Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 242/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Nexperia |
MOSFET N-CH 80V 120A D2PAK |
20.592 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 3.5mOhm @ 25A, 10V | 4V @ 1mA | 111nC @ 10V | ±20V | 8161pF @ 40V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 140A DPAK |
93.102 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 140A (Tc) | 4.5V, 10V | 4.5mOhm @ 15A, 10V | 2.3V @ 250µA | 50nC @ 4.5V | ±20V | 4010pF @ 15V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 150V 13A POWER33 |
3.924 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 150V | 3.2A (Ta), 13A (Tc) | 6V, 10V | 107mOhm @ 3A, 10V | 4V @ 250µA | 32nC @ 10V | ±25V | 2045pF @ 75V | - | 2.3W (Ta), 62W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerWDFN |
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STMicroelectronics |
MOSFET N-CH 30V 80A DPAK |
6.048 |
|
DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 10V | 3mOhm @ 40A, 10V | 4V @ 250µA | 62nC @ 10V | ±20V | 3650pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 200V 3.6A DPAK |
6.336 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 3.6A (Tc) | 10V | 1.5Ohm @ 2.2A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 340pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 80V 30A LFPAK |
4.374 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 30A (Ta) | 10V | 11mOhm @ 15A, 10V | - | 35nC @ 10V | ±20V | 2550pF @ 10V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Rohm Semiconductor |
R6006JNJ IS A POWER MOSFET WITH |
20.352 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 15V | 936mOhm @ 3A, 15V | 7V @ 800µA | 15.5nC @ 15V | ±30V | 410pF @ 100V | - | 86W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | LPTS (D2PAK) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 40V 27A POWER33 |
8.586 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 27A (Ta), 108A (Tc) | 4.5V, 10V | 2.5mOhm @ 27A, 10V | 3V @ 250µA | 60nC @ 10V | ±20V | 3965pF @ 20V | - | 2.9W (Ta), 56W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Dual Cool ™ 33 | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 80V 120A |
6.138 |
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STripFET™ F7 | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 4.4mOhm @ 11.5A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 4570pF @ 25V | - | 4.8W (Ta), 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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Texas Instruments |
MOSFET N-CH 40V 300A 8VSON |
8.370 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 300A (Tc) | 4.5V, 10V | 0.96mOhm @ 32A, 10V | 2.3V @ 250µA | 153nC @ 10V | ±20V | 11400pF @ 20V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Rohm Semiconductor |
MOSFET N-CH 60V 40A LTPS |
23.952 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 40A (Ta) | 10V | 16mOhm @ 40A, 10V | 3V @ 1mA | 52nC @ 10V | ±20V | 2400pF @ 10V | - | 50W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
N-CHANNEL 900 V, 2.1 OHM TYP., 3 |
3.544 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 900V | 6A (Tc) | 10V | 1.1Ohm @ 3A, 10V | 5V @ 100µA | - | ±30V | - | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
TRENCH 6 40V SL NFET |
6.138 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | LFPAK4 (5x6) | SC-100, SOT-669 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 200V 33A SOP8 |
8.406 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 200V | 33A (Ta) | 10V | 29mOhm @ 16.5A, 10V | 4V @ 1mA | 22nC @ 10V | ±20V | 2200pF @ 100V | - | 78W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 55V 75A TO-262 |
18.438 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4.9mOhm @ 75A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 4780pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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STMicroelectronics |
NCHANNEL 600V M6 POWER MOSFET |
7.020 |
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MDmesh™ | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PowerFlat™ (5x6) HV | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 600V 4.8A PWRFLAT56 |
3.454 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 4.8A (Tc) | 10V | 860mOhm @ 2.4A, 10V | 4V @ 250µA | 10nC @ 10V | ±25V | 320pF @ 100V | - | 48W (Tc) | 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) HV | 8-PowerVDFN |
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Rohm Semiconductor |
MOSFET N-CH 600V 6A CPT |
3.978 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 1.2Ohm @ 3A, 10V | 4.5V @ 1mA | 15nC @ 10V | ±30V | 460pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 60V 130A F7 8PWRFLAT |
4.302 |
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STripFET™ F7 | N-Channel | MOSFET (Metal Oxide) | 60V | 130A (Tc) | 10V | 3.5mOhm @ 13A, 10V | 4V @ 250µA | 42nC @ 10V | ±20V | 2600pF @ 25V | - | 4.8W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 75V 140A TO-220AB |
14.892 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 140A (Tc) | 10V | 7mOhm @ 82A, 10V | 4V @ 250µA | 220nC @ 10V | ±20V | 5310pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 30V 8-VSON |
7.560 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 34A (Ta), 100A (Tc) | 4.5V, 10V | 1.4mOhm @ 40A, 10V | 1.65V @ 250µA | 39nC @ 4.5V | ±20V | 7020pF @ 15V | - | 3.1W (Ta), 191W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 100V 95A POWERPAKSO |
6.750 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 100V | 95A (Tc) | 7.5V, 10V | 4.8mOhm @ 20A, 10V | 3.4V @ 250µA | 83nC @ 7.5V | ±20V | 5400pF @ 50V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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STMicroelectronics |
MOSFET N-CH 100V 45A DPAK |
5.706 |
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DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 100V | 45A (Tc) | 10V | 18mOhm @ 22.5A, 10V | 4.5V @ 250µA | 25nC @ 10V | 20V | 1640pF @ 50V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 30V 60A 5-LFPAK |
2.934 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Ta) | 4.5V, 10V | 2.8mOhm @ 30A, 10V | - | 32nC @ 4.5V | +16V, -12V | 5000pF @ 10V | - | 65W (Tc) | 150°C (TJ) | Surface Mount | 5-LFPAK | SC-100, SOT-669 |
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ON Semiconductor |
MOSFET P-CHANNEL 30V 54A 8MLP |
5.076 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 54A (Tc) | 4.5V, 10V | 7mOhm @ 14A, 10V | 3V @ 250µA | 135nC @ 10V | ±25V | 5785pF @ 15V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 60V 22.1A POWER56 |
6.084 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 22.1A (Ta), 100A (Tc) | 10V | 3mOhm @ 50A, 10V | 4.5V @ 250µA | 75nC @ 10V | ±20V | 7560pF @ 30V | - | 2.5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Rohm Semiconductor |
MOSFET P-CH 30V 14A SOP8 |
4.446 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4V, 10V | 7mOhm @ 14A, 10V | 2.5V @ 1mA | 80nC @ 5V | ±20V | 8000pF @ 10V | - | 650mW (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
MOSFET N-CH 24V 60A DPAK |
62.514 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 24V | 60A (Tc) | 5V, 10V | 4.8mOhm @ 30A, 10V | 1.8V @ 250µA | 84nC @ 10V | ±20V | 3940pF @ 15V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 500V 11A D2PAK |
6.588 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 4V @ 250µA | 30nC @ 10V | ±25V | 940pF @ 50V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 30V 26A 8-SOIC |
5.202 |
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DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 30V | 26A (Tc) | 4.5V, 10V | 4.4mOhm @ 13A, 10V | 1V @ 250µA | 40nC @ 4.5V | ±20V | 4040pF @ 25V | - | 2.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |