Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 146/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 61.8A TO-3P(N) |
6.732 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 61.8A (Ta) | 10V | 38mOhm @ 30.9A, 10V | 3.7V @ 3.1mA | 180nC @ 10V | ±30V | 6500pF @ 300V | Super Junction | 400W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 800V 44A PLUS247 |
6.804 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 800V | 44A (Tc) | 10V | 190mOhm @ 22A, 10V | 5V @ 8mA | 198nC @ 10V | ±30V | 12000pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 150V 240A TO264 |
6.936 |
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GigaMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 240A (Tc) | 10V | 5.2mOhm @ 60A, 10V | 5V @ 8mA | 460nC @ 10V | ±20V | 32000pF @ 25V | - | 1250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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Infineon Technologies |
MOSFET N-CH 650V TO-247-3 |
8.262 |
|
Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 63.3A (Tc) | 10V | 48mOhm @ 29.4A, 10V | 4.5V @ 2.9mA | 270nC @ 10V | ±20V | 7440pF @ 100V | - | 500W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 900V 36A TO-247 |
6.420 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 36A (Tc) | 10V | 120mOhm @ 26A, 10V | 3.5V @ 2.9mA | 270nC @ 10V | ±20V | 6800pF @ 100V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 650V 120A TO-264 |
7.398 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 120A (Tc) | 10V | 24mOhm @ 60A, 10V | 4.5V @ 8mA | 240nC @ 10V | ±30V | 13600pF @ 25V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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STMicroelectronics |
MOSFET N-CH 650V 58A TO-247-4 |
9.936 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 58A (Tc) | 10V | 45mOhm @ 29A, 10V | 5V @ 250µA | 143nC @ 10V | ±25V | 6420pF @ 100V | - | 330W (Tc) | 150°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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Microsemi |
MOSFET N-CH 1000V 37A TO-264 |
6.948 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 37A (Tc) | 10V | 330mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | ±30V | 9835pF @ 25V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
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GeneSiC Semiconductor |
TRANS SJT 1200V 45A |
7.794 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 45A (Tc) | - | 60mOhm @ 20A | - | - | - | 3091pF @ 800V | - | 282W (Tc) | 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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IXYS |
MOSFET N-CH 150V 310A SOT227 |
17.784 |
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GigaMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 310A (Tc) | 10V | 4mOhm @ 60A, 10V | 5V @ 8mA | 715nC @ 10V | ±20V | 47500pF @ 25V | - | 1070W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 600V 77A SOT-227 |
6.384 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 77A (Tc) | 10V | 35mOhm @ 60A, 10V | 3.9V @ 5.4mA | 640nC @ 10V | ±20V | 13600pF @ 25V | - | 568W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 500V 62A PLUS264 |
7.728 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 62A (Tc) | 20V | 100mOhm @ 31A, 20V | 5.5V @ 250µA | 550nC @ 20V | ±30V | 11500pF @ 25V | - | 800W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS264™ | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 1000V 29A ISOPLUS264 |
15.072 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 29A (Tc) | 10V | 280mOhm @ 19A, 10V | 5.5V @ 8mA | 250nC @ 10V | ±30V | 13500pF @ 25V | - | 380W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS264™ | ISOPLUS264™ |
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Nexperia |
MOSFET N-CH 20V SOT883 |
212.064 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 1.5V, 4.5V | 200mOhm @ 1.5A, 4.5V | 950mV @ 250µA | 1.6nC @ 4.5V | ±8V | 93pF @ 10V | - | 350mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006B-3 | 3-XFDFN |
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Rohm Semiconductor |
MOSFET P-CH 30V 2.5A WEMT6 |
79.662 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 4V, 10V | 75mOhm @ 2.5A, 10V | 2.5V @ 1mA | 5.2nC @ 5V | ±20V | 480pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | 6-WEMT | SOT-563, SOT-666 |
