Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 296/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STMicroelectronics |
NCHANNEL 600 V 105 MOHM TYP. 26 |
6.120 |
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MDmesh™ M6 | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 125mOhm @ 12.5A, 10V | 4.75V @ 250µA | 33.4nC @ 10V | ±25V | 1515pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 600V 21A TO247AC |
5.382 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 86nC @ 10V | ±30V | 1920pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 24A TO3P |
7.686 |
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PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 500V | 24A (Tc) | 10V | 270mOhm @ 12A, 10V | 4.5V @ 250µA | 48nC @ 10V | ±30V | 2890pF @ 25V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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STMicroelectronics |
NCHANNEL 600 V 105 MOHM TYP. 26 |
6.948 |
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MDmesh™ M6 | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 125mOhm @ 12.5A, 10V | 4.75V @ 250µA | 33.4nC @ 10V | ±25V | 1515pF @ 100V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 12A TO-220FM |
18.780 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 510mOhm @ 6A, 10V | 5V @ 1mA | 35nC @ 10V | ±30V | 1300pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CHANNEL 800V 15A TO220 |
7.056 |
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E | N-Channel | MOSFET (Metal Oxide) | 800V | 15A (Tc) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 250µA | 122nC @ 10V | ±30V | 2408pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 800V 15A TO247AC |
7.056 |
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E | N-Channel | MOSFET (Metal Oxide) | 800V | 15A (Tc) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 250µA | 122nC @ 10V | ±30V | 2408pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 25A TO3PF |
6.156 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 150mOhm @ 12.5A, 10V | 4.5V @ 1mA | 88nC @ 10V | ±20V | 3250pF @ 10V | - | 150W (Tc) | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 30A TO247 |
6.360 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 130mOhm @ 14.5A, 10V | 4V @ 1mA | 85nC @ 10V | ±20V | 2100pF @ 25V | - | 120W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 27.6A TO247 |
7.092 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 27.6A (Ta) | 10V | 110mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 75nC @ 10V | ±30V | 3000pF @ 300V | - | 230W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 24A TO247 |
7.452 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 165mOhm @ 11.3A, 10V | 4V @ 1mA | 70nC @ 10V | ±20V | 1650pF @ 25V | - | 120W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 100V 180A TO-262 |
8.406 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 4.5V, 10V | 4.3mOhm @ 110A, 10V | 2.5V @ 250µA | 130nC @ 4.5V | ±16V | 11360pF @ 50V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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STMicroelectronics |
MOSFET N-CH 650V 22A TO-220FP |
6.576 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 22A (Tc) | 10V | 148mOhm @ 11A, 10V | 5V @ 250µA | 45nC @ 10V | ±25V | 816pF @ 100V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
N-CHANNEL 600 V 0.085 OHM TYP. 3 |
6.756 |
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MDmesh™ M6 | N-Channel | MOSFET (Metal Oxide) | 600V | 36A (Tc) | 10V | 80mOhm @ 18A, 10V | 4.75V @ 250µA | - | ±25V | - | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 35A TO-220 |
4.392 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 35A (Ta) | 10V | 80mOhm @ 17.5A, 10V | 3.5V @ 2.1mA | 100nC @ 10V | ±30V | 4100pF @ 300V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 60V 120A TO220 |
6.024 |
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DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 3mOhm @ 60A, 10V | 4V @ 250µA | 183nC @ 10V | ±20V | 11400pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET |
6.372 |
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MDmesh™ DM6 | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 99mOhm @ 15A, 10V | 4.75V @ 250µA | 44nC @ 10V | ±25V | 1920pF @ 100V | - | 210W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 950V 12A TO247 |
6.132 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 950V | 12A (Tc) | 10V | 500mOhm @ 6A, 10V | 5V @ 100µA | 40nC @ 10V | ±30V | 900pF @ 100V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 35A TO-247 |
7.326 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 35A (Ta) | 10V | 80mOhm @ 17.5A, 10V | 3.5V @ 2.1mA | 100nC @ 10V | ±30V | 4100pF @ 300V | - | 270W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET |
5.958 |
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MDmesh™ DM6 | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 99mOhm @ 15A, 10V | 4.75V @ 250µA | 44nC @ 10V | ±25V | 1920pF @ 100V | - | 210W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 30A TO247-4L |
6.072 |
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MDmesh™ M5 | N-Channel | MOSFET (Metal Oxide) | 650V | 30A (Tc) | 10V | 95mOhm @ 15A, 10V | 5V @ 250µA | 71nC @ 10V | ±25V | 3000pF @ 100V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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STMicroelectronics |
N-CHANNEL 600 V, 0.084 OHM TYP., |
8.226 |
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MDmesh™ DM6 | N-Channel | MOSFET (Metal Oxide) | 600V | 38A | - | - | - | - | - | - | - | - | - | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
N-CHANNEL 600 V, 0.084 OHM TYP., |
8.982 |
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MDmesh™ DM6 | N-Channel | MOSFET (Metal Oxide) | 600V | 38A | - | - | - | - | - | - | - | - | - | Through Hole | TO-247 Long Leads | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 38.8A TO-3P |
5.058 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 38.8A (Ta) | 10V | 65mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 110nC @ 10V | ±30V | 4100pF @ 300V | Super Junction | 270W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 850V 30A TO247AD |
8.640 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 850V | 30A (Tc) | 10V | 220mOhm @ 500mA, 10V | 5.5V @ 2.5mA | 68nC @ 10V | ±30V | 2460pF @ 25V | - | 695W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Microsemi |
MOSFET N-CH 600V 53A TO-247 |
8.928 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 53A (Tc) | 10V | 70mOhm @ 25.8A, 10V | 3.5V @ 1.72mA | 154nC @ 10V | ±20V | 4020pF @ 25V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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IXYS |
MOSFET N-CH 250V 120A TO247 |
6.534 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 120A (Tc) | 10V | 12mOhm @ 60A, 10V | 4.5V @ 4mA | 122nC @ 10V | ±20V | 7870pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET NCH 850V 40A TO247 |
7.110 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 850V | 40A (Tc) | 10V | 145mOhm @ 500mA, 10V | 5.5V @ 4mA | 98nC @ 10V | ±30V | 3700pF @ 25V | - | 860W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET P-CH 200V 30A ISOPLUS247 |
8.406 |
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PolarP™ | P-Channel | MOSFET (Metal Oxide) | 200V | 30A (Tc) | 10V | 93mOhm @ 24A, 10V | 4.5V @ 250µA | 103nC @ 10V | ±20V | 5400pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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Microsemi |
MOSFET N-CH 800V 34A T-MAX |
5.886 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 34A (Tc) | 10V | 145mOhm @ 22A, 10V | 3.9V @ 2mA | 355nC @ 10V | ±20V | 4510pF @ 25V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |