Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 488/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 3A DO214AA |
8.550 |
|
Automotive, AEC-Q101 | Standard | 400V | 3A | 1.13V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 41pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 3A DO214AA |
8.460 |
|
Automotive, AEC-Q101 | Standard | 500V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 500V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A DO214AA |
3.508 |
|
- | Standard | 200V | 2A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 200V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2A DO214AA |
7.650 |
|
- | Standard | 600V | 2A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
3.960 |
|
SUPERECTIFIER® | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 200V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
8.442 |
|
SUPERECTIFIER® | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 600V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
6.372 |
|
SUPERECTIFIER® | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 1000V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GPP 1A 100V DO-204AL |
3.204 |
|
Automotive, AEC-Q101 | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 100V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
7.218 |
|
Automotive, AEC-Q101, Superectifier® | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 200V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
2.466 |
|
Automotive, AEC-Q101, Superectifier® | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 400V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 500V 1A DO204AL |
3.870 |
|
Automotive, AEC-Q101, Superectifier® | Standard | 500V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 500V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
7.488 |
|
Automotive, AEC-Q101, Superectifier® | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 1000V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
2.100 |
|
Automotive, AEC-Q101 | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 400V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
5.760 |
|
Automotive, AEC-Q101 | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 1000V | 7pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 5A DO214AB |
2.484 |
|
- | Standard | 400V | 5A | - | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 80pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 5A DO214AB |
2.322 |
|
- | Standard | 600V | 5A | - | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Comchip Technology |
DIODE GEN PURP 200V 3A DO214AB |
8.118 |
|
- | Standard | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | 150°C (Max) |
|
|
|
Comchip Technology |
DIODE GEN PURP 400V 3A DO214AB |
7.200 |
|
- | Standard | 400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 400V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | 150°C (Max) |
|
|
|
Comchip Technology |
DIODE GEN PURP 600V 3A DO214AB |
5.634 |
|
- | Standard | 600V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 600V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | 150°C (Max) |
|
|
|
Comchip Technology |
DIODE GEN PURP 200V 3A DO214AB |
4.734 |
|
- | Standard | 200V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | 150°C (Max) |
|
|
|
Comchip Technology |
DIODE GEN PURP 400V 3A DO214AB |
5.580 |
|
- | Standard | 400V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | 150°C (Max) |
|
|
|
Comchip Technology |
DIODE GEN PURP 50V 3A DO214AB |
3.456 |
|
- | Standard | 50V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | 150°C (Max) |
|
|
|
Comchip Technology |
DIODE GEN PURP 100V 3A DO214AB |
4.446 |
|
- | Standard | 100V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | 150°C (Max) |
|
|
|
Comchip Technology |
DIODE GEN PURP 600V 3A DO214AB |
7.506 |
|
- | Standard | 600V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | 150°C (Max) |
|
|
|
Comchip Technology |
DIODE GEN PURP 800V 3A DO214AB |
3.618 |
|
- | Standard | 800V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 800V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | 150°C (Max) |
|
|
|
Sanken |
DIODE GEN PURP 400V 700MA AXIAL |
3.690 |
|
- | Standard | 400V | 700mA | 1.8V @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 100µA @ 400V | - | Through Hole | Axial | Axial | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 400V 800MA AXIAL |
7.578 |
|
- | Standard | 400V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 400V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 600V 500MA AXIAL |
4.374 |
|
- | Standard | 600V | 500mA | 2V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 100µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 400V 600MA AXIAL |
4.194 |
|
- | Standard | 400V | 600mA | 1.35V @ 600mA | Standard Recovery >500ns, > 200mA (Io) | 4µs | 10µA @ 400V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 1KV 1A AXIAL |
4.212 |
|
- | Standard | 1000V | 1A | 1.05V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 20µA @ 1000V | - | Through Hole | Axial | - | -40°C ~ 150°C |