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Nexperia |
MOSFET P-CH 20V 3QFN |
87.882 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 500mA (Ta) | 1.2V, 4.5V | 1.4Ohm @ 500mA, 4.5V | 950mV @ 250µA | 2.1nC @ 4.5V | ±8V | 43pF @ 10V | - | 360mW (Ta), 2.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006B-3 | 3-XFDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 30V 6.5A SOT26 |
100.080 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 6.5A (Tc) | 4.5V, 10V | 24mOhm @ 6A, 10V | 2.5V @ 250µA | 4.1nC @ 4.5V | ±20V | 345pF @ 25V | - | 1.56W (Tc) | 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
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Micro Commercial Co |
MOSFET P-CH 12V 8A DFN202 |
28.458 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 8A (Ta) | 1.5V, 4.5V | 28mOhm @ 5A, 4.5V | 1V @ 250µA | 21nC @ 4.5V | ±8V | 1275pF @ 6V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | DFN2020-6J | 6-WDFN Exposed Pad |
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Rohm Semiconductor |
MOSFET P-CH 12V 1.3A WEMT6 |
61.992 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 1.3A (Ta) | 1.5V, 4.5V | 260mOhm @ 1.3A, 4.5V | 1V @ 1mA | 2.4nC @ 4.5V | ±10V | 290pF @ 6V | Schottky Diode (Isolated) | 700mW (Ta) | 150°C (TJ) | Surface Mount | 6-WEMT | SOT-563, SOT-666 |
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Rohm Semiconductor |
MOSFET P-CH 30V 5A TSST8 |
27.642 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4V, 10V | 36mOhm @ 5A, 10V | 2.5V @ 1mA | 13nC @ 5V | ±20V | 1300pF @ 10V | - | 1.25W (Ta) | 150°C (TJ) | Surface Mount | 8-TSST | 8-SMD, Flat Lead |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 30V 9A 8SOP |
23.190 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Tc) | 4.5V, 10V | 18mOhm @ 8A, 10V | 2V @ 250µA | 14nC @ 4.5V | ±20V | 345pF @ 25V | - | 2.5W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 30V 4.7A 8SOP |
20.730 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 4.7A (Tc) | 4.5V, 10V | 60mOhm @ 3A, 10V | 2.5V @ 250µA | 9.6nC @ 4.5V | ±20V | 560pF @ 15V | - | 2.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 30V 5.3A 8SOP |
19.284 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 5.3A (Tc) | 4.5V, 10V | 60mOhm @ 5.3A, 10V | 3V @ 250µA | 27nC @ 10V | ±20V | 551.57pF @ 15V | - | 5.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 30V 10A 8SOP |
18.852 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 10A (Tc) | 4.5V, 10V | 18mOhm @ 8A, 10V | 2.5V @ 250µA | 23nC @ 4.5V | ±20V | 1730pF @ 15V | - | 2.5W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 55A 8PDFN |
22.236 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 55A (Tc) | 4.5V, 10V | 8mOhm @ 16A, 10V | 2.5V @ 250µA | 7.5nC @ 4.5V | ±20V | 750pF @ 25V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 73A 8PDFN |
26.988 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 73A (Tc) | 4.5V, 10V | 8mOhm @ 14A, 10V | 2.5V @ 250µA | 14.4nC @ 10V | ±20V | 843pF @ 15V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Rohm Semiconductor |
MOSFET P-CH 30V 1A TSMT6 |
82.878 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 1A (Ta) | 4V, 10V | 400mOhm @ 1A, 10V | 2.5V @ 1mA | 1.7nC @ 5V | ±20V | 90pF @ 10V | Schottky Diode (Isolated) | 1.25W (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Taiwan Semiconductor Corporation |
MOSFET P-CH 20V 4.5A 6-TDFN |
98.310 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 4.5A (Ta) | 1.8V, 4.5V | 94mOhm @ 2.8A, 4.5V | 500mV @ 250µA | 4.5nC @ 4.5V | ±12V | 5.2pF @ 6V | - | 6.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TDFN (2x2) | 6-VDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET P CH 20V 6A 2-2AA1A |
25.284 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.5V, 4.5V | 23.1mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8nC @ 4.5V | ±8V | 1800pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Central Semiconductor Corp |
MOSFET P-CH 20V 0.1A SOT523 |
29.724 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.5V, 4V | 8Ohm @ 10mA, 4V | 1.1V @ 250µA | 0.66nC @ 4.5V | 10V | 45pF @ 3V | - | 250mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |