Transistor - FET, MOSFET - Array
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Array
Record 3.829
Pagina 48/128
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Funzione FET | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Capacità di ingresso (Ciss) (Max) @ Vds | Potenza - Max | Temperatura di esercizio | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
4.050 |
|
- | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 75Ohm @ 5V | 1V @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16SOIC |
6.570 |
|
EPAD® | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 540Ohm @ 0V | 3.45V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 0.08A 8DIP |
5.490 |
|
EPAD®, Zero Threshold™ | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | 14Ohm | 10mV @ 20µA | - | 30pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16SOIC |
5.076 |
|
EPAD®, Zero Threshold™ | 4 N-Channel, Matched Pair | Standard | 10.6V | - | 500Ohm @ 4V | 10mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 0.08A 16DIP |
5.490 |
|
EPAD®, Zero Threshold™ | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | 25Ohm | 10mV @ 10µA | - | 15pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 4 P-CH 8V 16DIP |
4.734 |
|
EPAD®, Zero Threshold™ | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 20mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 2P-CH 10.6V 8SOIC |
7.092 |
|
- | 2 P-Channel (Dual) Matched Pair | Standard | 10.6V | - | 270Ohm @ 5V | 1.2V @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS |
MOSFET N/P-CH 200V 26A/17A I4PAC |
6.354 |
|
Polar™ | N and P-Channel | Standard | 200V | 26A, 17A | 60mOhm @ 25A, 10V | 5V @ 250µA | 70nC @ 10V | 2720pF @ 25V | 125W | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac™-5 | ISOPLUS i4-PAC™ |
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Diodes Incorporated |
MOSFET 2N-CHA 12V 2A DFN1310 |
5.544 |
|
Automotive, AEC-Q101 | 2 N-Channel (Dual) | Standard | 12V | 2A | 150mOhm @ 1A, 4.5V | 1V @ 250µA | 1.4nC @ 4.5V | 115pF @ 6V | 390mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-XFDFN Exposed Pad | X2-DFN1310-6 (Type B) |
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Diodes Incorporated |
MOSFET 2N-CH 20V 7.5A UDFN2030-6 |
509 |
|
- | 2 N-Channel (Dual) Common Drain | Standard | 20V | 7.5A | 20.2mOhm @ 4.5A, 4.5V | 1V @ 250µA | 18.4nC @ 8V | 887pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFDFN Exposed Pad | U-DFN2030-6 (Type B) |
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Diodes Incorporated |
MOSFET N/P-CH 35V TO252-4L |
8.928 |
|
- | N and P-Channel, Common Drain | Logic Level Gate | 35V | 5.3A, 5A | 35mOhm @ 8A, 10V | 3V @ 250µA | 18.7nC @ 10V | 850pF @ 25V | 1.54W | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-5, DPak (4 Leads + Tab), TO-252AD | TO-252-4L |
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Diodes Incorporated |
MOSFET 2N-CH 20V 11A U-DFN2535-6 |
6.588 |
|
- | 2 N-Channel (Dual) Common Drain | Standard | 24V | 11A | 7mOhm @ 5.5A, 4.5V | 1.5V @ 250µA | 33.2nC @ 4.5V | 2665pF @ 10V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2535-6 |
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Central Semiconductor Corp |
MOSFET 2N-CH 60V 0.28A SOT563 |
5.544 |
|
- | 2 N-Channel (Dual) | Standard | 60V | 280mA | 2Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.59nC @ 4.5V | 50pF @ 25V | 350mW | -65°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Nexperia |
MOSFET 2N-CH 100V 9.8A LFPAK56 |
3.798 |
|
- | 2 N-Channel (Dual) | Standard | 100V | 9.8A | 121mOhm @ 5A, 10V | 4V @ 1mA | 10.5nC @ 10V | 564pF @ 25V | 32W | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1205, 8-LFPAK56 | LFPAK56D |
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STMicroelectronics |
MOSFET 2N-CH 30V 8A 8-SOIC |
6.174 |
|
STripFET™ II | 2 N-Channel (Dual) | Logic Level Gate | 30V | 8A | 20mOhm @ 4A, 10V | 1V @ 250µA | 17nC @ 5V | 800pF @ 25V | 1.6W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
MOSFET 2P-CH 30V 4.2A 8-SOIC |
5.130 |
|
- | 2 P-Channel (Dual) | Logic Level Gate | 30V | 4.2A | 45mOhm @ 4.2A, 10V | 1V @ 250µA (Min) | 29.6nC @ 10V | 1022pF @ 15V | 1.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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ON Semiconductor |
MOSFET 2N-CH 30V 13A/18A 8-PQFN |
7.380 |
|
PowerTrench® | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate | 30V | 13A, 18A | 8mOhm @ 13A, 10V | 2.7V @ 250µA | 29nC @ 10V | 1765pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | Power56 |
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EPC |
GAN TRANS ASYMMETRICAL HALF BRID |
2.430 |
|
- | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 16A (Ta) | 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V | 2.5V @ 5mA | 2.2nC @ 5V, 5.7nC @ 5V | 230pF @ 15V, 590pF @ 15V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16DIP |
6.714 |
|
EPAD® | 4 N-Channel, Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 810mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 2P-CH 10.6V 8DIP |
8.262 |
|
- | 2 P-Channel (Dual) Matched Pair | Standard | 10.6V | - | 270Ohm @ 5V | 1.2V @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH + P-CH |
7.128 |
|
- | N and P-Channel | Logic Level Gate, 1.5V Drive | 20V | 500mA (Ta), 330mA (Ta) | 630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V | 1V @ 1mA | 1.23nC, 1.2nC @ 4V | 46pF, 43pF @ 10V | 500mW (Ta) | 150°C | Surface Mount | 6-SMD, Flat Leads | UF6 |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CHX2 VDSS3 |
5.562 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CHX2 VDSS3 |
7.596 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CHX2 VDSS- |
4.914 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CHX2 VDSS- |
3.888 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
X34 PB-F UF6 S-MOS (LF) TRANSIST |
7.884 |
|
- | N and P-Channel | Logic Level Gate, 4V Drive | 30V | 1.6A (Ta), 1.4A (Ta) | 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V | 2.6V @ 1mA, 2V @ 1mA | 5.1nC, 2.9nC @ 10V | 180pF, 120pF @ 15V | 500mW (Ta) | 150°C | Surface Mount | 6-SMD, Flat Leads | UF6 |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CHX2 VDSS- |
3.544 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CHX2 VDSS- |
6.516 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Rohm Semiconductor |
4V DRIVE NCH+NCH MOSFET. A POWER |
3.456 |
|
- | 2 N-Channel (Dual) | Standard | 40V | 5.2A (Ta) | 85mOhm @ 5.2A, 10V | 2.5V @ 1mA | 1.7nC @ 5V | 100pF @ 10V | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
SH8MA2 IS A POWER MOSFET WITH LO |
4.410 |
|
- | N and P-Channel | Standard | 30V | 4.5A (Ta) | 80mOhm @ 4.5A, 10V, 82mOhm @ 4.5A, 10V | 2.5V @ 1mA | 3nC, 6.7nC @ 4.5V | 125pF, 305pF @ 15V | 1.4W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |