Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 517/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 8A DO201AD |
2.754 |
|
- | Schottky | 50V | 8A | 700mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 8A DO201AD |
4.284 |
|
- | Schottky | 60V | 8A | 700mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
SCHOTTKY RECTIFIER PDI5 T&R 5K |
8.154 |
|
- | Schottky | 100V | 10A | 680mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
SCHOTTKY RECTIFIER PDI5 T&R 5K |
8.262 |
|
- | Schottky | 100V | 10A | 680mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 4A DPAK |
5.436 |
|
- | Standard | 600V | 4A | 2.1V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 100µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -65°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 4A DO201AD |
7.344 |
|
Automotive, AEC-Q101 | Standard | 500V | 4A | 1.7V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 500V | 80pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 4A DO201AD |
7.470 |
|
Automotive, AEC-Q101 | Standard | 600V | 4A | 1.7V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 80pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 6A DO201AD |
4.716 |
|
Automotive, AEC-Q101 | Standard | 50V | 6A | 975mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 50V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 6A DO201AD |
6.282 |
|
Automotive, AEC-Q101 | Standard | 100V | 6A | 975mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 100V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 8A DO201AD |
7.578 |
|
Automotive, AEC-Q101 | Schottky | 20V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 8A DO201AD |
4.680 |
|
Automotive, AEC-Q101 | Schottky | 30V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 8A DO201AD |
4.842 |
|
Automotive, AEC-Q101 | Schottky | 40V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 8A DO201AD |
6.012 |
|
- | Schottky | 50V | 8A | 700mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 200V 4A DPAK |
5.724 |
|
- | Standard | 200V | 4A | 1V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 100µA @ 200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -65°C ~ 175°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 50V 10A R-6 |
6.048 |
|
- | Standard | 50V | 10A | 1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | 150pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 50V 10A R-6 |
6.606 |
|
- | Standard | 50V | 10A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 50V | - | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 3A DO201AD |
3.654 |
|
- | Standard | 400V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 20µA @ 400V | - | Through Hole | DO-201AD, Axial | DO-201AD | -40°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 3A DO201AD |
3.474 |
|
- | Standard | 600V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 20µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 4A DO201AD |
6.732 |
|
- | Standard | 200V | 4A | 890mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 4A DO201AD |
7.920 |
|
- | Standard | 200V | 4A | 890mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 6A DO201AD |
4.158 |
|
- | Standard | 150V | 6A | 975mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 150V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 6A DO201AD |
3.366 |
|
- | Standard | 200V | 6A | 975mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 2A MFLAT |
4.572 |
|
- | Schottky | 60V | 2A | 580mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
|
|
|
SMC Diode Solutions |
DIODE SCHOTTKY 45V 20A ITO220AC |
7.308 |
|
- | Schottky | 45V | 20A | 650mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | 900pF @ 5V, 1MHz | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 650V DIE |
6.624 |
|
- | Standard | 650V | - | 1.3V @ 20A | - | - | 1µA @ 650V | - | Surface Mount | Die | Die | 175°C (Max) |
|
|
|
ON Semiconductor |
DIODE GEN PURP 200V 3A DPAK |
4.392 |
|
Automotive, AEC-Q101 | Standard | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 175°C |
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|
Sanken |
DIODE SCHOTTKY SMD |
3.294 |
|
- | Schottky | 40V | 2A | 550mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY SMD |
8.730 |
|
- | Schottky | 60V | 2A | 690mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY SMD |
6.930 |
|
- | Schottky | 90V | 2A | 850mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 90V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 200V 1A 2SMD |
8.658 |
|
- | Standard | 200V | 1A | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 25µA @ 200V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |