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Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 1051/1165
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
RSFGLHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 500MA SUBSMA
5.832
Automotive, AEC-Q101
Standard
400V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFGLHMHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 500MA SUBSMA
7.614
Automotive, AEC-Q101
Standard
400V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFJL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 500MA SUBSMA
6.318
-
Standard
600V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFJLHMHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 500MA SUBSMA
8.622
Automotive, AEC-Q101
Standard
600V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFKL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 500MA SUBSMA
5.940
-
Standard
800V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFKL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 500MA SUBSMA
2.556
-
Standard
800V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFKLHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 500MA SUBSMA
4.338
Automotive, AEC-Q101
Standard
800V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFML MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 500MA SUB SMA
2.232
-
Standard
-
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFMLHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500MA SUB SMA
7.578
Automotive, AEC-Q101
Standard
-
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFMLHMHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 500MA SUB SMA
5.526
Automotive, AEC-Q101
Standard
-
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
S1AL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
4.752
-
Standard
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 50V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1AL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
8.082
-
Standard
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 50V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1ALHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
7.182
Automotive, AEC-Q101
Standard
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 50V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1ALHMHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
4.752
Automotive, AEC-Q101
Standard
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 50V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1BL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
4.554
-
Standard
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 100V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1BL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
2.592
-
Standard
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 100V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1BLHMHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
5.148
Automotive, AEC-Q101
Standard
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 100V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1DL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
3.780
-
Standard
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 200V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1DL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
8.892
-
Standard
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 200V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1DLHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
3.456
Automotive, AEC-Q101
Standard
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 200V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1DLHMHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
6.534
Automotive, AEC-Q101
Standard
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 200V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1GL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SUB SMA
8.496
-
Standard
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 400V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1GL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SUB SMA
8.334
-
Standard
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 400V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1GLHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SUB SMA
7.002
Automotive, AEC-Q101
Standard
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 400V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1GLHMHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SUB SMA
7.758
Automotive, AEC-Q101
Standard
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 400V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1JL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
8.892
-
Standard
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 600V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1JLHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
7.956
Automotive, AEC-Q101
Standard
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 600V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1JLHMHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
6.966
Automotive, AEC-Q101
Standard
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 600V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1KL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A SUB SMA
7.902
-
Standard
800V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 800V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1KL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A SUB SMA
4.356
-
Standard
800V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 800V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C