Raddrizzatori - Singoli

Produttore

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Serie

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Tipo di diodo

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Tensione - Inversione CC (Vr) (Max)

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Corrente - Media Rettificata (Io)

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Tensione - Avanti (Vf) (Max) @ If

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Velocità

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Tempo di recupero inverso (trr)

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Corrente - Perdita inversa @ Vr

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Capacità @ Vr, F

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Tipo di montaggio

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Pacchetto / Custodia

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Pacchetto dispositivo fornitore

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Temperatura di esercizio - Giunzione

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli

Record 34.936

Pagina 1045/1165

Numero parte	Produttore	Descrizione	Disponibile	Serie	Tipo di diodo	Tensione - Inversione CC (Vr) (Max)	Corrente - Media Rettificata (Io)	Tensione - Avanti (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / Custodia	Pacchetto dispositivo fornitore	Temperatura di esercizio - Giunzione
UF4007 R1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	6.498	-	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4007HR1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	5.724	Automotive, AEC-Q101	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
ES1AL RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	4.392	-	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	10pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1ALHRHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	4.428	Automotive, AEC-Q101	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1BL RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	4.014	-	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	10pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1BLHRHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	6.588	Automotive, AEC-Q101	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1CL RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A SUB SMA	2.286	-	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	10pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1CLHRHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A SUB SMA	2.556	Automotive, AEC-Q101	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1DL RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	7.470	-	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	10pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1DLHRHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	3.508	Automotive, AEC-Q101	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1FL RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A SUB SMA	5.868	-	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1FLHRHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A SUB SMA	4.446	Automotive, AEC-Q101	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1GL RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	4.608	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1GLHRHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	3.870	Automotive, AEC-Q101	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1HL RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A SUB SMA	5.346	-	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1JL RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	8.784	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1AL RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	4.446	-	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1BL RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	8.406	-	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1DL RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	4.950	-	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1FL RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A SUB SMA	8.226	-	Standard	300V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1GL RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	6.696	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1JL RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	6.696	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1KL RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A SUB SMA	2.808	-	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1ML RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A SUB SMA	5.652	-	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1AL RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 800MA SUB SMA	8.370	-	Standard	50V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1ALHRHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 800MA SUB SMA	7.974	Automotive, AEC-Q101	Standard	50V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1BL RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 800MA SUBSMA	5.958	-	Standard	100V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1BLHRHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 800MA SUBSMA	8.928	Automotive, AEC-Q101	Standard	100V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1DL RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 800MA SUBSMA	3.132	-	Standard	200V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1DLHRHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 800MA SUBSMA	4.356	Automotive, AEC-Q101	Standard	200V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C

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