Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 239/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Rohm Semiconductor |
MOSFET N-CH 40V 30A 8HSOP |
3.096 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 30A (Ta) | 4.5V, 10V | 2.5mOhm @ 30A, 10V | 2.5V @ 1mA | 56.8nC @ 10V | ±20V | 4230pF @ 20V | - | 3W (Ta), 35W (Tc) | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 500V 8A DPAK |
5.184 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 530mOhm @ 4A, 10V | 4V @ 250µA | 12nC @ 10V | ±25V | 395pF @ 100V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 12V 32A POWERPAKSO-8 |
3.454 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 32A (Tc) | 2.5V, 4.5V | 6mOhm @ 15A, 4.5V | 1.5V @ 250µA | 164nC @ 4.5V | ±8V | 10015pF @ 6V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
MOSFET N-CH 40V 18A 8-SOIC |
8.748 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 18A (Ta) | 4.5V, 10V | 4.3mOhm @ 18A, 10V | 3V @ 250µA | 86nC @ 10V | ±20V | 5680pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 700V 8A TO252 |
3.600 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 8A (Tc) | 10V | 600mOhm @ 4A, 10V | 4V @ 250µA | 12.6nC @ 10V | ±30V | 743pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 30V 80A DPAK |
8.982 |
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STripFET™ III | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 5V, 10V | 5.7mOhm @ 40A, 10V | 1V @ 250µA | 32nC @ 5V | ±20V | 2805pF @ 25V | - | 95W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 800V 5A DPAK |
8.064 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 800V | 5A (Tc) | 10V | 1.15Ohm @ 2.5A, 10V | 5V @ 100µA | 12nC @ 10V | ±30V | 270pF @ 100V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 80V 60A PPAK SO-8 |
2.898 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 60A (Tc) | 4.5V, 10V | 6.3mOhm @ 20A, 10V | 3V @ 250µA | 72nC @ 10V | ±20V | 2289pF @ 40V | - | 5.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
MOSFET N-CH 150V 8A DPAK |
7.506 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 8A (Ta), 50A (Tc) | 6V, 10V | 22mOhm @ 8A, 10V | 4V @ 250µA | 33nC @ 10V | ±20V | 2110pF @ 75V | - | 3.1W (Ta), 132W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 200V 39A D2PAK |
17.544 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 39A (Tc) | 10V | 57mOhm @ 17A, 10V | 4V @ 1mA | 96nC @ 10V | ±20V | 3750pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
MOSFET N-CH 20V 10A 8SOP |
2.736 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 10A (Ta) | 1.5V, 4.5V | 12mOhm @ 10A, 4.5V | 1V @ 1mA | 24nC @ 4.5V | ±10V | 2250pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
MOSFET N-CH 100V 4.5A 8PWRFLAT |
8.460 |
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DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 100V | 4.5A (Ta), 18A (Tc) | 10V | 70mOhm @ 2.25A, 10V | 4.5V @ 250µA | 7.8nC @ 10V | ±20V | 408pF @ 50V | - | 2.9W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (3.3x3.3) | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 60V 60A D2PAK |
22.176 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 60V | 60A (Tc) | 5V, 10V | 14mOhm @ 30A, 10V | 1V @ 250µA | 66nC @ 4.5V | ±15V | 2000pF @ 25V | - | 110W (Tc) | -65°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
TRENCH 8 80V NFET |
5.580 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 11A (Ta), 68A (Tc) | 6V, 10V | 9.5mOhm @ 10A, 10V | 4V @ 70µA | 19nC @ 10V | ±20V | 1140pF @ 40V | - | 3.2W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Microchip Technology |
MOSFET P-CH 16.5V 0.7A 8SOIC |
2.376 |
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- | P-Channel | MOSFET (Metal Oxide) | 16.5V | 700mA (Tj) | 2V, 5V | 1.5Ohm @ 300mA, 5V | 1V @ 1.1mA | - | ±10V | 250pF @ 15V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 200V 1.8A PPAK SO-8 |
3.672 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 1.8A (Ta) | 6V, 10V | 240mOhm @ 2.8A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | - | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 200V 1.8A PPAK SO-8 |
2.100 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 1.8A (Ta) | 6V, 10V | 240mOhm @ 2.8A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | - | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
MOSFET N-CH 60V 11A D-PAK |
6.462 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Ta) | 10V | 10.5mOhm @ 50A, 10V | 4V @ 250µA | 37nC @ 10V | ±20V | 1840pF @ 25V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET P-CH 45V 7A SOP8 |
5.886 |
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- | P-Channel | MOSFET (Metal Oxide) | 45V | 7A (Ta) | 4V, 10V | 27mOhm @ 7A, 10V | 2.5V @ 1mA | 47.6nC @ 5V | ±20V | 4100pF @ 10V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 30V 30A 8-PQFN |
5.310 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta), 174A (Tc) | 4.5V, 10V | 1.3mOhm @ 30A, 10V | 2.5V @ 1mA | 94nC @ 10V | ±20V | 5860pF @ 15V | - | 2.8W (Ta), 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | Power33 | 8-PowerWDFN |
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Infineon Technologies |
MOSFET N-CH 100V 88A D2PAK |
18.564 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 88A (Tc) | 10V | 10mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | ±20V | 5150pF @ 50V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Panasonic Electronic Components |
MOSFET N-CH 100V 15A UG-2 |
4.194 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 15A (Tc) | 10V | 100mOhm @ 12A, 10V | 4V @ 1mA | - | ±20V | 960pF @ 10V | - | 1W (Ta), 20W (Tc) | 150°C (TJ) | Surface Mount | U-DL | TO-252-4, DPak (3 Leads + Tab) |
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STMicroelectronics |
MOSFET N-CH 800V 4.5A D2PAK |
5.544 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 4.5A (Tc) | 10V | 1.6Ohm @ 2A, 10V | 5V @ 100µA | 7.5nC @ 10V | 30V | 255pF @ 100V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 55V 75A D2PAK |
19.284 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tj) | 4.5V, 10V | 5.8mOhm @ 25A, 10V | 2V @ 1mA | - | ±15V | 8600pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 60V 8.8A DPAK |
8.460 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 8.8A (Tc) | 10V | 280mOhm @ 5.3A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 570pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 100V 40A POWERDI506 |
7.488 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 40A (Tc) | 10V | 28mOhm @ 20A, 10V | 4V @ 250µA | 36nC @ 10V | ±20V | 2245pF @ 50V | - | 1.6W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 100V 7A 8POWERFLAT |
6.138 |
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DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 100V | - | 10V | 35mOhm @ 3.5A, 10V | 4.5V @ 250µA | 14nC @ 10V | ±20V | 920pF @ 50V | - | 2.9W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (3.3x3.3) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 40V 27.2A 8-SOIC |
6.192 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 27.2A (Tc) | 4.5V, 10V | 4.5mOhm @ 15A, 10V | 2.5V @ 250µA | 95nC @ 10V | ±25V | 4200pF @ 20V | - | 3W (Ta), 6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 500V 11.5A D2PAK |
17.016 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 11.5A (Tc) | 10V | 700mOhm @ 6A, 10V | 5V @ 250µA | 30nC @ 10V | ±30V | 1395pF @ 25V | - | 165W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
R6004JNJ IS A POWER MOSFET WITH |
23.664 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 15V | 1.43Ohm @ 2A, 15V | 7V @ 450µA | 10.5nC @ 15V | ±30V | 260pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | LPTS (D2PAK) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |