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Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 1054/1165
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
SS26LHM2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 2A SUB SMA
3.418
Automotive, AEC-Q101
Schottky
60V
2A
700mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 60V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS26LHMHG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 2A SUB SMA
3.204
Automotive, AEC-Q101
Schottky
60V
2A
700mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 60V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS29L M2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 2A SUB SMA
3.906
-
Schottky
90V
2A
850mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS29L MHG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 2A SUB SMA
5.508
-
Schottky
90V
2A
850mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS29LHM2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 2A SUB SMA
3.042
Automotive, AEC-Q101
Schottky
90V
2A
850mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS29LHMHG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 2A SUB SMA
2.736
Automotive, AEC-Q101
Schottky
90V
2A
850mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS310L M2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 3A SUB SMA
8.226
-
Schottky
100V
3A
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS310L MHG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 3A SUB SMA
3.960
-
Schottky
100V
3A
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS310LHMHG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 3A SUB SMA
4.032
Automotive, AEC-Q101
Schottky
100V
3A
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS34L M2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 3A SUB SMA
7.362
-
Schottky
40V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 125°C
SS34L MHG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 3A SUB SMA
6.048
-
Schottky
40V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 125°C
SS34LHM2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 3A SUB SMA
7.470
Automotive, AEC-Q101
Schottky
40V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 125°C
SS34LHMHG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 3A SUB SMA
8.496
Automotive, AEC-Q101
Schottky
40V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 125°C
SS36L M2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 3A SUB SMA
5.850
-
Schottky
60V
3A
750mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS36L MHG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 3A SUB SMA
8.964
-
Schottky
60V
3A
750mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS36LHMHG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 3A SUB SMA
7.758
Automotive, AEC-Q101
Schottky
60V
3A
750mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
TSSA5U50 M2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 5A DO214AC
6.246
-
Schottky
50V
5A
540mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 50V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
TSSA5U60 M2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 5A DO214AC
8.010
-
Schottky
60V
5A
560mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 60V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
UG2JAHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO214AC
7.902
Automotive, AEC-Q101
Standard
600V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
55ns
2µA @ 600V
20pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES3A M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
6.966
-
Standard
50V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3AHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
7.848
Automotive, AEC-Q101
Standard
50V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3B M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
5.904
-
Standard
100V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3BHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
7.380
Automotive, AEC-Q101
Standard
100V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3C M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 3A DO214AB
5.616
-
Standard
150V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3CHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 3A DO214AB
8.460
Automotive, AEC-Q101
Standard
150V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3D M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
8.352
-
Standard
200V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3F M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 3A DO214AB
2.484
-
Standard
300V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3FHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 3A DO214AB
4.428
Automotive, AEC-Q101
Standard
300V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3GHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AB
5.562
Automotive, AEC-Q101
Standard
400V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3HM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 3A DO214AB
7.002
Automotive, AEC-Q101
Standard
500V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C