Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 297/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STMicroelectronics |
N-CHANNEL 600 V, 0.032 OHM TYP., |
7.704 |
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MDmesh™ DM6 | N-Channel | MOSFET (Metal Oxide) | 600V | 72A | - | - | - | - | - | - | - | - | - | Through Hole | TO-247 Long Leads | TO-247-3 |
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STMicroelectronics |
N-CHANNEL 600 V, 0.037OHM TYP., |
8.568 |
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MDmesh™ DM6 | N-Channel | MOSFET (Metal Oxide) | 600V | 62A | - | - | - | - | - | - | - | - | - | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
N-CHANNEL 600 V, 0.037 OHM TYP., |
6.102 |
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MDmesh™ DM6 | N-Channel | MOSFET (Metal Oxide) | 600V | 62A | - | - | - | - | - | - | - | - | - | Through Hole | TO-247 Long Leads | TO-247-3 |
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STMicroelectronics |
N-CHANNEL 600 V 32 MOHM TYP. 72 |
8.712 |
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MDmesh™ M6 | N-Channel | MOSFET (Metal Oxide) | 600V | 72A (Tc) | 10V | 36mOhm @ 36A, 10V | 4.75V @ 250µA | 106nC @ 10V | ±25V | 4850pF @ 100V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
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STMicroelectronics |
N-CHANNEL 600 V 32 MOHM TYP. 72 |
6.540 |
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MDmesh™ M6 | N-Channel | MOSFET (Metal Oxide) | 600V | 72A (Tc) | 10V | 36mOhm @ 36A, 10V | 4.75V @ 250µA | 106nC @ 10V | ±25V | 4850pF @ 100V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
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Microsemi |
MOSFET N-CH 600V 34A TO-247 |
6.678 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 36A (Tc) | 10V | 210mOhm @ 17A, 10V | 5V @ 1mA | 165nC @ 10V | ±30V | 6640pF @ 25V | - | 624W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 1000V 37A T-MAX |
452 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 37A (Tc) | 10V | 330mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | ±30V | 9835pF @ 25V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 1000V 14A TO-247 |
4.032 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 1000V | 14A (Tc) | 10V | 780mOhm @ 7A, 10V | 5V @ 1mA | 95nC @ 10V | ±30V | 2525pF @ 25V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 1200V 29A TO264 |
5.958 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 29A (Tc) | 10V | 530mOhm @ 14A, 10V | 5V @ 2.5mA | 300nC @ 10V | ±30V | 9670pF @ 25V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 600V 94A TO264 |
6.606 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 94A (Tc) | 10V | 35mOhm @ 60A, 10V | 3.9V @ 5.4mA | 640nC @ 10V | ±20V | 13600pF @ 25V | - | 833W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 264 MAX™ [L2] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 500V 41A SOT-227 |
7.938 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 41A (Tc) | 10V | 100mOhm @ 23A, 10V | 5V @ 2.5mA | 96nC @ 10V | ±30V | 4360pF @ 25V | - | 378W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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IXYS-RF |
MOSFET N-CH 500V 55A SOT227B |
223 |
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HiPerRF™ | N-Channel | MOSFET (Metal Oxide) | 500V | 55A (Tc) | 10V | 85mOhm @ 27.5A, 10V | 5.5V @ 8mA | 195nC @ 10V | ±20V | 6700pF @ 25V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 800V 33A SOT-227 |
5.166 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 800V | 33A (Tc) | 10V | 200mOhm @ 16.5A, 10V | 5V @ 2.5mA | 195nC @ 10V | ±30V | 5200pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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GeneSiC Semiconductor |
TRANS SJT 100V 9A |
6.156 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 100V | 9A (Tc) | - | 240mOhm @ 5A | - | - | - | - | - | 20W (Tc) | -55°C ~ 225°C (TJ) | Through Hole | TO-46 | TO-46-3 |
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GeneSiC Semiconductor |
TRANS SJT 300V 9A |
4.752 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 300V | 9A (Tc) | - | 240mOhm @ 5A | - | - | - | - | - | 20W (Tc) | -55°C ~ 225°C (TJ) | Through Hole | TO-46 | TO-46-3 |
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Infineon Technologies |
MOSFET COOLMOS 700V TO251-3 |
8.016 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 4.5A (Tc) | 10V | 1.2Ohm @ 900mA, 10V | 3.5V @ 40µA | 4.8nC @ 400V | ±16V | 174pF @ 400V | - | 25W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET TO251-3 |
9.936 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 3A | 10V | 2Ohm @ 500mA, 10V | 3.5V @ 30µA | 3.8nC @ 400V | ±16V | 130pF @ 400V | - | 17.6W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3-347 | TO-251-3 Stub Leads, IPak |
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Texas Instruments |
MOSFET N-CHANNEL 60V 50A 8VSON |
15.924 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Ta) | 4.5V, 10V | 9.8mOhm @ 14A, 10V | 2.3V @ 250µA | 11.1nC @ 4.5V | ±20V | 1770pF @ 30V | - | 3.1W (Ta), 77W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH TO220-3 |
7.740 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 6A (Tc) | 10V | 900mOhm @ 1.1A, 10V | 3.5V @ 60µA | 6.8nC @ 400V | ±16V | 211pF @ 400V | - | 20.5W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO- |
8.304 |
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U-MOSIX | N-Channel | MOSFET (Metal Oxide) | 600V | 3.7A (Ta) | 10V | 1.9Ohm @ 1.9A, 10V | 4V @ 400µA | 14nC @ 10V | ±30V | 490pF @ 300V | - | 30W (Tc) | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 450V 1.8A IPAK |
20.172 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 450V | 1.8A (Tc) | 10V | 3.8Ohm @ 500mA, 10V | 4.5V @ 50µA | 6nC @ 10V | ±30V | 150pF @ 25V | - | 27W (Tc) | - | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET COOLMOS 700V TO251-3 |
8.400 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 6.5A (Tc) | 10V | 750mOhm @ 1.4A, 10V | 3.5V @ 70µA | 8.3nC @ 10V | ±16V | 306pF @ 400V | - | 20.8W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH TO220-3 |
10.200 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 6.5A (Tc) | 10V | 750mOhm @ 1.4A, 10V | 3.5V @ 70µA | 8.3nC @ 400V | ±16V | 306pF @ 400V | - | 21.2W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 525V 4.4A TO-220FP |
16.896 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 525V | 4.4A (Tc) | 10V | 1.5Ohm @ 2.2A, 10V | 4.5V @ 50µA | 17nC @ 10V | ±30V | 545pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET COOLMOS 700V TO251-3 |
11.280 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 6A (Tc) | 10V | 900mOhm @ 1.1A, 10V | 3.5V @ 60µA | 6.8nC @ 10V | ±16V | 211pF @ 400V | - | 17.9W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET P-CH 60V 10A IPAK |
14.412 |
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STripFET™ II | P-Channel | MOSFET (Metal Oxide) | 60V | 10A (Tc) | 10V | 200mOhm @ 5A, 10V | 4V @ 250µA | 21nC @ 10V | ±20V | 850pF @ 25V | - | 40W (Tc) | 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 100V 43.5A D2PAK |
17.700 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 43.5A (Tc) | 10V | 39mOhm @ 21.75A, 10V | 4V @ 250µA | 62nC @ 10V | ±25V | 1800pF @ 25V | - | 3.75W (Ta), 146W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET P-CH 60V 11.4A TO-220 |
16.884 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 11.4A (Tc) | 10V | 175mOhm @ 5.7A, 10V | 4V @ 250µA | 17nC @ 10V | ±25V | 550pF @ 25V | - | 53W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 14A DPAK |
6.852 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Tc) | 10V | 100mOhm @ 8.4A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 640pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 200V 3.8A TO-220 |
10.392 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 3.8A (Tc) | 5V, 10V | 1.35Ohm @ 1.9A, 10V | 2V @ 250µA | 5.2nC @ 5V | ±20V | 310pF @ 25V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |