Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 487/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1A DO220AA |
4.932 |
|
eSMP® | Avalanche | 600V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 1µA @ 600V | 12.5pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1A DO220AA |
3.942 |
|
eSMP® | Avalanche | 200V | 1A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 1µA @ 200V | 11pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1A DO220AA |
8.946 |
|
eSMP® | Avalanche | 400V | 1A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 1µA @ 400V | 11pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1A DO220AA |
4.698 |
|
eSMP® | Avalanche | 600V | 1A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 1µA @ 600V | 11pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 3A DO201AD |
7.830 |
|
- | Standard | 150V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 150V | 80pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2A DO214AA |
4.086 |
|
- | Standard | 600V | 2A | 1.6V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 600V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 5A DO201AD |
2.160 |
|
- | Schottky | 60V | 5A | 700mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 4A DO201AD |
8.802 |
|
- | Standard | 50V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 4A DO201AD |
5.328 |
|
- | Standard | 100V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 5µA @ 100V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 4A DO201AD |
3.024 |
|
- | Standard | 150V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 4A DO201AD |
4.680 |
|
- | Standard | 200V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 200V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 4A DO201AD |
2.232 |
|
- | Standard | 50V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 4A DO201AD |
7.398 |
|
- | Standard | 100V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 4A DO201AD |
8.334 |
|
- | Standard | 150V | 4A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 4A DO201AD |
5.652 |
|
- | Standard | 200V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 200V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 5A DO214AB |
5.508 |
|
- | Standard | 200V | 5A | - | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 200V | 80pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 5A DO214AB |
5.958 |
|
- | Standard | 300V | 5A | - | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | 80pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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Comchip Technology |
DIODE GEN PURP 1KV 5A DO214AB |
6.408 |
|
- | Standard | 1000V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | 150°C (Max) |
|
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 3A DO214AA |
3.042 |
|
- | Schottky | 100V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
SCHOTTKY RECTIFIER SMB |
2.790 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.5A |
7.884 |
|
- | Avalanche | 200V | 1.5A | 1.25V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 1µA @ 200V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.5A |
5.958 |
|
- | Avalanche | 400V | 1.5A | 1.25V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 1µA @ 400V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.5A |
6.606 |
|
- | Avalanche | 600V | 1.5A | 1.25V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 1µA @ 600V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 3A DO201AD |
7.200 |
|
- | Schottky | 50V | 3A | 680mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 800V 1A SMD |
4.896 |
|
- | Standard | 800V | 1A | 1.05V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 19µs | 5µA @ 800V | - | Surface Mount | 2-SMD, J-Lead | SMD | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 500V 1A SJP |
8.244 |
|
- | Standard | 500V | 1A | 1.4V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 10µA @ 500V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 100V 5A POWERDI 5 |
7.470 |
|
- | Schottky | 100V | 5A | 620mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 12A DO214AB |
6.030 |
|
- | Standard | 400V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 400V | 78pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 12A DO214AB |
2.430 |
|
- | Standard | 600V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 600V | 78pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 12A DO214AB |
8.298 |
|
- | Standard | 800V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 800V | 78pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |