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Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 126/1165
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
ES2CA R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 2A DO214AC
19.764
-
Standard
150V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
25pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
RB162LAM-60TR
Rohm Semiconductor
DIODE SCHOTTKY 60V 1A PMDTM
44.016
-
Schottky
60V
1A
650mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 60V
-
Surface Mount
SOD-128
PMDTM
150°C (Max)
RGL41K-E3/96
Vishay Semiconductor Diodes Division
DIODE GEN PURP 800V 1A DO213AB
37.236
SUPERECTIFIER®
Standard
800V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
15pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
ES2DAHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO214AC
17.934
-
Standard
200V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
25pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES2FAHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 2A DO214AC
16.878
-
Standard
300V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
20pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
S2B R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 2A DO214AA
62.826
-
Standard
100V
2A
1.15V @ 2A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
1µA @ 100V
30pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S2G R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 2A DO214AA
46.866
-
Standard
400V
2A
1.15V @ 2A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
1µA @ 400V
30pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
CMUSH2-4 TR
Central Semiconductor Corp
DIODE SCHOTTKY 40V 200MA SOT523
27.504
-
Schottky
40V
200mA
750mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 25V
10pF @ 1V, 1MHz
Surface Mount
SC-89, SOT-490
SOT-523
-65°C ~ 150°C
AR1PG-M3/84A
Vishay Semiconductor Diodes Division
DIODE AVALANCHE 400V 1A DO220AA
70.866
eSMP®
Avalanche
400V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
140ns
1µA @ 400V
12.5pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
AR1PJ-M3/84A
Vishay Semiconductor Diodes Division
DIODE AVALANCHE 600V 1A DO220AA
44.826
eSMP®
Avalanche
600V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
140ns
1µA @ 600V
12.5pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
PMEG4020EPASX
Nexperia
DIODE SCHOTTKY 40V 2A SOT1061
24.000
Automotive, AEC-Q101
Schottky
40V
2A
535mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
6ns
100µA @ 40V
270pF @ 1V, 1MHz
Surface Mount
3-UDFN Exposed Pad
DFN2020D-3
150°C (Max)
RS2K R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 2A DO214AA
53.730
-
Standard
800V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
50pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
CDBB360-HF
Comchip Technology
DIODE SCHOTTKY 60V 3A DO214AA
22.626
-
Schottky
60V
3A
700mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
250pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-50°C ~ 150°C
S2K-E3/52T
Vishay Semiconductor Diodes Division
DIODE GEN PURP 800V 1.5A DO214AA
25.230
-
Standard
800V
1.5A
1.15V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 800V
16pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
A1N5404G-G
Comchip Technology
DIODE GEN PURP 400V 3A DO27
13.698
Automotive, AEC-Q101
Standard
400V
3A
1.1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
50pF @ 4V, 1MHz
Through Hole
DO-201AA, DO-27, Axial
DO-27
-55°C ~ 150°C
BYM07-300-E3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 300V 500MA DO213
52.698
SUPERECTIFIER®
Standard
300V
500mA
1.35V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 300V
7pF @ 4V, 1MHz
Surface Mount
DO-213AA (Glass)
DO-213AA (GL34)
-65°C ~ 175°C
AU1PD-M3/84A
Vishay Semiconductor Diodes Division
DIODE AVALANCHE 200V 1A DO220AA
46.446
eSMP®
Avalanche
200V
1A
1.5V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
1µA @ 200V
11pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
AU1PG-M3/84A
Vishay Semiconductor Diodes Division
DIODE AVALANCHE 400V 1A DO220AA
25.770
eSMP®
Avalanche
400V
1A
1.5V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
1µA @ 400V
11pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
1N4936 TR
Central Semiconductor Corp
DIODE GEN PURP 400V 1A DO41
38.022
-
Standard
400V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 400V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 200°C
RB451FT106
Rohm Semiconductor
DIODE SCHOTTKY 40V 100MA UMD3
22.662
-
Schottky
40V
100mA
550mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
30µA @ 10V
6pF @ 10V, 1MHz
Surface Mount
SC-70, SOT-323
UMD3
125°C (Max)
SS22 R5G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 2A DO214AA
44.244
-
Schottky
20V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 20V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 125°C
SS26 R5G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 2A DO214AA
37.104
-
Schottky
60V
2A
700mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 60V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S3MBHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 3A DO214AA
57.198
-
Standard
1000V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 1000V
40pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S3AB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AA
33.282
-
Standard
50V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 50V
40pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S3JBHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AA
37.260
-
Standard
600V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 600V
40pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SDURD560ATR
SMC Diode Solutions
DIODE GEN PURP 600V DPAK
257.556
-
Standard
600V
-
1.7V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-55°C ~ 150°C
CDBC360-HF
Comchip Technology
DIODE SCHOTTKY 60V 3A DO214AB
27.246
-
Schottky
60V
3A
700mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
250pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-50°C ~ 150°C
S3M R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 3A DO214AB
25.236
-
Standard
1000V
3A
1.15V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 1000V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
UG2D A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO204AC
12.408
-
Standard
200V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 200V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
SDURD540TR
SMC Diode Solutions
DIODE GEN PURP 300V DPAK
26.856
-
Standard
300V
-
1.3V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
30µA @ 300V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-55°C ~ 150°C