Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 144/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 600V 29A TO247AC |
9.000 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 4V @ 250µA | 130nC @ 10V | ±30V | 2600pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 37.9A TO247 |
17.040 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 37.9A (Tc) | 10V | 99mOhm @ 18.1A, 10V | 3.5V @ 1.21mA | 119nC @ 10V | ±20V | 2660pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 30.8A TO-247 |
22.656 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 99mOhm @ 15.4A, 10V | 4.5V @ 1.5mA | 105nC @ 10V | ±30V | 3000pF @ 300V | - | 230W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 17A TO-220FP |
9.504 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 17A (Tc) | 10V | 190mOhm @ 8.5A, 10V | 5V @ 250µA | 50nC @ 10V | ±25V | 1950pF @ 100V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 500V 16A TO-247AC |
15.288 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 320mOhm @ 9.9A, 10V | 5V @ 250µA | 130nC @ 10V | ±30V | 2760pF @ 25V | - | 220W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
850V/20A ULTRA JUNCTION X-CLASS |
8.532 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 850V | 20A (Tc) | 10V | 330mOhm @ 500mA, 10V | 5.5V @ 2.5mA | 63nC @ 10V | ±30V | 1660pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2Pak-HV) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 33A TO-263 |
28.710 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 33A (Tc) | 10V | 98mOhm @ 16.5A, 10V | 4V @ 250µA | 155nC @ 10V | ±30V | 3454pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V 31.2A TO247 |
11.028 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | ±20V | 3240pF @ 100V | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 16A TO-247AC |
6.324 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 16A (Tc) | 10V | 300mOhm @ 9.6A, 10V | 4V @ 250µA | 76nC @ 10V | ±30V | 2200pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 300V 38A TO-247AC |
8.082 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 300V | 38A (Tc) | 10V | 69mOhm @ 24A, 10V | 5V @ 250µA | 125nC @ 10V | ±20V | 5168pF @ 50V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 250V 62A TO-3P |
9.228 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 62A (Tc) | 10V | 35mOhm @ 31A, 10V | 4V @ 250µA | 130nC @ 10V | ±30V | 6280pF @ 25V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH 600V 36A TO-220-3 |
17.616 |
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SupreMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 36A (Tc) | 10V | 90mOhm @ 18A, 10V | 4V @ 250µA | 112nC @ 10V | ±30V | 4785pF @ 100V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 500V 48A TO-247 |
11.172 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 48A (Tc) | 10V | 105mOhm @ 24A, 10V | 5V @ 250µA | 137nC @ 10V | ±20V | 6460pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 150V 43A TO220-3 |
9.084 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 43A (Tc) | 8V, 10V | 7.5mOhm @ 43A, 10V | 4V @ 270µA | 93nC @ 10V | ±20V | 7280pF @ 75V | - | 39W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 650V 32.4A TO-247AC |
16.188 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 32.4A (Tc) | 10V | 105mOhm @ 16.5A, 10V | 4V @ 250µA | 173nC @ 10V | ±30V | 4040pF @ 100V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 950V 10A TO-220 |
6.984 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 950V | 10A (Tc) | 10V | 850mOhm @ 5A, 10V | 5V @ 100µA | 51nC @ 10V | ±30V | 1620pF @ 100V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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IXYS |
MOSFET N-CH 1000V 4A TO-263 |
7.728 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 4A (Tc) | 10V | 3Ohm @ 2A, 10V | 4.5V @ 1.5mA | 39nC @ 10V | ±20V | 1050pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 40A TO247AC |
8.796 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 40A (Tc) | 10V | 75mOhm @ 20A, 10V | 4V @ 250µA | 197nC @ 10V | ±30V | 4436pF @ 100V | - | 329W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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STMicroelectronics |
N-CHANNEL 900 V, 0.24 OHM TYP., |
7.404 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 900V | 20A (Tc) | 10V | 250mOhm @ 10A, 10V | 5V @ 100µA | 40nC @ 10V | ±30V | 1500pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 47A TO247 |
6.576 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 72mOhm @ 25.8A, 10V | 4V @ 1mA | 145nC @ 10V | ±20V | 3850pF @ 25V | - | 120W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 650V 20A TO-247 |
8.136 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 20A (Tc) | 10V | 210mOhm @ 10A, 10V | 5.5V @ 250µA | 35nC @ 10V | ±30V | 1390pF @ 25V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 14A TO-247AC |
7.650 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 400mOhm @ 8.4A, 10V | 4V @ 250µA | 74nC @ 10V | ±30V | 2200pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 950V 17.5A TO-247 |
11.856 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 950V | 17.5A (Tc) | 10V | 330mOhm @ 9A, 10V | 5V @ 100µA | 40nC @ 10V | ±30V | 1500pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 40A TO220AB |
20.544 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 40A (Tc) | 10V | 65mOhm @ 16A, 10V | 5V @ 250µA | 98nC @ 10V | ±30V | 2700pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 100V 75A TO-247 |
7.932 |
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UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 475nC @ 20V | ±20V | 7585pF @ 25V | - | 515W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 30A TO-247 |
6.540 |
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PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 240mOhm @ 15A, 10V | 5V @ 250µA | 82nC @ 10V | ±30V | 5050pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 21A TO-247AC |
6.552 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 320mOhm @ 13A, 10V | 5V @ 250µA | 150nC @ 10V | ±30V | 4000pF @ 25V | - | 330W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 23A TO-247AC |
20.448 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 23A (Tc) | 10V | 235mOhm @ 14A, 10V | 5V @ 250µA | 150nC @ 10V | ±30V | 3600pF @ 25V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 32A TO-247AC |
8.844 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 32A (Tc) | 10V | 160mOhm @ 32A, 10V | 5V @ 250µA | 190nC @ 10V | ±30V | 5280pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 36A TO-268 D3 |
7.296 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 500V | 36A (Tc) | 10V | 170mOhm @ 500mA, 10V | 5V @ 4mA | 93nC @ 10V | ±30V | 5500pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |