.4mOhm @ 20A, 10V | 2.2V @ 250µA | 145nC @ 10V | ±20V | 6400pF @ 12.5V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (L) | 10-PolarPAK® (L) |
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STMicroelectronics |
MOSFET N-CH 800V 4.5A I2PAK |
3.436 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 4.5A (Tc) | 10V | 1.6Ohm @ 2A, 10V | 5V @ 100µA | 7.5nC @ 10V | 30V | 255pF @ 100V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |
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STMicroelectronics |
MOSFET N-CHANNEL 600V 13A TO220 |
5.868 |
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MDmesh™ M2-EP | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 278mOhm @ 6.5A, 10V | 4.75V @ 250µA | 21.7nC @ 10V | ±25V | 787pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Rohm Semiconductor |
NCH 600V 6A POWER MOSFET. R6006 |
4.536 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 15V | 936mOhm @ 3A, 15V | 7V @ 800µA | 15.5nC @ 15V | ±30V | 410pF @ 100V | - | 43W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-2 Full Pack |
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STMicroelectronics |
MOSFET N-CHANNEL 800V 8A DPAK |
8.478 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 630mOhm @ 4A, 10V | 5V @ 100µA | 15nC @ 10V | ±30V | 427pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 600V TO-220FP |
4.230 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET N-CHAN 40V PPSO-8DC |
6.840 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 40V | 64.6A (Ta), 100A (Tc) | 4.5V, 10V | 0.88mOhm @ 20A, 10V | 2.3V @ 250µA | 165nC @ 10V | +20V, -16V | 9100pF @ 20V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8DC | PowerPAK® SO-8 |
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Diodes Incorporated |
MOSFET N-CH 900V 2.5A TO220AB |
6.588 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 2.5A (Tc) | 10V | 7Ohm @ 1A, 10V | 5V @ 250µA | 7.9nC @ 10V | ±30V | 470pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CHANNEL 600V 13A TO220 |
5.382 |
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MDmesh™ M2-EP | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | - | - | - | - | - | - | 110W (Tc) | - | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 4VSON |
6.588 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 13A (Tc) | 10V | 285mOhm @ 3.8A, 10V | 4V @ 190µA | 18nC @ 10V | ±20V | 761pF @ 400V | - | 59W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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STMicroelectronics |
MOSFET N-CH 100V 80A DPAK |
4.680 |
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Automotive, AEC-Q101, STripFET™ F7 | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 4.5V, 10V | 9mOhm @ 40A, 10V | 2.5V @ 250µA | 73nC @ 10V | ±20V | 4000pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 40V PWRFLAT 8X8 |
7.578 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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STMicroelectronics |
MOSFET N-CH 800V 7A POWERFLAT |
6.606 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 800V | 7A (Tc) | 10V | - | - | - | - | - | - | 110W (Tc) | - | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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Vishay Siliconix |
AUTOMOTIVE N-CHANNEL 250 V (D-S) |
4.356 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 11.5A (Tc) | 7.5V, 10V | 162mOhm @ 12A, 10V | 3.5V @ 250µA | 16nC @ 10V | ±20V | 785pF @ 25V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 40V 100A TO-263 |
6.516 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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STMicroelectronics |
MOSFET N-CH 55V 80A D2PAK |
8.136 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 8mOhm @ 40A, 10V | 4V @ 250µA | 142nC @ 10V | ±20V | 5300pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 40V 120A H2PAK-2 |
3.418 |
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STripFET™ F6 | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 2.4mOhm @ 60A, 10V | 4.5V @ 250µA | 130nC @ 10V | ±20V | 7735pF @ 25V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
R6007JNJ IS A POWER MOSFET WITH |
6.228 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 15V | 780mOhm @ 3.5A, 15V | 7V @ 1mA | 17.5nC @ 15V | ±30V | 475pF @ 100V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | LPTS (D2PAK) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 2.5A TO-220SIS |
6.498 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 2.5A (Ta) | 10V | 2.8Ohm @ 1.3A, 10V | 4.4V @ 1mA | 9nC @ 10V | ±30V | 380pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 40V 80A TO-220 |
5.868 |
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STripFET™ III | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 6.2mOhm @ 40A, 10V | 4V @ 250µA | 54nC @ 10V | ±20V | 2200pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Rohm Semiconductor |
NCH 600V 11A POWER MOSFET. POWE |
3.366 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 390mOhm @ 3.8A, 10V | 5V @ 1mA | 22nC @ 10V | ±20V | 740pF @ 25V | - | 124W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
NCH 600V 11A POWER MOSFET. POWE |
3.096 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 390mOhm @ 3.8A, 10V | 4V @ 1mA | 32nC @ 10V | ±20V | 670pF @ 25V | - | 124W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |