Raddrizzatori - Singoli

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Tensione - Inversione CC (Vr) (Max)

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Corrente - Media Rettificata (Io)

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Tensione - Avanti (Vf) (Max) @ If

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Velocità

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Tempo di recupero inverso (trr)

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Corrente - Perdita inversa @ Vr

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Capacità @ Vr, F

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Tipo di montaggio

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Pacchetto / Custodia

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli

Record 34.936

Pagina 312/1165

Numero parte	Produttore	Descrizione	Disponibile	Serie	Tipo di diodo	Tensione - Inversione CC (Vr) (Max)	Corrente - Media Rettificata (Io)	Tensione - Avanti (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / Custodia	Pacchetto dispositivo fornitore	Temperatura di esercizio - Giunzione
1N4005B-G	Comchip Technology	DIODE GEN PURP 600V 1A DO41	6.192	-	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
1N4006B-G	Comchip Technology	DIODE GEN PURP 800V 1A DO41	6.372	-	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
1N4150W-HE3-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 200MA SOD123	7.812	-	Standard	50V	200mA	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 50V	2.5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
1N4151W-HE3-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 150MA SOD123	4.878	-	Standard	50V	150mA	1V @ 50mA	Small Signal =< 200mA (Io), Any Speed	4ns	50nA @ 50V	-	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
1N4448W-HE3-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 75V 150MA SOD123	8.352	Automotive, AEC-Q101	Standard	75V	150mA	720mV @ 5mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	-	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
1N4448WS-HE3-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 75V 150MA SOD323	2.376	-	Standard	75V	150mA	720mV @ 5mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	-	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 150°C
BAS16D-HE3-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 75V 250MA SOD123	6.642	Automotive, AEC-Q101	Standard	75V	250mA	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	6ns	1µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
1N4151W-HE3-08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 150MA SOD123	8.136	-	Standard	50V	150mA	1V @ 50mA	Small Signal =< 200mA (Io), Any Speed	4ns	50nA @ 50V	-	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
1T7G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A TS-1	7.542	-	Standard	-	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T3G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A TS-1	8.604	-	Standard	200V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T5G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	7.488	-	Standard	600V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T7G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A TS-1	5.904	-	Standard	-	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
BAS321/8F	Nexperia	DIODE GEN PURP 200V 250MA SOD323	8.424	-	Standard	200V	250mA (DC)	1.25V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 200V	2pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	150°C (Max)
S1GR2	Taiwan Semiconductor Corporation	1A, 400V, GLASS PASSIVATED SMD R	5.274	-	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 400V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
S1GR3	Taiwan Semiconductor Corporation	1A, 400V, GLASS PASSIVATED SMD R	7.218	-	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 400V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
S1JR2	Taiwan Semiconductor Corporation	1A, 600V, GLASS PASSIVATED SMD R	6.912	-	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 600V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
S1JR3	Taiwan Semiconductor Corporation	1A, 600V, GLASS PASSIVATED SMD R	5.670	-	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 600V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
SB120TA	SMC Diode Solutions	DIODE SCHOTTKY 20V 1A DO41	6.426	-	Schottky	20V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	110pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 125°C
SB130TA	SMC Diode Solutions	DIODE SCHOTTKY 30V 1A DO41	5.634	-	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	110pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 125°C
SB150TA	SMC Diode Solutions	DIODE SCHOTTKY 50V 1A DO41	3.618	-	Schottky	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	80pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 125°C
BAS19 RFG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 200MA SOT23	4.050	-	Standard	100V	200mA	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 100V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-65°C ~ 150°C
BAS20 RFG	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 200MA SOT23	5.310	-	Standard	150V	200mA	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 150V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-65°C ~ 150°C
BAS116LYL	Nexperia	DIODE GEN PURP 75V 325MA 2DFN	2.484	Automotive, AEC-Q101	Standard	75V	325mA (DC)	1.25V @ 150mA	Standard Recovery >500ns, > 200mA (Io)	3µs	5nA @ 75V	2pF @ 0V, 1MHz	Surface Mount	SOD-882	DFN1006-2	150°C (Max)
1SS400-G	Comchip Technology	DIODE GEN PURP 80V 100MA SOD523	7.146	-	Standard	80V	100mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 80V	3pF @ 0.5V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	125°C (Max)
BAS21 RFG	Taiwan Semiconductor Corporation	DIODE GEN PURP 250V 200MA SOT23	5.796	-	Standard	250V	200mA	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 200V	5pF @ 1V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-55°C ~ 150°C
MMBD4448HW-7-F	Diodes Incorporated	DIODE GEN PURP 80V 250MA SOT323	4.302	-	Standard	80V	250mA	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 70V	3.5pF @ 6V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	-65°C ~ 150°C
CDSFR101A	Comchip Technology	DIODE GEN PURP 80V 100MA 1005	2.322	-	Standard	80V	100mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	50nA @ 75V	3pF @ 0.5V, 1MHz	Surface Mount	1005 (2512 Metric)	1005/SOD-323F	125°C (Max)
CDSFR4448	Comchip Technology	DIODE GEN PURP 80V 125MA 1005	8.100	-	Standard	80V	125mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	9ns	100nA @ 80V	9pF @ 0.5V, 1MHz	Surface Mount	1005 (2512 Metric)	1005/SOD-323F	125°C (Max)
CDSUR400	Comchip Technology	DIODE GEN PURP 80V 100MA 0603	3.598	-	Standard	80V	100mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 80V	3pF @ 0.5V, 1MHz	Surface Mount	2-SMD, No Lead	0603/SOD-523F	125°C (Max)
CUS521,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 200MA USC	6.318	-	Schottky	30V	200mA	500mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	30µA @ 30V	26pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	125°C (Max)

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