Transistor - FET, MOSFET - Array
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Mostra filtri
Ripristina filtri
Applica filtri
CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Array
Record 3.829
Pagina 18/128
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Funzione FET | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Capacità di ingresso (Ciss) (Max) @ Vds | Potenza - Max | Temperatura di esercizio | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Siliconix |
MOSFET 2P-CH 20V 4.5A SC-70-6L |
28.398 |
|
TrenchFET® | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4.5A (Tc) | 57mOhm @ 3.6A, 4.5V | 1.4V @ 250µA | 23nC @ 10V | - | 7.8W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Dual | PowerPAK® SC-70-6 Dual |
|
|
|
Diodes Incorporated |
MOSFET 2N-CH 20V 6.1A DFN |
21.858 |
|
- | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 6.1A | 23mOhm @ 6.5A, 4.5V | 1.05V @ 250µA | 8.8nC @ 4.5V | 143pF @ 10V | 920mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerUDFN | U-DFN3030-8 |
|
|
|
Rohm Semiconductor |
MOSFET N/P-CH 30V 4.5A/3A TSMT8 |
29.460 |
|
- | N and P-Channel | Logic Level Gate | 30V | 4.5A, 3A | 35mOhm @ 4.5A, 10V | 2.5V @ 1mA | 8.4nC @ 10V | 365pF @ 10V | 1.25W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 |
|
|
|
Vishay Siliconix |
MOSFET 2N-CH 20V 4.5A SC70-6 |
218.982 |
|
TrenchFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 4.5A | 46mOhm @ 3.9A, 4.5V | 1.4V @ 250µA | 12nC @ 10V | 350pF @ 10V | 7.8W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Dual | PowerPAK® SC-70-6 Dual |
|
|
|
Vishay Siliconix |
MOSFET N/P-CH 20V 4A 1206-8 |
78.486 |
|
TrenchFET® | N and P-Channel | Logic Level Gate | 20V | 4A, 3.7A | 55mOhm @ 4.4A, 4.5V | 1.5V @ 250µA | 4.2nC @ 5V | 285pF @ 10V | 3.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1206-8 ChipFET™ |
|
|
|
Vishay Siliconix |
MOSFET N/P-CH 20V 4A 1206-8 |
58.914 |
|
TrenchFET® | N and P-Channel | Logic Level Gate | 20V | 4A, 3.7A | 55mOhm @ 4.3A, 4.5V | 1.5V @ 250µA | 4.2nC @ 5V | 285pF @ 10V | 3.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1206-8 ChipFET™ |
|
|
|
Vishay Siliconix |
MOSFET 2P-CH 12V 4.5A SC70-6 |
29.046 |
|
TrenchFET® | 2 P-Channel (Dual) | Logic Level Gate | 12V | 4.5A | 61mOhm @ 3.6A, 4.5V | 1V @ 250µA | 20nC @ 8V | 590pF @ 6V | 6.5W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Dual | PowerPAK® SC-70-6 Dual |
|
|
|
Central Semiconductor Corp |
MOSFET 2P-CH 20V 430MA SOT563 |
28.560 |
|
- | 2 P-Channel (Dual) | Logic Level Gate | 20V | 430mA | 900mOhm @ 430mA, 4.5V | 1V @ 250µA | 1.2nC @ 4.5V | 175pF @ 16V | 350mW | -65°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
|
|
|
Rohm Semiconductor |
MOSFET 2P-CH 12V 2A TSMT6 |
56.286 |
|
- | 2 P-Channel (Dual) | Logic Level Gate | 12V | 2A | 105mOhm @ 2A, 4.5V | 1V @ 1mA | 6.5nC @ 4.5V | 770pF @ 6V | 600mW | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSMT6 (SC-95) |
|
|
|
Diodes Incorporated |
MOSFET 2N-CH 20V 5.2A 8UDFN |
174.336 |
|
- | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 5.2A | 18mOhm @ 6A, 4.5V | 1.1V @ 250µA | 16nC @ 4.5V | 1472pF @ 10V | 770mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerUDFN | U-DFN3030-8 |
|
|
|
Vishay Siliconix |
MOSFET 2P-CH 20V 4.5A SC70-6L |
27.486 |
|
TrenchFET® | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4.5A | 54mOhm @ 3.8A, 4.5V | 900mV @ 250µA | 25nC @ 8V | 770pF @ 10V | 7.8W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Dual | PowerPAK® SC-70-6 Dual |
|
|
|
Rohm Semiconductor |
MOSFET 2N-CH 30V 1.4A TUMT6 |
26.904 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 30V | 1.4A | 240mOhm @ 1.4A, 10V | 2.5V @ 1mA | 2nC @ 5V | 70pF @ 10V | 1W | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | TUMT6 |
|
|
|
ON Semiconductor |
MOSFET N/P-CH 30V 4.5A ECH8 |
288.204 |
|
- | N and P-Channel | Logic Level Gate | 30V | 4.5A | 59mOhm @ 2A, 10V | - | 4.4nC @ 10V | 240pF @ 10V | 1.5W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-ECH |
|
|
|
Rohm Semiconductor |
MOSFET 2P-CH 20V 1A TUMT6 |
23.376 |
|
- | 2 P-Channel (Dual) | Logic Level Gate | 20V | 1A | 390mOhm @ 1A, 4.5V | 2V @ 1mA | 2.1nC @ 4.5V | 150pF @ 10V | 1W | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | TUMT6 |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET 2 P-CH 30V 4.9A 8SOP |
117.792 |
|
- | 2 P-Channel (Dual) | Standard | 30V | 4.9A (Ta) | 60mOhm @ 4.9A, 10V | 3V @ 250µA | 28nC @ 10V | 745pF @ 15V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET 2 N-CH 20V 6.5A 8TSSOP |
108.996 |
|
- | 2 N-Channel (Dual) | Standard | 20V | 6.5A (Tc) | 22mOhm @ 6A, 4.5V | 1V @ 250µA | 15nC @ 4.5V | 950pF @ 10V | 1.04W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
|
|
|
Diodes Incorporated |
MOSFET N/P-CH 60V 5.1A/3.1A 8-SO |
48.816 |
|
- | N and P-Channel | Logic Level Gate | 60V | 5.1A, 3.1A | 40mOhm @ 8A, 10V | 3V @ 250µA | 20.8nC @ 10V | 1130pF @ 15V | 1.24W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Vishay Siliconix |
MOSFET 2N-CH 30V 6A PWRPK CHPFET |
158.622 |
|
TrenchFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6A | 30mOhm @ 5A, 10V | 2.2V @ 250µA | 11nC @ 10V | 320pF @ 15V | 10.4W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® ChipFET™ Dual | PowerPAK® ChipFet Dual |
|
|
|
Vishay Siliconix |
MOSFET 2 N-CH 40V 6A POWERPAK |
54.540 |
|
TrenchFET® | 2 N-Channel (Dual) | Standard | 40V | 6A (Tc) | 82mOhm @ 5A, 10V | 2.5V @ 250µA | 2.6nC @ 4.5V | 165pF @ 20V | 7W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® ChipFET™ Dual | PowerPAK® ChipFet Dual |
|
|
|
ON Semiconductor |
MOSFET 2N-CH 30V 4.5A 8SOIC |
19.584 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4.5A | 24mOhm @ 6.9A, 10V | 3V @ 250µA | 9.5nC @ 10V | 520pF @ 15V | 680mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET 2 N-CH 30V 5.9A 8SOP |
112.866 |
|
- | 2 N-Channel (Dual) | Standard | 30V | 5.9A (Ta) | 36mOhm @ 5.9A, 10V | 3V @ 250µA | 13nC @ 10V | 610pF @ 15V | 3W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 20V 2.4A MICRO8 |
33.000 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 2.4A | 135mOhm @ 1.7A, 4.5V | 700mV @ 250µA | 8nC @ 4.5V | 260pF @ 15V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ |
|
|
|
Vishay Siliconix |
MOSFET 2N-CH 30V 8A 8SOIC |
22.944 |
|
TrenchFET® | 2 N-Channel (Dual) | Standard | 30V | 8A | 22mOhm @ 7.5A, 10V | 2.4V @ 250µA | 23nC @ 10V | 865pF @ 15V | 3.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Diodes Incorporated |
MOSFET N/P-CH 30V 8SOIC |
21.684 |
|
- | N and P-Channel | Standard | 30V | 5.5A, 5.8A | 27mOhm @ 6A, 10V | 3V @ 250µA | 13.2nC @ 5V | 641pF @ 15V | 1.2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Rohm Semiconductor |
MOSFET N/P-CH 30V 3.5A TSMT8 |
22.860 |
|
- | N and P-Channel | - | 30V | 3.5A | - | - | - | - | - | - | Surface Mount | 8-SMD, Flat Lead | TSMT8 |
|
|
|
ON Semiconductor |
MOSFET 2N-CH 30V 2.2A CHIPFET |
42.690 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 30V | 2.2A | 85mOhm @ 2.9A, 10V | 3V @ 250µA | 7nC @ 10V | 140pF @ 15V | 640mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | ChipFET™ |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 20V 5.4A MICRO8 |
158.448 |
|
HEXFET® | 2 N-Channel (Dual) | Standard | 20V | 5.4A | 30mOhm @ 5.4A, 4.5V | 1.2V @ 250µA | 26nC @ 4.5V | 1310pF @ 15V | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 20V 8.9A 8-SOIC |
27.822 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 8.9A | 18.3mOhm @ 8.9A, 10V | 2.5V @ 250µA | 7.4nC @ 4.5V | 540pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Diodes Incorporated |
MOSFET 2N-CH 20V 12.2A DFN2050-4 |
69.066 |
|
- | 2 N-Channel (Dual) | Standard | 20V | 12.2A (Ta) | 9.5mOhm @ 10A, 4.5V | 1V @ 250µA | 56nC @ 10V | 2248pF @ 10V | 2.1W | -55°C ~ 150°C (TJ) | Surface Mount | 4-VFDFN Exposed Pad | V-DFN2050-4 |
|
|
|
ON Semiconductor |
MOSFET 2N-CH 30V 3.8A 6MICROFET |
24.384 |
|
PowerTrench® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 3.8A | 68mOhm @ 3.8A, 4.5V | 1.5V @ 250µA | 5.2nC @ 5V | 375pF @ 15V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-MicroFET (2x2) |