Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 518/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
DIODE SBR 45V 10A POWERDI5 |
2.016 |
|
- | Super Barrier | 45V | 10A | 470mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 280µA @ 45V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE RECT SBR 45V 8A POWERDI5 |
7.182 |
|
SBR® | Super Barrier | 45V | 8A | 510mV @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 350µA @ 45V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY 40V 2A SJP |
4.050 |
|
- | Schottky | 40V | 2A | 550mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY 60V 2A SJP |
5.184 |
|
- | Schottky | 60V | 2A | 690mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY 90V 2A SJP |
3.544 |
|
- | Schottky | 90V | 2A | 850mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 90V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 200V 1A SJP |
3.654 |
|
- | Standard | 200V | 1A | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 25µA @ 200V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 3A 150V DO-214AB |
8.964 |
|
- | Schottky | 150V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 6A TO277A |
2.070 |
|
FRED Pt® | Standard | 100V | 6A | 940mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 22ns | 2µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 6A TO277A |
3.060 |
|
FRED Pt® | Standard | 200V | 6A | 940mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 22ns | 2µA @ 200V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A DO201AD |
2.916 |
|
- | Standard | 600V | 3A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 20µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A DO201AD |
3.888 |
|
- | Standard | 600V | 3A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 20µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | -40°C ~ 150°C |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 600V 1A SMB |
2.268 |
|
- | Standard | 600V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 5A DO214AA |
6.480 |
|
Automotive, AEC-Q101 | Schottky | 150V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO214AB |
4.338 |
|
- | Standard | 200V | 3A | 875mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO214AB |
7.056 |
|
Automotive, AEC-Q101 | Standard | 200V | 3A | 875mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A SMC |
8.046 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 100V | 3A | 900mV @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 2µA @ 100V | - | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A SMC |
6.660 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 200V | 3A | 900mV @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 2µA @ 200V | - | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 4A TO277A |
4.554 |
|
FRED Pt® | Standard | 200V | 4A | 930mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 2µA @ 200V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -65°C ~ 175°C |
|
|
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Vishay Semiconductor Diodes Division |
RECTIFIER BARRIER SCHOTTKY TO-27 |
6.894 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
RECTIFIER BARRIER SCHOTTKY TO-27 |
2.322 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 3A TO277A |
4.536 |
|
eSMP® | Schottky | 30V | 3A | 470mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 30V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 3A TO277A |
8.334 |
|
Automotive, AEC-Q101 | Schottky | 30V | 3A | 470mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 30V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 45V 12A 5DFN |
4.770 |
|
- | Schottky | 45V | 12A | 570mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120µA @ 45V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 3A 90V DO-214AB |
8.424 |
|
- | Schottky | 90V | 3A | 800mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 90V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 3A 100V DO-214AB |
3.510 |
|
- | Schottky | 100V | 3A | 800mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 3A 90V DO-214AB |
7.200 |
|
- | Schottky | 90V | 3A | 800mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20µA @ 90V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 3A 45V DO-221AC |
7.812 |
|
TMBS®, SlimSMA™ | Schottky | 45V | 3A | 540mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 450µA @ 45V | 425pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO201AD |
4.896 |
|
- | Standard | 400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 20µA @ 400V | - | Through Hole | DO-201AD, Axial | DO-201AD | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO201AD |
4.068 |
|
- | Standard | 400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 20µA @ 400V | - | Through Hole | DO-201AD, Axial | DO-201AD | -40°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 5A DO214AB |
8.802 |
|
- | Schottky | 60V | 5A | 750mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |