Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 575/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 16A TO263AB |
6.480 |
|
Automotive, AEC-Q101 | Standard | 500V | 16A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 500V | 60pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 16A TO263AB |
8.568 |
|
Automotive, AEC-Q101 | Standard | 600V | 16A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 60pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 2A TO277A |
7.992 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 200V | 2A | 1.6V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 200V | 77pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 2A TO277A |
5.634 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 200V | 2A | 1.6V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 200V | 77pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 2A TO277A |
6.120 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 400V | 2A | 1.6V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 400V | 77pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 2A TO277A |
3.490 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 400V | 2A | 1.6V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 400V | 77pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 2A TO277A |
2.430 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 600V | 2A | 1.6V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 600V | 77pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 2A TO277A |
2.574 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 600V | 2A | 1.6V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 600V | 77pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.8A TO277A |
3.060 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 800V | 1.8A | 1.9V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 800V | 55pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.8A TO277A |
7.308 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 800V | 1.8A | 1.9V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 800V | 55pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCH 1KV 1.8A TO277A |
8.352 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 1000V | 1.8A | 1.9V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 1000V | 55pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 120V 20A TO220AB |
8.154 |
|
TMBS® | Schottky | 120V | 20A | 1.33V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 120V | - | Through Hole | TO-220-3 | TO-220AB | -40°C ~ 150°C |
|
|
|
Comchip Technology |
DIODE GEN PURP 200V 2A DO214AA |
3.436 |
|
- | Standard | 200V | 2A | 875mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | 150°C (Max) |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 16A ITO220AC |
7.362 |
|
Automotive, AEC-Q101 | Standard | 400V | 16A | 1.3V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 100pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
|
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|
Microsemi |
DIODE GEN PURP 500V 1A DO214BA |
3.996 |
|
- | Standard | 500V | 1A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 500V | - | Surface Mount | DO-214BA | DO-214BA | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.7A TO277A |
3.150 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 200V | 1.7A | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 200V | 72pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.7A TO277A |
7.218 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 200V | 1.7A | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 200V | 72pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.7A TO277A |
7.074 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 400V | 1.7A | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | 72pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.7A TO277A |
5.850 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 400V | 1.7A | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | 72pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.7A TO277A |
5.472 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 600V | 1.7A | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 72pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.7A TO277A |
7.650 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 600V | 1.7A | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 72pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.4A TO277A |
6.372 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 800V | 1.4A | 2.5V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.4A TO277A |
4.122 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 800V | 1.4A | 2.5V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCH 1KV 1.4A TO277A |
3.132 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 1000V | 1.4A | 2.5V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCH 1KV 1.4A TO277A |
5.670 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 1000V | 1.4A | 2.5V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20A 80V TO-263AB |
5.346 |
|
- | Schottky | 80V | 20A | 920mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700µA @ 80V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20A 80V TO-263AB |
7.110 |
|
- | Schottky | 80V | 20A | 920mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700µA @ 80V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 150V 20A TO220AB |
5.706 |
|
TMBS® | Schottky | 150V | 20A | 1.6V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 150V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 8A ITO220AC |
7.596 |
|
- | Standard | 50V | 8A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 8A ITO220AC |
8.748 |
|
- | Standard | 100V | 8A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |