Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 290/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Microsemi |
MOSFET N-CH 1000V 41A SOT-227 |
6.084 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 42A (Tc) | 10V | 210mOhm @ 33A, 10V | 5V @ 5mA | 570nC @ 10V | ±30V | 18500pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 500V 88A SOT-227 |
6.912 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 500V | 88A (Tc) | 10V | 38mOhm @ 44A, 10V | 5V @ 5mA | 270nC @ 10V | ±30V | 12000pF @ 25V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 1000V 37A SOT-227 |
8.910 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 1000V | 37A (Tc) | 10V | 210mOhm @ 18.5A, 10V | 5V @ 5mA | 395nC @ 10V | ±30V | 9750pF @ 25V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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STMicroelectronics |
MOSFET N-CH 500V 2.3A TO220AB |
19.092 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 500V | 2.3A (Tc) | 10V | 3.3Ohm @ 1.15A, 10V | 4.5V @ 50µA | 15nC @ 10V | ±30V | 280pF @ 25V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Texas Instruments |
40V N-CHANNEL NEXFET POWER MOSF |
16.440 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 124A (Tc) | 4.5V, 10V | 5.3mOhm @ 19A, 10V | 2.4V @ 250µA | 61nC @ 10V | ±20V | 4280pF @ 20V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 16A I-PAK |
6.552 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 16A (Tc) | 10V | 115mOhm @ 10A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 640pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 4A ITO220 |
16.752 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 2.5Ohm @ 2A, 10V | 4.5V @ 250µA | 14.5nC @ 10V | ±30V | 500pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
MOSFET N-CHANNEL 600V 6A TO220 |
7.704 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4V @ 80µA | 9nC @ 10V | ±20V | 363pF @ 400V | - | 21W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 650V 4A ITO220 |
20.496 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 4A (Tc) | 10V | 3.37Ohm @ 2A, 10V | 4.5V @ 250µA | 13.46nC @ 10V | ±30V | 549pF @ 25V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Rohm Semiconductor |
MOSFET N-CH 500V 5A TO220FM |
7.980 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.5Ohm @ 2.5A, 10V | 4.4V @ 1mA | 14nC @ 10V | ±30V | 600pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V TO-220-3 |
6.828 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 650mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5nC @ 10V | ±20V | 440pF @ 100V | - | 28W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 60V 43A TO220-3-31 |
8.724 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 43A (Tc) | 10V | 9.3mOhm @ 40A, 10V | 4V @ 34µA | 48nC @ 10V | ±20V | 3900pF @ 30V | - | 33W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-31 Full Pack | TO-220-3 Full Pack |
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Nexperia |
MOSFET N-CH 110V 27.6A TO220AB |
18.540 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 110V | 27.6A (Tc) | 10V | 50mOhm @ 14A, 10V | 4V @ 1mA | 30nC @ 10V | ±20V | 1240pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 500V 5A ITO220S |
19.008 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.38Ohm @ 1.7A, 10V | 4.5V @ 250µA | 15nC @ 10V | ±30V | 586pF @ 50V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 500V 11.5A D2PAK |
18.732 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 11.5A (Tc) | 10V | 650mOhm @ 6A, 10V | 5V @ 250µA | 30nC @ 10V | ±30V | 1315pF @ 25V | - | 165W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 7A ITO220S |
18.192 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 1.2Ohm @ 2A, 10V | 4.5V @ 250µA | 24nC @ 10V | ±30V | 1169pF @ 50V | - | 44.6W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO220-3 |
14.328 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4.1mOhm @ 80A, 10V | 4V @ 45µA | 56nC @ 10V | ±20V | 4500pF @ 20V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N CH 100V 62A TO220AB |
16.200 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 62A (Tc) | 10V | 13.5mOhm @ 37A, 10V | 4V @ 100µA | 87nC @ 10V | ±20V | 3180pF @ 50V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET |
13.758 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 19.5nC @ 10V | ±25V | 718pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 500V 7A TO220 |
10.140 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 7A (Tc) | 10V | 1.3Ohm @ 3.5A, 10V | 4V @ 1mA | 15nC @ 10V | ±30V | 450pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 500V TO-220AB-3 |
7.824 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4A, 10V | 5V @ 250µA | 18nC @ 10V | ±25V | 735pF @ 25V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 500V 7A TO220 |
9.348 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 7A (Ta) | 10V | 1.05Ohm @ 3.5A, 10V | 4.5V @ 1mA | 13nC @ 10V | ±30V | 500pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
20.556 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 7.7A (Tc) | 4V, 5V | 270mOhm @ 4.6A, 5V | 2V @ 250µA | 12nC @ 5V | ±10V | 490pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 200V 0.56A 4-DIP |
14.016 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 560mA (Ta) | 10V | 1.5Ohm @ 340mA, 10V | 4V @ 250µA | 15nC @ 10V | ±20V | 340pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Microchip Technology |
MOSFET P-CH 350V 0.086A TO92-3 |
21.408 |
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- | P-Channel | MOSFET (Metal Oxide) | 350V | 86mA (Tj) | 4.5V, 10V | 25Ohm @ 100mA, 10V | 2.4V @ 1mA | - | ±20V | 125pF @ 25V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Infineon Technologies |
MOSFET N-CH 800V 4.5A TO220-3 |
6.384 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 4.5A (Tc) | 10V | 1.2Ohm @ 1.7A, 10V | 3.5V @ 80µA | 11nC @ 10V | ±20V | 300pF @ 500V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 7A TO220SIS |
8.064 |
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DTMOSV | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 560mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | ±30V | 380pF @ 300V | - | 30W | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 650V 10A ITO220S |
20.148 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 10A (Tc) | 10V | 900mOhm @ 2A, 10V | 4.5V @ 250µA | 34nC @ 10V | ±30V | 1650pF @ 50V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 500V 8.7A TO220AB |
19.968 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 8.7A (Tc) | 10V | 850mOhm @ 4A, 10V | 5V @ 250µA | 30nC @ 10V | ±30V | 527pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 500V 8A TO220FM |
10.908 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4A, 10V | 4V @ 1mA | 23nC @ 10V | ±30V | 1120pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |